To prevent turbulence on a surface of a plating solution as much as possible and suppress spattering and splashing of the plating solution even when the plating solution is stirred. Provided is a wave absorbing member that is attachable to a paddle moveable in a horizontal direction to stir liquid. The wave absorbing member includes a thin plate shaped body portion configured to move on a liquid surface when moving in the horizontal direction and a front end portion designed to be tapered toward an end from the body portion.

An apparatus for recirculating fluids in semiconductor systems. The apparatus including a base portion, an inlet portion coupled to a first end of the base portion, and a nozzle coupled to a second end of the base portion. The nozzle including a helical groove extending from a position near a nozzle base portion to a position near a tip of the nozzle portion. The helical groove extending from an exterior surface through the nozzle portion to an interior surface of the nozzle portion. Methods of using the apparatus in a semiconductor recirculation system are also disclosed.

Systems and methods are described for dissolving ammonia gas in deionized water. The system includes a deionized water source and a gas mixing device including a first inlet for receiving ammonia gas, a second inlet for receiving a transfer gas, and a mixed gas outlet for outputting a gas mixture comprising the ammonia gas and the transfer gas. The system includes a contactor that receives the deionized water and the gas mixture and generates deionized water having ammonia gas dissolved therein. The system includes a sensor in fluid communication with at least one inlet of the contactor for measuring a flow rate of the deionized water, and a controller in communication with the sensor. The controller sets a flow rate of the ammonia gas based on the flow rate of the deionized water measured by the sensor, and a predetermined conductivity set point.

According to one embodiment, a plating apparatus for electroplating a substrate including a non-pattern area is provided. The plating apparatus includes a plating tank for holding the plating solution, an anode configured to be connected to a positive electrode of a power supply, and a paddle configured to move in the plating tank to stir the plating solution held in the plating tank. The paddle is configured such that at least a part of the non-pattern area of the substrate is constantly blocked when the paddle is viewed from the anode while the paddle is stirring the plating solution.

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

Provided are a method for supplying water of specified concentration, including: a step of adding at least two liquids, a conductive first liquid and a non-conductive second liquid, to ultrapure water to produce water of specified concentration containing a first liquid-component and a second liquid-component at specified concentrations, in which a mixed solution in which the first liquid and the second liquid are mixed at a specified mixing ratio in advance is prepared; and the mixed solution is added to the ultrapure water so that a conductivity or specific resistance of the ultrapure water after the addition satisfies a specified value, and an apparatus therefor.

Systems and methods are described for supplying a rinsing liquid including ultrapure water and an ammonia gas. The system includes an ultrapure water source and a gas mixture source in fluid communication with a contactor. The gas mixture includes ammonia gas and a carrier gas. The system includes a control unit configured to adjust a flow rate of the ultrapure water source such that an operational pressure of the contactor remains below a pressure threshold. The system includes a compressor configured to remove a residual transfer gas out of the contactor. The contactor generates a rinsing liquid having ultrapure water and a concentration of the ammonia gas dissolved therein. The system includes a pump in fluid communication between the contactor and an outlet. The pump is configured to deliver the rinsing liquid having a gaseous partial pressure below the pressure threshold at the outlet.

A resistivity adjustment device includes: a hollow fiber membrane module that is divided by a hollow fiber membrane into a liquid phase side area; a liquid supply pipe that communicates with the liquid phase side area; a liquid discharge pipe that communicates with the liquid phase side area; a gas supply pipe that communicates with the gas phase side area; a gas discharge pipe that communicates with the gas phase side area; a bypass pipe that communicates with the liquid supply pipe and the liquid discharge pipe to bypass the hollow fiber membrane module; and a first on-off valve that is connected to the gas discharge pipe and opens or closes a first passage inside the gas discharge pipe, wherein the first on-off valve opens the first passage to discharge water accumulated in the gas phase side area.

A mixing apparatus includes a phosphoric acid aqueous solution supply, an additive supply, a tank, a phosphoric acid aqueous solution supply path and an additive supply path. The phosphoric acid aqueous solution supply is configured to supply a phosphoric acid aqueous solution. The additive supply is configured to supply an additive configured to suppress precipitation of a silicon oxide. The phosphoric acid aqueous solution supply path is configured to connect the phosphoric acid aqueous solution supply with the tank. The additive supply path is configured to connect the additive supply with the tank. The additive is supplied while fluidity is imparted to the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply into the tank.

Systems and methods are described for dissolving ammonia gas in deionized water. The system includes a deionized water source and a gas mixing device including a first inlet for receiving ammonia gas, a second inlet for receiving a transfer gas, and a mixed gas outlet for outputting a gas mixture comprising the ammonia gas and the transfer gas. The system includes a contactor that receives the deionized water and the gas mixture and generates deionized water having ammonia gas dissolved therein. The system includes a sensor in fluid communication with at least one inlet of the contactor for measuring a flow rate of the deionized water, and a controller in communication with the sensor. The controller sets a flow rate of the ammonia gas based on the flow rate of the deionized water measured by the sensor, and a predetermined conductivity set point.