Patent classifications
A61B5/293
Detecting apparatus and associated kit and method
The invention concerns a detecting apparatus (12) comprising:—at least two sensors (24, 26, 28), with at least one sensor (24) being an ultrasound transducer adapted to produce ultrasound waves, and—a positioning device (16) defining several compartments (22), each compartment (22) being adapted to hold a sensor (24, 26, 28) and each compartment (22) being located at predetermined location, the positioning device (16) comprising a holder adapted to be fixed on the skull of a subject, the positioning device (16) being adapted to be maintained on the head of the subject using the holder.
Control method of iGallery, control system of iGallery, and computer readable storage medium
This disclosure discloses a control method of iGallery, a control system of iGallery, and a computer readable storage medium. The control method includes determining identity information of a viewer in front of the iGallery, based on a preset target emotion state and the identity information, invoking a pre-stored control instruction corresponding to the identity information in the target emotion state, and controlling the iGallery to correspondingly adjust its display in accordance with the invoked control instruction.
DEVICE FOR ASSESSMENT OF BRAIN SIGNALS
A method for assessment of brain signals of a patient includes determining, by one or more processors, a cluster of neural data occurring at a brain of the patient and outputting, by the one or more processors, a request for a user to provide patient state information for the cluster of the neural data in response to determining that the cluster of the neural data is occurring at the brain of the patient. The method further includes associating, by the one or more processors, the patient state information with the cluster of the neural data to generate patient assessment information and outputting, by the one or more processors, the patient assessment information.
ELECTRODE CHARACTERIZATION FOR PROGRAMMING GUIDANCE
A system includes processing circuitry configured to determine, for each electrode combination of a plurality of electrode combinations, a metric based on a sensed electrical signal from the electrode combination. The processing circuitry is further configured to determine, for each electrode of a plurality of electrodes, a subset of electrode combinations of the plurality of electrode combinations, each electrode combination of the subset of electrode combinations comprising the electrode, wherein the subset of electrode combinations comprises at least two electrode combinations. The processing circuitry is further configured to determine, for each electrode of the plurality of electrodes, a composite metric based on the metrics of the subset of electrode combinations. The processing circuitry is further configured to determine, select, based on the composite metrics of the plurality of electrodes, at least one electrode for at least one of sensing electrical signals or delivering electrical stimulation.
SYSTEM AND METHOD FOR DETERMINING DEEP BRAIN STIMULATION PARAMETERS
A method of determining brain stimulation parameters includes applying Low Frequency Stimulation (LFS) to a contact of a multi-contact electrode implanted in a target structure in an individual's brain. Evoked Compound Activity (ECA) evoked in the target structure by the LFS is measured. A range of frequencies for delivering brain stimulation within a predetermined range based on a phase space extracted from the ECA is determined. Stimulation frequencies are applied to the contact of the multi-contact electrode within the determined range of frequencies. High Frequency Oscillations (HFO) evoked in the target structure by the applied stimulation frequencies within the determined range are measured. A frequency evoking HFO above a predetermined threshold is determined. The determined frequency is selected as a treatment frequency for the target structure.
SYSTEM AND METHOD FOR LOCATING AN IMPLANTATION SITE IN THE BRAIN
A method of locating an implantation site in the brain includes inserting a plurality of multi-contact electrodes into a region of a target structure in an individual's brain. High Frequency Stimulation (HFS) is applied to a contact of a multi-contact electrode of the plurality of multi-contact electrodes. High Frequency Oscillations (HFO) evoked in the region of the target structure by the HFS are measured. Evoked Compound Activity (ECA) evoked in the region of the target structure by the HFS is measured. It is determined if at least one of the HFO and the ECA is above a predetermined threshold. If at least one of the HFO and the ECA is above the predetermined threshold, a location of the contact of the multi-contact electrode is identified as a site for electrode implantation in the individual's brain.
Probe insertion device for implanting a probe into tissue
A probe insertion device for implanting a probe into tissue includes a rigid base that selectively attaches to the probe due to a bond between the base and the probe, that provides a structural backbone to the probe, is longitudinally aligned with the probe, and can be adapted to receive a fluid between the base and the probe. The probe insertion device can include a surface covering at least a portion of the base that reduces the bond between the base and the probe in the presence of the fluid.
AN IMPLANTABLE ELECTRODE DEVICE AND A METHOD FOR MANUFACTURING THEREOF
An implantable electrode device includes a carrier made of a polymer material, at least one measurement electrode formed by an electrically conducting pad located on the carrier, wherein the electrically conducting pad has a contact surface, a barrier layer enclosing the carrier by covering all surfaces of the carrier, wherein the contact surface of the electrically conducting pad is exposed to an outside environment, at least one electrically conducting trace, and at least one electrically conducting terminal. The electrically conducting trace can electrically connect the measurement electrode to the electrically conducting terminal. A surface of the implantable electrode device on a side on which the measurement electrode is located can have a maximum valley depth or a maximum peak height between the contact surface of the measurement electrode and a meanline of a surface of the implantable electrode device, excluding measurement electrodes, being equal to or smaller than 100 micrometres.
INPUT CIRCUITRY FOR RECEIVING ELECTRODE SIGNALS, A BIOPOTENTIAL SIGNAL SENSOR SYSTEM, A NEURAL PROBE, AND A METHOD FOR AMPLIFYING ELECTRODE SIGNALS
An input circuitry for receiving electrode signals comprises: a plurality of channels for providing a multiplexed electrode signal input, each channel comprising a multiplexing switch for selecting one channel at a time, and an input transistor configured to be connected to an electrode, wherein the input transistor is configured to receive an electrode signal at a gate; and a reference input transistor, which is configured to be connected to a reference voltage at a gate; wherein an electrode signal received at a selected channel together with the reference voltage form input signals to an instrumentation amplifier; wherein the input circuitry is configured such that the input transistor of the selected channel forms part of a first flipped voltage follower and the reference input transistor forms part of a second flipped voltage follower.
INPUT CIRCUITRY FOR RECEIVING ELECTRODE SIGNALS, A BIOPOTENTIAL SIGNAL SENSOR SYSTEM, A NEURAL PROBE, AND A METHOD FOR AMPLIFYING ELECTRODE SIGNALS
An input circuitry for receiving electrode signals comprises: a plurality of channels for providing a multiplexed electrode signal input, each channel comprising a multiplexing switch for selecting one channel at a time, and an input transistor configured to be connected to an electrode, wherein the input transistor is configured to receive an electrode signal at a gate; and a reference input transistor, which is configured to be connected to a reference voltage at a gate; wherein an electrode signal received at a selected channel together with the reference voltage form input signals to an instrumentation amplifier; wherein the input circuitry is configured such that the input transistor of the selected channel forms part of a first flipped voltage follower and the reference input transistor forms part of a second flipped voltage follower.