Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

In one implementation, the presently disclosed technology teaches an apparatus with a head attached to an end of a baseplate. The baseplate includes a tilted section that causes a torsion axis of the baseplate to pass near the head. In another implementation, the presently disclosed technology teaches an apparatus with a load beam attached to a baseplate. The apparatus also includes a head attached to an opposite end of the load beam from the baseplate. The baseplate includes a mass-shifted section that causes a torsion axis of the apparatus to pass through the head. In yet another implementation, the presently disclosed technology teaches a method for reducing baseplate resonance amplitude. The method includes shifting a baseplate mass on a suspension toward an adjacent disc surface to move a baseplate torsion axis to pass near a head.

A magnetoresistive (MR) sensor shield shields against both down track and cross-track interference and is formed in a single deposition step. A tail portion of the shield is eliminated by including a non-magnetic material adjacent to opposite sides of a middle portion of the sensor stack.

The present invention is directed to the fabrication of head sliders for use in hard disk drives, and in particular the provision and usage of electrical bond pads on the slider surface structure to accommodate needs of the fabrication process as well as slider operation within a disk drive.

The present invention is directed to the fabrication of head sliders for use in hard disk drives, and in particular the provision and usage of electrical bond pads on the slider surface structure to accommodate needs of the fabrication process as well as slider operation within a disk drive.

Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

The use of supermalloy-like materials such as NiFeMe where Me is one or more of Mo, Cr, and Cu for the side and top shields of a magnetic bit sensor is shown to provide better shielding protection from stray fields because of their extremely high permeability. Moreover, the side shield may comprise a stack in which a Ni, Fe, Co, FeNi, CoFe, or FeCo is sandwiched between two NiFeMe layers to enhance the bias field on an adjacent free layer. Including NiFeMe in a side shield results in an increase in readback amplitude under the same asymmetric sigma. For these sensors, the signal to noise ratio was higher and the bit error rate was lower than with conventional materials in the side shield. A method is disclosed for forming a magnetic bit sensor having supermalloy-like materials in the side shields.

Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

A magnetic read head including a first read element magnetically coupled to a bottom shield; a second read element magnetically coupled to a top shield; a magnetic shielding structure that magnetically shields the first read element from the second read element; and a first electrical contact electrically coupled to the bottom shield, a second electrical contact electrically coupled to the top shield and a third electrical contact electrically coupled to the magnetic shielding structure.

A method provides a magnetic write apparatus. The method includes providing a pole including a pole tip, a yoke, a pole bottom and a pole top. The pole is seam free and formed vertically in a direction from the pole bottom toward the pole top. At least one coil for energizing the pole is also provided. In some aspects, providing the pole may include removing a portion of an intermediate layer to form a trench therein. The trench has a shape and location corresponding to the pole, a bottom, a top and sides. A conductive layer is deposited in the trench and on a top surface of the intermediate layer. Insulating layer(s) are provided on the sides of the trench. Only part of the conductive layer on the trench bottom is exposed. Pole material(s) are grown on the exposed portion of the conductive layer to provide the pole.