A pre-polymer formulation comprising quantum dots and a precursor for a polymer having a free volume parameter V.sub.FH2/γ with a value less than or equal to 0.03 cm.sup.3/g is disclosed. A pre-polymer formulation comprising quantum dots and a cyclohexylacrylate monomer is further disclosed. Also disclosed are a quantum dot composition including quantum dots dispersed in a polymer matrix, the quantum dot composition being prepared from a pre-polymer formulation comprising quantum dots and a precursor for a polymer having a free volume parameter V.sub.FH2/γ with a value less than or equal to cm.sup.3/g; a method; and other products including a quantum dot composition described herein.

Provided are core-shell particles that have high luminous efficiency and are useful as quantum dots, a method for producing the same, and a film produced using the core-shell particles. The core-shell particles of the invention are core-shell particles having a core containing a Group III element and a Group V element; and a shell covering at least a portion of the surface of the core and containing a Group II element and a Group VI element, in which the proportion of the peak intensity ratio of the Group II element with respect to the peak intensity ratio of the Group III element as measured by X-ray photoelectron spectroscopy analysis is 0.25 or higher.

The invention relates to a self-passivating quantum dot and a preparation method thereof. The quantum dot is doped with a self-passivating element M and the self-passivating element M ranges from 0.1 wt % to 40 wt % in content. The self-passivating element is selected from the group consisting of Al, Zr, Fe, Ti, Cr, Ta, Si, and Ni. The preparation method comprises the steps of: adding a quantum dot core and a solvent into a reaction vessel, controlling the temperature to be 100-120 DEG C. and vacuumizing the reaction vessel for 30-50 min; filling the reaction vessel with inert gas, and rising the temperature to 230-280 DEG C.; and injecting a coating material precursor solution into the reaction vessel for coating the quantum dot core according to the injection amount being 1 or 2 times by molar concentration of the quantum dot core element per hour to prepare the self-passivating quantum dot. The self-passivating element M is doped with the quantum dot core precursor solution in the form of an M precursor, or is doped with the coating material precursor solution. Compared with the prior art, the self-passivating quantum dot has better appearance and is significantly improved in photostability.

Methods, structures, devices and systems are disclosed for fabricating and implementing nanoparticles with hollow core and sealable holes. In one aspect, a nanoparticle device can includes a shell structure including at least two layers including an internal layer and an external layer, the internal layer structured to enclose a hollow interior region and include one or more holes penetrating the internal layer, the external layer is of a porous material and formed around the internal layer and sealing the one or more holes, and a substance contained within the hollow interior region, the substance incapable of passing through the external layer.

A photosensitive resin composition according to an example embodiment of the present disclosure includes a quantum dot, a photopolymerizable compound, a photopolymerization initiator, an alkali-soluble resin, and a solvent, wherein the alkali-soluble resin includes at least one of a monomer represented by Formula 1 and a monomer represented by Formula 2:

##STR00001##

A manufacturing method of carbon nanofibers at a high activity is provided. Further, carbon nanofibers produced by the manufacturing method and being excellent in electric conductivity, crystallinity and dispersibility is provided. By a manufacturing method of carbon nanofibers in which an active species including cobalt as a chief component is employed as a catalyst and carbon monoxide is used as a carbon source, wherein said catalyst has 3 to 150 mass % of said active species carried on a carrier composed of a magnesium-containing oxide having a specific surface area of 0.01 to 5 m.sup.2/g, and a reaction temperature, partial pressure of carbon monoxide and a flow rate of raw material gas is controlled, CNFs that are excellent in electric conductivity, crystallinity and dispersibility can be manufactured at high activity, so that carbon nanofibers that is excellent in electric conductivity, crystallinity and dispersibility is obtained.

This disclosure relates to a glucose-sensing electrode including a nanoporous metal layer and a maltose-blocking layer formed over the nanoporous metal layer. The nanoporous metal layer is capable of oxidizing both glucose and maltose without an enzyme specific to glucose or maltose in the glucose-sensing electrode. The maltose-blocking layer has porosity that permits glucose to pass therethrough and inhibits maltose from passing therethrough toward the nanoporous metal layer.

The invention relates to a method for the synthesis of glutathione-capped cadmium-telluride (GSH-CdTe) quantum dots in an aqueous medium, including the steps of: a) preparing a precursor solution of cadmium in a citrate buffer; b) adding glutathione (GSH) to the preceding mixture via strong agitation; c) adding a telluride (potassium or sodium telluride) oxyanion as a telluride donor to the preceding mixture; d) allowing the preceding mixture to react; and e) stopping the reaction by incubation at low temperature.

The present invention provides a method for fabricating core-shell particles supported on a carrier, the method including: forming a solution by adding a first metal supported on a carrier to a solvent; adjusting a pH of the solution from 7 to 14 and adding a metal salt of a second metal thereto; and forming core-shell particles by adding a reducing agent to the solution and forming a shell including the second metal on a surface of a core particle including the first metal, and core-shell particles fabricated by the method.

Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.