A method for coating a component for use in a semiconductor chamber for plasma etching includes providing a component for use in a semiconductor manufacturing chamber, loading the component into a deposition chamber, cold spray coating a metal powder onto the component to form a coating on the component, and anodizing the coating to form an anodization layer.

An apparatus includes a ceramic matrix composite (CMC) component and an interface coating on the CMC component, wherein the interface coating includes a layer of at least one of the following compositions: 40-50 wt % Nb, 28-42 wt % Al, 4-15 wt % Cr, 1-2 wt % Si; 90-92 wt % Mo, 4-5 wt % Si, 4-5 wt % B; or 60-80 wt % V, 20-30 wt % Cr, 2-15 wt % Ti.

The invention provides a slip layer substrate which can reduce the thermal residual stresses between components induced by their mismatch of thermal expansion, thus greatly improve the reliability of electronic packages. The slip layer substrate comprises: a base material; a first metallization layer formed on the base material; a first diffusion barrier layer formed on the first metallization layer; a slip layer formed on the first diffusion barrier layer; a second diffusion barrier layer formed on the slip layer; and a second metallization layer formed on the second diffusion barrier layer.

An embodiment relates to an ultrasonic additive manufacturing process, comprising joining a foil comprising a bulk metallic glass to a substrate; and forming a cladded composite comprising the foil and the substrate; wherein a thickness of the cladded composite is greater than a critical casting thickness of the bulk metallic glass, wherein the cladded composite comprises a cladding layer of the bulk metallic glass on the substrate and the bulk metallic glass comprises approximately 0% crystallinity, approximately 0% porosity, less than 50 MPa thermal stress, approximately 0% distortion, approximately 0 inch heat affected zone, approximately 0% dilution, and a strength of about 2,000-3,500 MPa.