A system is disclosed, which comprises a component carrier having a first side, and a second side opposite the first side; and a light source to couple light into the carrier. In an example, the carrier is to propagate, through internal reflection, at least a portion the light to both the first and second sides of the carrier. The portion of light may be sufficient to release a first component and second component affixed to the first and second sides of the carrier via a first photosensitive layer and second photosensitive layer, respectively.

Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.

According to one embodiment, a chip transfer member includes a light-transmitting portion and a metal portion. The light-transmitting portion has a light incident surface, a light-emitting surface, and a side surface. The metal portion is provided at the side surface of the light-transmitting portion.

A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of the substrate, the first release layer being absorptive of light having a first wavelength for being decomposed by the light; an adhesive layer overlying the first release layer, and a second release layer overlying the adhesive layer. The second release layer is absorptive of light having a second wavelength for being decomposed by the light having the second wavelength. The bonded structure further contains a handle substrate that overlies the second release layer, where the handle substrate is substantially transparent to the light having the first wavelength and the second wavelength. Also disclosed is a debonding method to process the bonded structure to remove and reclaim the adhesive layer for re-use. In another embodiment a multi-step method optically cuts and debonds a bonded structure.

Touchscreen computing devices are often assembled by applying an adhesive to an interface perimeter between a cover glass and a chassis. Occasionally, a device is de-bonded to troubleshoot errors in the functionality of the device. The adhesive often is resistant to releasing the bond between the cover glass and a chassis by mechanical force and the cover glass may be damaged during disassembly. Passive and/or active de-bonding aids facilitate transfer of thermal energy to the adhesive in a manner that avoids or minimizes the transfer of thermal energy to heat-sensitive components of the device.

The present invention configures an image removing device capable of certainly and cleanly removing an image comprising an image forming substance and formed on the surface of a plastic recording material. An image removing device is provided with a means 2 for applying an ultraviolet curable resin and a means 4 for emitting ultraviolet light above a conveyance path for a recording material 1 on the surface of which an image is formed, and removes the image from the surface of the recording material 1 by transferring an image forming substance 1a to the ultraviolet curable resin and attaching the image forming substance, together with the ultraviolet curable resin, to the surface of a release body 5 by irradiating the ultraviolet light.

An equipment system for bond-packaging an LED using an organic silicone resin photoconverter by tandem rolling includes a protective film removing apparatus used for removing a protective film on one side of a photoconversion sheet with protective films on both sides and a roll-bonding apparatus for packaging a flip chip LED array by using the photoconversion sheet containing a protective film on a single side, to form LED package elements. The protective film removing apparatus includes a photoconversion sheet freezing part (2-1, 2-2), a traction part for pulling and removing a protective film on a single side of the frozen photoconversion sheet, and a photoconversion sheet rewarming part (4-1, 4-2) that are sequentially connected and disposed. The roll-bonding apparatus includes two single-wheeled rollers (5-1, 5-2) whose rolling surfaces are both smooth surfaces. The present invention has a significant advantage of bond-packaging an LED by using a continuous rolling process, and can satisfy a requirement of a process for bond-package an LED using an organic silicone resin photoconverter, thereby improving the production efficiency and yield of LED packages in industrialized batch production.

The present invention relates to a process for detaching a component from an electronic assembly. In particular, the present invention relates to a process for detaching a component bonded with a liquid optically clear adhesive (LOCA) in a display module by using electromagnetic radiation (EMR).

A peeling apparatus includes an ingot holding unit holding an ingot in a hanging state where a portion of the ingot to be peeled off as the wafer is directed downwardly, a water container containing water therein, an ultrasonic unit immersed in the water in the water container, a moving unit moving the ingot holding unit vertically into a position where the ingot holding unit faces the ultrasonic unit and at least the portion of the ingot to be peeled off as the wafer is immersed in the water in the water container, and a nozzle ejecting water to the portion of the ingot to be peeled off as the wafer thereby to promote the peeling of the wafer from the ingot.

Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.