A multi-layered board includes: a middle conductive layer; a first dielectric layer that is disposed directly on a first surface of the middle conductive layer; a second dielectric layer that is disposed directly on a second surface of the middle conductive layer; a first outer surface conductive layer that is disposed directly on an outer side of the first dielectric layer; and a second outer surface conductive layer that is disposed directly on an outer side of the second dielectric layer. The first outer surface conductive layer serves as a first outer surface of the multi-layered board, and the second outer surface conductive layer serves as a second outer surface of the multi-layered board. The middle conductive layer is solidly formed over an entire planar direction of the multi-layered board. The first dielectric layer and the second dielectric layer each independently have a thickness variation of 15% or less.

A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 μm or less and a number density of 0.015/μm2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900° C. for a retention time of 10 to 60 minutes.

A copper alloy plate including 0.3 mass % or more and 1.2 mass % or less of Mg, 0.001 mass % or more and 0.2 mass % or less of P, and the balance Cu with inevitable impurities in a thickness center portion in a plate thickness direction; Mg concentration on a plate surface is 30% or less of bulk Mg concentration at the thickness center portion; a surface layer part having a depth from the plate surface to where it is 90% of the bulk Mg concentration is provided; and in the surface layer part, the Mg concentration increases from the plate surface toward the thickness center portion with a concentration gradient 1.8 mass %/μm or more and 50 mass %/μm or less.

A heat sink plate includes a first layer made of copper (Cu) or a copper (Cu) alloy, a second layer formed on the first layer and made of molybdenum (Mo) or an alloy that includes copper (Cu) and one or more components selected from molybdenum (Mo), tungsten (W), carbon (C), chromium (Cr), titanium (Ti), and beryllium (Be), a third layer formed on the second layer and made of copper (Cu) or a copper (Cu) alloy, a fourth layer formed on the third layer and made of molybdenum (Mo) or an alloy that includes copper (Cu) and one or more components selected from molybdenum (Mo), tungsten (W), carbon (C), chromium (Cr), titanium (Ti), and beryllium (Be), and a fifth layer formed on the fourth layer and made of copper (Cu) or a copper (Cu) alloy.

A sliding member of the present invention includes a base material and a coating layer that is formed on the base material. The coating layer includes a particle aggregate, and the particle aggregate contains two or more kinds of precipitation hardened copper alloy particles that have different compositions. The sliding member has high coating strength and superior wear resistance.

To provide a sliding member including an overlay capable of realizing good fatigue resistance while preventing interlayer peeling. A sliding member including an overlay formed of an alloy plating film of Bi and Sb, and the overlay is bonded to a lining formed of a copper alloy via an intermediate layer containing Ag as a main component.

Microfeature workpieces having alloyed conductive structures, and associated methods are disclosed. A method in accordance with one embodiment includes applying a volume of material to a bond pad of a microfeature workpiece, with the volume of material including a first metallic constituent and the bond pad including a second constituent. The method can further include elevating a temperature of the volume of material while the volume of material is applied to the bond pad to alloy the first metallic constituent and the second metallic constituent so that the first metallic constituent is alloyed generally throughout the volume of material. A thickness of the bond pad can be reduced from an initial thickness T1 to a reduced thickness T2.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

A metallic material that includes a base material; and a surface layer formed on a surface of the base material and exposed on an outermost surface, wherein the surface layer contains Ag, and In less than the Ag in atomic ratio, and a connection terminal being made of the metallic material, wherein the surface layer is formed on a surface of the base material, at least in a contact portion electrically contacting an opposite electrically conductive member.

A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 μm or less and a number density of 0.015/μm2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900° C. for a retention time of 10 to 60 minutes.