Structures and methods are provided for temporarily bonding handler wafers to device wafers using bonding structures that include one or more releasable layers which are laser-ablatable using mid-wavelength infrared radiation.

According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (210). The first portion (110) includes a plurality of OLED devices (1000) which are in contact with the stage (210). The OLED devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the laser light includes making the irradiation intensity of laser light for at least part of the interface between the intermediate region (30i) and the glass base (10) lower than the irradiation intensity of laser light for the interface between the flexible substrate regions (30d) and the glass base (10).

A peeling method is provided. In a first step, a resin layer is formed over a support substrate, openings are formed along two opposite sides of a periphery of the resin layer in a top view, an element layer is formed over the resin layer and positioned on an inner side than the openings in the top view, and the support substrate and a counter substrate are bonded to each other so that an adhesive layer is in contact with the support substrate in the openings, thereby forming a process member. In a second step, an entire surface of the process member is irradiated with light from the support substrate side. In a third step, a blade is inserted into an end portion of the process member from an interface between the support substrate and the resin layer or from the resin layer, and is made to pass through the openings.

A method for removing plate-like elements, such as panels, paneling elements, plates, laminas, covering layers, and the like, coupled stably to a respective base by way of the interposition of an adhesive, which consists in: exposing, in a step a., the plate-like element to be removed to a source of infrared radiation to increase the temperature of the plate-like element and consequently of the adhesive by the heat conveyed by the infrared radiation; extending, in a step b., the exposure of the plate-like element to the source until the mechanical properties of the adhesive are lost; removing, in a step c., the plate-like element from the base.

A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of the substrate, the first release layer being absorptive of light having a first wavelength for being decomposed by the light; an adhesive layer overlying the first release layer, and a second release layer overlying the adhesive layer. The second release layer is absorptive of light having a second wavelength for being decomposed by the light having the second wavelength. The bonded structure further contains a handle substrate that overlies the second release layer, where the handle substrate is substantially transparent to the light having the first wavelength and the second wavelength. Also disclosed is a debonding method to process the bonded structure to remove and reclaim the adhesive layer for re-use. In another embodiment a multi-step method optically cuts and debonds a bonded structure.

The disclosure relates to a method for separating a layer from a composite structure, the structure comprising a composite stack formed from at least a support substrate, which is partially transparent at a determined wavelength, the layer to be separated and a separation layer interposed between the support substrate and the layer to be separated, the method comprising irradiation of the separation layer through the support substrate by means of incident light ray at the determined wavelength in order to induce weakening or separation by exfoliation of the separation layer, the light ray being inclined so as to form an angle of incidence such that >.sub.min, where .sub.min=sin.sub.1((.sup.n1/n.sub.0)sin(tan.sup.1(s/2h))), n1 and n0, respectively, being the refractive index of the support substrate and the refractive index of the external medium in contact with the support substrate, from which the ray comes, S being the width of the ray and h being the thickness of the support substrate.

A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of the substrate, the first release layer being absorptive of light having a first wavelength for being decomposed by the light; an adhesive layer overlying the first release layer, and a second release layer overlying the adhesive layer. The second release layer is absorptive of light having a second wavelength for being decomposed by the light having the second wavelength. The bonded structure further contains a handle substrate that overlies the second release layer, where the handle substrate is substantially transparent to the light having the first wavelength and the second wavelength. Also disclosed is a debonding method to process the bonded structure to remove and reclaim the adhesive layer for re-use. In another embodiment a multi-step method optically cuts and debonds a bonded structure.

A wafer de-bonding device comprises a stage (1) for holding a device wafer and a carrier wafer bonded together, and a tool (2) with a gas outlet (2.2) disposed in proximity to the stage (1) through an adjustment device for control the tool (2) to move towards or away from the stage (1), the tool (2) being provided with a bit (2.1) to cut a notch into a film or an adhesive layer at a junction of the bonded wafers, the gas outlet (2.2) being provided on the tool bit (2.1), the tool (2) being further provided with a gas inlet (2.3) in communication with the gas outlet (2.2), the gas inlet (2.3) being connected to a gas jet generator so as to direct a gas jet towards the junction of the bonded wafers on the stage (2). The wafer de-bonding device has a high degree of automation and simple operations.

A method is provided for decomposition of a polymeric article, wherein the polymeric article contains a polymer and one or more energy modulation agents, by applying an applied energy to the polymeric article, wherein the one or more energy modulation agents convert the applied energy into an emitted energy sufficient to cause bond destruction within the polymer.

Touchscreen computing devices are often assembled by applying an adhesive to an interface perimeter between a cover glass and a chassis. Occasionally, a device is de-bonded to troubleshoot errors in the functionality of the device. The adhesive often is resistant to releasing the bond between the cover glass and a chassis by mechanical force and the cover glass may be damaged during disassembly. Passive and/or active de-bonding aids facilitate transfer of thermal energy to the adhesive in a manner that avoids or minimizes the transfer of thermal energy to heat-sensitive components of the device.