A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 m or more and 1.3 m or less.

Provide is a metal-coated liquid-crystal polymer film that is suitable for microcircuit processing and capable of reducing the transmission loss of circuits. The metal-coated liquid-crystal polymer film comprising: a polymer film comprising a polymer film main body capable of forming an optically anisotropic melt phase; a first metal layer layered on at least one side of the polymer film main body; and a second metal layer layered on the first metal layer, wherein in an analysis of oxygen concentration in a thickness direction using XPS, the average oxygen concentration of the first metal layer is 2.5 atom % or less.

In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 m. In particular examples, the distance is less than about 1 m. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.

Provided is a production method for a layered product in which a metal film can be formed on the surface of a polyarylene sulfide (PAS) molded article with a high adhesive force by a simple step. Further, provided are: a polyarylene sulfide resin composition and a molded article that can be used in the layered product in which a metal film can be formed on the surface of the PAS molded article with a high adhesive force by a simpler step; and production methods therefor. More specifically, provided are: a polyarylene sulfide resin composition obtained by blending a polyarylene sulfide resin, a thermoplastic elastomer and/or a hydrolyzable thermoplastic resin, a carbonate, and a polyolefin-based wax; a molded article which is obtained by melt-molding the polyarylene sulfide resin composition and in which the surface is roughened; a layered product having a metal plating layer; and production methods therefor.

A bi-layer protective coating for a metal component, the bi-layer protective coating comprising a bond coating that is metallurgically fused to a substrate of the metal component, wherein the bond coating comprises one or more rare metals and a top coating that is mechanically bonded to the bond coating, wherein the top coating comprises one or more metal oxides, or one or more metal carbides.

A method of electroless gold plating includes a step of forming an underlying alloy layer on a base material and a step of forming a gold plate layer directly on the underlying alloy layer by electroless reduction plating using a cyanide-free gold plating bath. The underlying alloy layer is formed of an M1-M2-M3 alloy, where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn, where Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and where Ru, and M3 is at least one element selected from P and B.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

Coated articles and methods for applying coatings are described. In some cases, the coating can exhibit desirable properties and characteristics such as durability, corrosion resistance, and high conductivity. The articles may be coated, for example, using an electrodeposition process.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)