An overcoating inorganic quantum dot and a method for preparing the same are provided. The overcoating inorganic quantum dot includes at least one perovskite quantum dot with an oxide overcoat. The method includes forming the perovskite quantum dots, and overcoating an oxide overcoat on the perovskite quantum dots.

Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

A process for producing a light emitting diode device, the process including: forming a plurality of quantum dots on a surface of a layer including a first area and a second area, the forming including: exposing the first area of the surface to light having a first wavelength while exposing the first area to a quantum dot forming environment that causes the quantum dots in the first area to form at a first growth rate while the quantum dots have a dimension less than a first threshold dimension; exposing the second area of the surface to light having a second wavelength while exposing the second area to the quantum dot forming environment that causes the quantum dots in the second area to form at a third growth rate while the quantum dots have a dimension less than a second threshold dimension; and processing the layer to form the LED device.

The present invention provides polymer composites, such as films, having dispersed therein quantum dots, wherein the polymer comprises (b) polymerized units of a first compound comprising from one to 6 thiol groups, the compound having a molecular weight from 300 to 20,000 and having at least one continuous acyclic hydrocarbyl chain of at least three carbon atoms, or, preferably, at least 5 carbon atoms; and (c) polymerized units of a second compound having a molecular weight from 100 to 750 and comprising at least two polymerizable vinyl groups as part of a (meth)acrylate ester group or attached directly to an aromatic ring and, wherein the molecular weight of the first compound minus the molecular weight of the second compound is at least 100. The polymer composites provide more stably dispersed and durable quantum dot compositions for use in, for example, display devices.

Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Provided is a preparation method of copper nanostructures, characterized in that a copper precursor including halide is reacted with polyethyleneimine (PEI) and a reducing agent in an aqueous solution. According to this method, the copper nanostructures may be easily prepared in a sphere, wire, or plate form, and high-quality copper nanostructures may be produced with a high production yield of 90% or more. This method is also appropriate for large-scale production.

A quantum dot includes a seed and a core enclosing the seed. The core is grown from the seed to improve size uniformity of the core. The seed includes a first compound without Cd. The first compound may be GaP. The core may include a second compound including elements from group XIII and group XV. The second compound may be InP. The quantum dot may also include a first shell of a third compound enclosing the core. The third compound may be ZnSe or ZnS. The quantum dot may also include a second shell of a fourth compound enclosing the first shell. The fourth compound may be ZnS when the third compound is ZnSe. Embodiments also relate to a quantum dot including first to third elements selected from XIII group elements and XV group elements and fourth to sixth elements selected from XII group elements and XVI group elements.

A color mirror substrate may include a transparent substrate, a plurality of wavelength conversion patterns arranged on the transparent substrate, and a plurality of mirror patterns, ones of the mirror patterns stacked on respective ones of the wavelength conversion patterns. Each wavelength conversion pattern may include a wavelength conversion particle with a quantum dot. In the color mirror display device, a mirror property having a desired color may be implemented. For example, a gold mirror or a black mirror may be implemented by using various types of quantum dots.

A process for producing a light emitting diode device, the process including: forming a plurality of quantum dots on a surface of a layer including a first area and a second area; exposing the first area of the surface to light having a first wavelength while exposing the first area to a first etchant that causes the quantum dots in the first area to be etched at a first etch rate while the quantum dots have a dimension at or greater than a first threshold dimension; exposing the second area of the surface to light having a second wavelength while exposing the second area to a second etchant that causes the quantum dots in the second area to be etched at a third etch rate while the quantum dots have a dimension at or greater than a second threshold dimension; and processing the etched layer to form the LED device.

Disclosed is a redox-complementary electrochromic device exhibiting black-to-transmissive switching, wherein the device comprises an electrochromic layer and a redox-active material layer sandwiched between a transparent first electrode and a transparent secondary electrode, the electrochromic layer comprising an electrochromic Co-based metallo-supramolecular polymer represented by the formula (I), and the redox active material being capable of reacting with the electrochromic material to change the electrochromic material from black state into colorless transmissive state, ##STR00001##
where in the formula (I), X represents a counter anion, R represents a single bond or a spacer comprising a carbon atom and a hydrogen atom, each of R.sup.1 to R.sup.4 independently represents a hydrogen atom or a substituent group, and n represents an integer of from 2 to 5000, which indicates a degree of polymerization.