A mixing hub for use in semiconductor processing tools is provided. The hub may include a plurality of ports arranged about an axis, a mixing chamber, and a plurality of flow paths. Each of the flow paths may fluidically connect a corresponding one of the ports to the mixing chamber and each flow path may include a first passage, a second passage, and a valve interface. Each valve interface may be configured to interface with a valve such that the valve, when installed in the valve interface, is able to regulate fluid flow between the first passage and the second passage. Each valve interface may be located between a first reference plane that is perpendicular to the axis and passes through the corresponding port and a second reference plane that is perpendicular to the axis and passes through the mixing chamber.

Disclosed are an apparatus and a method for liquid-treating a substrate. The substrate treating apparatus includes a liquid supply unit configured to supply a treatment liquid in which a first liquid and a second liquid are mixed, onto the substrate unit, wherein the liquid supply unit includes a nozzle configured to discharge the treatment liquid, a first liquid supply line supplying the first liquid to the nozzle, and a second liquid supply supplying the second liquid to the nozzle, and the nozzle includes a body having a mixing space in which the first liquid and the second liquid are mixed and a buffer space extending from the mixing space, in the interior thereof, and a collision member located in the buffer space and configured to decrease a flow velocity of the treatment liquid supplied to the buffer space.

Systems and methods are described for dissolving ammonia gas in deionized water. The system includes a deionized water source and a gas mixing device including a first inlet for receiving ammonia gas, a second inlet for receiving a transfer gas, and a mixed gas outlet for outputting a gas mixture comprising the ammonia gas and the transfer gas. The system includes a contactor that receives the deionized water and the gas mixture and generates deionized water having ammonia gas dissolved therein. The system includes a sensor in fluid communication with at least one inlet of the contactor for measuring a flow rate of the deionized water, and a controller in communication with the sensor. The controller sets a flow rate of the ammonia gas based on the flow rate of the deionized water measured by the sensor, and a predetermined conductivity set point.

Methods and apparatus for gas mixing are provided. In some embodiments, a gas mixing apparatus includes: a tubular body having a wall extending longitudinally from a first end to a second end and having an outer side and an inner side that surrounds a central through opening and defining a first flow path between the first end and the second end; one or more inlet holes formed in the outer side of the wall; a plurality of exit holes formed in the inner side of the wall and communicating with the central through opening; and a plurality of longitudinal channels formed within the wall fluidly coupled to the one or more inlet holes and the plurality of exit holes, wherein the one or more inlet holes, the plurality of exit holes, and the plurality of longitudinal channels define a recursive second flow path that intersects with the first flow path.

A resistivity adjustment device includes: a hollow fiber membrane module that is divided by a hollow fiber membrane into a liquid phase side area; a liquid supply pipe that communicates with the liquid phase side area; a liquid discharge pipe that communicates with the liquid phase side area; a gas supply pipe that communicates with the gas phase side area; a gas discharge pipe that communicates with the gas phase side area; a bypass pipe that communicates with the liquid supply pipe and the liquid discharge pipe to bypass the hollow fiber membrane module; and a first on-off valve that is connected to the gas discharge pipe and opens or closes a first passage inside the gas discharge pipe, wherein the first on-off valve opens the first passage to discharge water accumulated in the gas phase side area.

A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.

A gas solution supply device 1 includes: a first gas-liquid separator 8 in which gas solution is stored; a second gas-liquid separator 16 provided at a stage subsequent to the first gas-liquid separator 8 and in which gas solution to be supplied to a use point is stored; an intermediate line 17 provided between the first gas-liquid separator 8 and the second gas-liquid separator 16; a pressure booster pump 18 provided on the intermediate line 17 and increases a pressure of gas solution being supplied from the first gas-liquid separator 8 to the second gas-liquid separator 16; a gas supply line 2 that supplies gas as a material of the gas solution; and a gas dissolving unit 20 provided on the intermediate line 17 and dissolves the gas supplied from the gas supply line 2 in the gas solution supplied from the first gas-liquid separator 8.

A mixing hub for use in semiconductor processing tools is provided. The hub may include a plurality of ports arranged about an axis, a mixing chamber, and a plurality of flow paths. Each of the flow paths may fluidically connect a corresponding one of the ports to the mixing chamber and each flow path may include a first passage, a second passage, and a valve interface. Each valve interface may be configured to interface with a valve such that the valve, when installed in the valve interface, is able to regulate fluid flow between the first passage and the second passage. Each valve interface may be located between a first reference plane that is perpendicular to the axis and passes through the corresponding port and a second reference plane that is perpendicular to the axis and passes through the mixing chamber.

A gas mixer may include a first gas channel, a first distribution channel, a second gas channel and a plurality of first connection channels. The first gas channel may be configured to supply a first gas into a reaction chamber. The first distribution channel may surround the first gas channel and is configured to uniformly distribute a second gas within the first distribution channel. The second gas channel may be configured to supply the second gas into the first distribution channel. The plurality of the first connection channels may be connected between the first distribution channel and the first gas channel. Thus, the second gas may be uniformly distributed in the cylindrical first distribution channel. The second gas may then be supplied to the first gas channel through the first connection channels. The second gas may be mixed with the first gas to form a mixed gas. As a result, the mixed gas may be uniformly distributed in the reaction chamber.

A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.