A method for producing mesoporous platinum nanoparticles without using templating agents is provided. The method involves preparing a solution comprising water, platinum nanoparticle seeds, a platinum salt and a reducing agent, and heating the solution to a temperature between 150° C. and 250° C. at a rate of between 1° C./min and 15° C./min under a pressure of between 5 and 20 atm. The method allows obtaining mesoporous platinum nanoparticles having controlled shape and controlled pore dimensions. The mesoporous platinum nanoparticles are useful as catalysts in chemical precision reactions and for the production of artificial enzymes for diagnostics and nanomedicine applications.

This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.

A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.

This application features a method of forming a nanoporous layer. The method includes steps of dispensing on a substrate a colloid composition comprising a liquid and a number of nanoparticle clusters, and subjecting the dispensed colloid composition to drying to form the nanoporous layer over the substrate. The nanoporous layer includes nanoparticles deposited to form a three dimensional network of irregularly shaped bodies. The nanoporous layer also includes a three dimensional network of irregularly shaped spaces that are not occupied by the three dimensional network of irregularly shaped bodies.

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

Systems, methods, and devices are disclosed for producing quantum particles (e.g., quantum dots) having a uniform size by vaporization of molten precursor droplets. More particularly, the present technology produces quantum dots by melting or liquefying solid and substantially pure precursor materials followed by production of uniformly sized droplets of molten precursor by use of a droplet maker into a microwave generated plasma torch.

A quantum dot including a first ligand and a second ligand on a surface of the quantum dot, a composition or composite including the same, and a device including the same. The first ligand includes a compound represented by Chemical Formula 1 and the second ligand includes a compound represented by Chemical Formula 2:
MA.sub.n  Chemical Formula 1 wherein M, n, and A are the same as defined in the specification; and ##STR00001## wherein, R.sup.1, L.sub.1, Y.sub.1, R, k1, and k2 are the same as defined in the specification.

A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M.sup.1, M.sup.2, and Z. M.sup.1 is at least one element selected from the group consisting of Ag, Cu, and Au. M.sup.2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

A method and a system for producing a change in a medium. The method places in a vicinity of the medium at least one energy modulation agent. The method applies an initiation energy to the medium. The initiation energy interacts with the energy modulation agent to directly or indirectly produce the change in the medium. The system includes an initiation energy source configured to apply an initiation energy to the medium to activate the energy modulation agent.

A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M.sup.1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M.sup.1, an element M.sup.2, optionally an element M.sup.3, and an element Z, and have an average particle size of 50 nm or less. The element M.sup.1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M.sup.2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M.sup.3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.