Patent classifications
Y10T29/49082
CHIP RESISTOR AND METHOD FOR MAKING THE SAME
A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.
Resistor and method for making same
A metal strip resistor is provided. The metal strip resistor includes a metal strip forming a resistive element and providing support for the metal strip resistor without use of a separate substrate. There are first and second opposite terminations overlaying the metal strip. There is plating on each of the first and second opposite terminations. There is also an insulating material overlaying the metal strip between the first and second opposite terminations. A method for forming a metal strip resistor wherein a metal strip provides support for the metal strip resistor without use of a separate substrate is provided. The method includes coating an insulative material to the metal strip, applying a lithographic process to form a conductive pattern overlaying the resistive material wherein the conductive pattern includes first and second opposite terminations, electroplating the conductive pattern, and adjusting resistance of the metal strip.
U-shaped vertical shunt resistor for Power Semiconductor module
A measurement resistor for current measurement is described. According to one exemplary embodiment, the measurement resistor includes a first and a second metal layer, an electrically insulating interlayer and a resistive layer. The first metal layer is arranged in a first plane. The second metal layer is arranged in a second plane that is essentially parallel to the first plane and separated from the first plane. The electrically insulating interlayer is arranged between the first and second metal layers and mechanically connects the first and second metal layers to one another. The resistive layer electrically connects the first and second metal layers to one another.
Chip resistor and method for making the same
A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.
Chip resistor, method of producing chip resisitor and chip resistor packaging structure
[Object] A method for efficiently manufacturing chip resistors is provided. [Means] The method includes the steps of preparing at least three conductive elongated boards 711 made of an electrically conductive material and a resistive member 702 made of a resistive material, arranging the at least three conductive elongated boards 711 apart from each other along a width direction crossing a longitudinal direction in which one of the at least three conductive elongated boards 711 is elongated, forming a resistor aggregate 703 by bonding the resistive member 702 to the at least three conductive elongated boards 711, and collectively dividing the resistor aggregate 703 into a plurality of chip resistors by punching so that each of the chip resistors includes two electrodes and a resistor portion bonded to the two electrodes.
CHIP RESISTOR AND METHOD FOR MAKING THE SAME
A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.
Resistor with temperature coefficient of resistance (TCR) compensation
A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals.
Chip resistor and method for making the same
A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.
Voltage nonlinear resistive element and method for manufacturing the same
A voltage nonlinear resistive element includes a resistor containing a joined body in which a zinc oxide ceramic layer composed mainly of zinc oxide and having a volume resistivity of 1.010.sup.1 cm or less is joined to a bismuth oxide layer composed mainly of bismuth oxide, and a pair of electrodes disposed on the resistor such that an electrically conductive path passes through a joint surface between the zinc oxide ceramic layer and the bismuth oxide layer. In this element, the zinc oxide ceramic layer of the joined body has a lower volume resistivity than before. This can result in a lower clamping voltage in a high-current region than before.
Voltage nonlinear resistive element and method for manufacturing the same
The voltage nonlinear resistive element includes a resistor containing a joined body in which a zinc oxide ceramic layer composed mainly of zinc oxide and having a volume resistivity of less than 1.010.sup.2 cm is joined to a rare-earth metal oxide layer composed mainly of a rare-earth metal oxide, and a pair of electrodes disposed on the resistor such that an electrically conductive path passes through a junction between the zinc oxide ceramic layer and the rare-earth metal oxide layer. In this element, the zinc oxide ceramic layer of the joined body has a lower volume resistivity than before. This can result in a lower clamping voltage in a high electric current region than before.