The present invention relates generally to the field of emission control equipment for boilers, heaters, kilns, or other flue gas-, or combustion gas-, generating devices (e.g., those located at power plants, processing plants, etc.) and, in particular to a new and useful method and apparatus for: (i) reducing halogen levels necessary to affect gas-phase mercury control; (ii) reducing or preventing the poisoning and/or contamination of an SCR catalyst; and/or (iii) controlling various emissions. In still another embodiment, the present invention relates to a method and apparatus for: (A) simultaneously reducing halogen levels necessary to affect gas-phase mercury control while achieving a reduction in the emission of mercury; and/or (B) reducing the amount of selenium contained in and/or emitted by one or more pieces of emission control equipment for boilers, heaters, kilns, or other flue gas-, or combustion gas-, generating devices (e.g., those located at power plants, processing plants, etc.).

The present invention relates to a combined C3/C4 splitter with a membrane system. More specifically, the present invention relates to a combined C3/C4 splitter column to separate highly pure propylene product from a liquefied petroleum gas stream, which eliminates a C3 splitter having over 120 trays and the additional equipment that a C3 splitter requires.

Provided is a water quality analysis device capable of keeping the device in a clean state without leaving an operation at the time of device power supply activation to an operator and without wasting time and wash water. The water quality analysis device is configured such that: a memory 21 capable of storing a stored content in a cut-off state of the device power supply is provided; the states of the vessels, such as an IC reactor 1 and a TC reactor 2, in which sample water is injected at the time of an analysis operation are sequentially stored in the memory 21; contents of the memory 21 are read at the time of the device power supply activation; and a cleaning operation is automatically executed according to prescribed procedures with the states read for each reactor 1 and 2 as a starting point. Thus, even after the power supply interruption due to, e.g., power outage, the device is kept in a clean state with minimum necessary operations.

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH.sub.4, H.sub.2O, H.sub.2, NF.sub.3, SF.sub.6, F.sub.2, HCl, HF, Cl.sub.2, and HBr. Representative condensing abating reagents include, for example, H.sub.2, H.sub.2O, O.sub.2, N.sub.2, O.sub.3, CO, CO.sub.2, NH.sub.3, N.sub.2O, CH.sub.4, and combinations thereof.

In a process for the removal of hydrogen chloride and/or sulfur oxides from a landfill gas stream, which contains impurities such as siloxanes, H.sub.2S, organic and inorganic sulfides and volatile organic compounds (VOCs), the heated gas is passed through a siloxane removal bed, where siloxanes are absorbed and then through one or more sulfur removal beds, where hydrogen sulfide and/or organic sulfides are absorbed. The effluent is passed through a reactor containing an oxidation catalyst enabling catalytic oxidation of VOCs, organic and inorganic CI- and/or S-containing compounds, COS and CS.sub.2 to their respective combustion products, and finally the effluent from the reactor is passed through one or more beds, where hydrogen chloride and/or sulfur oxides are absorbed.

Autonomous localized permeability material systems are provided that can include: a dynamically permeable porous material; and immobilized reagents operatively associated with the porous material in sufficient proximity to trigger a localized change in material pore size upon reagent reaction. Methods for preparing these materials are also provided as well as methods for autonomously modifying localized permeability of material.

The invention relates to a method of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process and its capturing device. The method comprises providing aerosolized water molecules to be entered into a reaction chamber of a waste gas treatment tank; and capturing a product generated after a sintering reaction of the waste gas by diffusion distributing of the aerosolized water molecules, wherein, the aerosolized water molecules are diffusion distributed between a bottom edge of a waste gas reaction end in the reaction chamber and a tank wall surrounding the reaction chamber. The present invention further provides a device for capturing a sintered product for implementing the method. The object of the present invention is to solve problems saying that a semiconductor exhaust gas is processed by a high temperature sintering treatment, the generated SiO.sub.2 powders, the WO.sub.2 powders or the BO.sub.2 powders are extremely fine, the F.sub.2 gas is small molecules, and it is not easy to capture them during a rear stage water washing program.

Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%. The present invention solves the technical difficulty the normal-pressure waste hydrogen recovered in the manufacturing process of semiconductor can't be returned to the manufacturing process of semiconductor for reuse.

An object of the present invention is to provide an exhaust gas purification catalyst composition and an exhaust gas purification catalyst, each of which utilizes a phosphorus capturing material that enables solving a problem of MAO, and in order to achieve the object, a complex oxide containing Mg, Ba, and Al, wherein the complex oxide has a spinel-type crystal structure, and wherein a molar ratio of a Mg content to an Al content in the complex oxide is 0.010 or more and 0.25 or less is used as a phosphorus capturing material.

In a process for the removal of siloxanes from biogas streams, especially a landfill gas stream or a gas stream from anaerobic digesters, the gas stream is first passed through a conventional siloxane removing unit to remove the majority of the siloxanes and subsequently passed over a selected catalyst with polishing effect, thereby removing remaining traces of siloxanes. The catalyst with polishing effect is chosen from i.a. zeolites, porous silica, titania and various metals on alumina or titania.