A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

A reed for a reed switch and a reed switch are provided. The reed may include a first portion having a first thickness and a first length, a second portion having a second thickness and a second length, and a hinged portion disposed between the first portion and the second portion, the hinged portion having a third thickness and a third length, wherein the third length is less than 150% of the first thickness and the third thickness is less than each of the first thickness and the second thickness. The reed switch may include the reed disposed in an insulating housing with a reed deformer to deform the reed.

A method of assembling a switching module may arrange a first pressing member on a first supporting member, stack a plurality of switches and a plurality of cooling plates on the first pressing member along a vertical direction, arrange a second pressing member and a supporting member on the uppermost cooling plate, support the first supporting member and a second supporting member using a plurality of supporting rods, press the first pressing member using a pressing device to separate between the first pressing member and the first supporting member, and insert a third pressing member between the first pressing member and the first supporting member.

A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE.sub.1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE.sub.2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

A touch screen panel includes first and second sense cells on a same layer and coupling patterns that couple adjacent ones of the first sense cells and adjacent ones of the second sense cells to each other, respectively. The coupling patterns do not cross with each other, thereby improving the ability of the coupling patterns to withstand static electricity. A dummy line formed of a same material as the sense cells may be formed between the first and second sense cells, and the dummy line is electrically coupled to a guard ring located in an area outside of a display area of the touch screen panel, making it possible to overcome the effects of static electricity applied to the front surface of the touch screen panel as well as the side surface thereof.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Techniques and devices provide backlighting for keys of a keyboard or keypad.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Methods are described to create a reduced stiffness microstructure (RSM). A RSM is made by forming a first buckled membrane along a first buckling direction and forming a second buckled membrane along a second buckling direction. The second buckling direction is opposite to the first buckling direction and the first buckled membrane is in contact with the second buckled membrane over a contact area. Within an operating zone, a stiffness of the reduced stiffness microstructure during contact is less than an absolute value of a stiffness of at least one of the first buckled membrane, before contact, and the second buckled membrane, before contact, when the contact area translates along either one of the first buckling direction and the second buckling direction. In the operating zone the stiffness can approach or equal zero.