Patent classifications
Y10T29/49165
MANUFACTURING METHOD OF PACKAGE STRUCTURE
A package structure includes a metal layer, a composite layer of a non-conductor inorganic material and an organic material, a sealant, a chip, a circuit layer structure, and an insulating protective layer. The composite layer of the non-conductor inorganic material and the organic material is disposed on the metal layer. The sealant is bonded on the composite layer of the non-conductor inorganic material and the organic material. The chip is embedded in the sealant, and the chip has electrode pads. The circuit layer structure is formed on the sealant and the chip. The circuit layer structure includes at least one dielectric layer and at least one circuit layer. The dielectric layer has conductive blind holes. The insulating protective layer is formed on the circuit layer structure. The insulating protective layer has openings, so as to expose parts of the surface of the circuit layer structure in the openings.
Electronic device and method for manufacturing the same
An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.
METHOD FOR REPAIRING A FINE LINE
A method for repairing a fine line is provided. Nano metal particles are filled in a defect of a circuit board. The nano metal particles in the defect are irradiated by a laser, or heated, such that the nano metal particles in the defect are metallurgically bonded to an original line of the circuit board. A surface of the circuit board is cleaned to remove residual nano metal particles on parts of the circuit board where metallurgical bonding is not performed, thereby completing line repairing of the circuit board.
SIMULTANEOUS AND SELECTIVE WIDE GAP PARTITIONING OF VIA STRUCTURES USING PLATING RESIST
A multilayer printed circuit board is provided having a first conductive layer and a first plating resist selectively positioned within the first conductive layer. A second plating resist may be selectively positioned within a second conductive layer. A through hole extends through the first plating resist in the first conductive layer and the second plating resist in the second conductive layer. An interior surface of the through hole is plated with a conductive material except along a length between the first plating resist and the second plating resist. This forms a partitioned plated through hole having a first via segment electrically isolated from a second via segment.
CIRCUIT BOARD AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Circuit board includes conductive plate, core dielectric layer, metallization layer, first build-up stack, second build-up stack. Conductive plate has channels extending from top surface to bottom surface. Core dielectric layer extends on covering top surface and side surfaces of conductive plate. Metallization layer extends on core dielectric layer and within channels of conductive plate. Core dielectric layer insulates metallization layer from conductive plate. First build-up stack is disposed on top surface of conductive plate and includes conductive layers alternately stacked with dielectric layers. Conductive layers electrically connect to metallization layer. Second build-up stack is disposed on bottom surface of conductive plate. Second build-up stack includes bottommost dielectric layer and bottommost conductive layer. Bottommost dielectric layer covers bottom surface of conductive plate. Bottommost conductive layer is disposed on bottommost dielectric layer and electrically connects to metallization layer. First build-up stack includes more conductive and dielectric layers than second build-up stack.
Interconnections for a substrate associated with a backside reveal
An apparatus relating generally to a substrate is disclosed. In this apparatus, a post extends from the substrate. The post includes a conductor member. An upper portion of the post extends above an upper surface of the substrate. An exterior surface of the post associated with the upper portion is in contact with a dielectric layer. The dielectric layer is disposed on the upper surface of the substrate and adjacent to the post to provide a dielectric collar for the post. An exterior surface of the dielectric collar is in contact with a conductor layer. The conductor layer is disposed adjacent to the dielectric collar to provide a metal collar for the post, where a top surface of each of the conductor member, the dielectric collar and the metal collar have formed thereon a bond structure for interconnection of the metal collar and the conductor member.
Methods for producing laminate and substrate for mounting a semiconductor device
A method for producing a laminate that includes at least the following: providing a first intermediate laminate comprising a carrier substrate including a support therein and a peelable metal layer formed on at least one surface of the carrier substrate; forming, in a section not serving as a product of the first intermediate laminate, a first hole reaching at least the support in the carrier substrate from a surface of the first intermediate laminate, to prepare a second intermediate laminate with the first hole; stacking and disposing on the surface where the first hole is formed of the second intermediate laminate, an insulating material and a metal foil in this order when viewed from the surface; and pressurizing the second intermediate laminate, the insulating material and the metal foil in the stacking direction thereof with heating, to prepare a third intermediate laminate where the first hole is filled with the insulating material; and performing treatment with a chemical agent on the third intermediate laminate.
Method for manufacturing electronic device
An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.
Electronic module
The present invention relates to an electronic module. In particular, to an electronic module which includes one or more components embedded in an installation base. The electronic module can be a module like a circuit board, which includes several components, which are connected to each other electrically, through conducting structures manufactured in the module. The components can be passive components, microcircuits, semiconductor components, or other similar components. Components that are typically connected to a circuit board form one group of components. Another important group of components are components that are typically packaged for connection to a circuit board. The electronic modules to which the invention relates can, of course, also include other types of components.
INTERCONNECT STRUCTURE
An interconnect structure includes a substrate, a dielectric block, and a conductor. The dielectric block is in the substrate. A dielectric constant of the dielectric block is smaller than a dielectric constant of the substrate, and the dielectric block and the substrate have substantially the same thickness. The conductor includes a first portion extending from a top surface to a bottom surface of the dielectric block and a second portion extending along and contacting the top surface of the dielectric block.