Embodiments relate to polycrystalline diamond compacts (PDCs) including a polycrystalline diamond (PCD) table having a diamond grain size distribution selected for improving performance and/or leachability. In an embodiment, a PDC includes a PCD table bonded to a substrate. The PCD table includes a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween. The plurality of diamond grains includes a first amount being about 5 weight % to about 65 weight % of the plurality of diamond grains and a second amount being about 18 weight % to about 95 weight % of the plurality of diamond grains. The first amount exhibits a first average grain size of about 0.5 m to about 30 m. The second amount exhibits a second average grain size that is greater than the first average grain size and is about 10 m to about 65 m. Other embodiments are directed to methods of forming PDCs, and various applications for such PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.

A method of forming polycrystalline diamond comprised placing a plurality of graphene nano-platelets into a capsule; and subjecting the platelets to a pressure of around 10 GPa to around 20 GPa and a temperature of around 1600 degrees Celsius to around 3000 degrees Celcius to convert the graphene platelets to nano-polycrystalline diamond. There is also disclosed a polycrystalline super hard construction comprising a polycrystalline diamond region comprising polycrystalline diamond material formed according to said method.

A super hard polycrystalline construction comprises a body of polycrystalline super hard material comprising a first fraction of super hard grains and a second fraction of super hard grains, the first fraction having a greater average grain size than the super hard grains in the second fraction, the super hard grains in the first and second fraction having a peripheral surface. The super hard grains in the first fraction are bonded along at least a portion of the peripheral surface to at least a portion of a plurality of super hard grains in the second fraction, the super hard grains in the first fraction being spaced from adjacent grains in the first fraction by a distance of between around 50 to around 500 nm.

Provided are a luminescent diamond material and method of producing the same. The method may include the steps of providing a catalyst selected from one or more of the group of cobalt, iron, manganese and nickel; providing an enhancer selected from one or more of the group of boron, germanium, phosphorous, silicon and tin; providing graphite; blending the catalyst, enhancer and graphite to form a homogenized blend; and subjecting the homogenized blend to a high temperature, high pressure process to form a luminescent diamond material having a plurality of diamond particles having a plurality of defect centers, wherein the luminescent diamond material luminesces at a wavelength of about 700 nm to about 950 nm and energy of about 1.77 eV to about 1.30 eV.

A composite polycrystal contains polycrystalline diamond formed of diamond grains that are directly bonded mutually, and compressed graphite dispersed in the polycrystalline diamond.

Polycrystalline diamond compacts (PDCs) include a polycrystalline diamond (PCD) table in which cobalt is alloyed with phosphorous to improve the thermal stability of the PCD table. The PDC includes a substrate and a PCD table including an upper surface spaced from an interfacial surface that is bonded to the substrate. The PCD table includes a plurality of diamond grains defining a plurality of interstitial regions. The PCD table further includes an alloy comprising at least one Group VIII metal and phosphorous. The alloy is disposed in at least a portion of the plurality of interstitial regions.

Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, hydrogen, oxygen, and the remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; hydrogen and oxygen are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.

Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, hydrogen, oxygen, and the remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; hydrogen and oxygen are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.

A polycrystalline diamond body contains diamond particles, the diamond particles have a mean particle size of 50 nm or less, and a crack initiation load is 10 N or more as measured in a fracture strength test by pressing a diamond indenter D with a tip radius Dr of 50 m against a surface of the polycrystalline diamond body at a load rate F of 100 N/min. Accordingly, a polycrystalline diamond body that is tough and has a small diamond particle size, a cutting tool, a wear-resistant tool, a grinding tool, and a method for producing the polycrystalline diamond body are provided.

A method of making molecularly doped nanodiamond. A versatile method for doping diamond by adding dopants into a carbon precursor and producing diamond at high pressure, high temperature conditions. Molecularly doped nanodiamonds that have direct incorporation of dopants and therefore without the need for ion implantation. Molecularly-doped diamonds that have fewer lattice defects than those made with ion implantation.