Y10T29/49121

Multi-layer substrate for semiconductor packaging

The present invention provides a semiconductor substrate (105, 105a) comprising two or more layers of built-up structural layers (120, 220) formed on a sacrificial carrier (110). Each built-up structural layer, comprising a conductor trace layer (114a,) and an interconnect (118a, 218a), is molded in a resin molding compound. A top surface of the molded compound is abrasively ground and then deposited with an adhesion layer (123, 124, 224). A multi-layer substrate (105, 105a) is then obtained after an outermost conductor trace layer (128a, 228a) is formed on the adhesion layer and the carrier (110) or reinforcing ring (110b) is removed.

Selective planishing method for making a semiconductor device
10438816 · 2019-10-08 · ·

In a method for fabricating semiconductor devices a leadframe pattern is formed from a flat tape of base metal. A plurality of additional metal layers is plated on the patterned tape of base metal. The surface of the metal layers is roughed. A plurality of sites for assembling semiconductor chips are created. The sites alternate with zones for connecting the leadframe pattern to molding compound runners A selected first set of leadframe areas are selectively planished creating flattened areas offsetting a second set of leadframe areas. A semiconductor chip is attached to each site.

Planar cavity MEMS and related structures, methods of manufacture and design structures

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

BACK-TO-BACK STACKED DIES

Embodiments disclosed herein provide for a circuit including first die having an active side and a backside, wherein the first die is flip-chip mounted to a carrier. The circuit also includes a second die stacked on the backside of the first die, wherein the second die is stacked on the first die such that a backside of the second die is facing the backside of the first die and an active side of the second die faces away from the first die.

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES
20190248644 · 2019-08-15 ·

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES
20190233277 · 2019-08-01 ·

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Integrated circuit including sensor having injection molded magnetic materials having different magnetic remanences
10355197 · 2019-07-16 · ·

An integrated circuit includes a magnetic field sensor and an injection molded magnetic material enclosing at least a portion of the magnetic field sensor.

METHOD FOR PRODUCING AN ELECTRIC COMPONENT CARRIER FOR AUTOMOBILE APPLICATIONS
20190182963 · 2019-06-13 · ·

A method for producing an electric component carrier for automobile applications, in particular an electric component carrier for a lock. The electric component carrier is equipped with a conductive track arrangement and a base plate, which supports the conductive track. In the initial state, the conductive track arrangement has one or more separation points depending upon the required mode of operation in the operational state. According to the invention, the conductive track arrangement in the initial state is coated at least partially with a casting compound by means of injection molding and then the separation point is introduced into the free region.

Planar cavity MEMS and related structures, methods of manufacture and design structures

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES
20190169017 · 2019-06-06 ·

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.