The present invention relates to an eco-friendly and simple super-hydrophobic coating method that does not use harmful substances and special equipment. Coating according to the present invention may be performed as a single process without special equipment, and because only eco-friendly materials are used, the coating material may be easily used and discarded. In addition, even a three-dimensional pipe or a heat-exchanger having a complex shape may be modified to have super-hydrophobicity by applying the present coating, and a super-hydrophobic metal filter may be manufactured and used for oil-water separation. As a result, the present coating method is eco-friendly, simple, and applicable to various substrates, so it has great potential for application in various industries.

Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

A film forming system includes: a film forming apparatus which includes a processing container, a stage provided in the processing container, a structure provided in the processing container and having recesses, and a window provided on a wall surface of the processing container; a measurement device which includes a light emitter, a light receiver, and a measurer configured to measure a light reflectance for each wavelength in the structure based on an intensity of light emitted to the structure and an intensity of light reflected from the structure; and a control device which includes an estimator configured to estimate a thickness of a film formed on a substrate based on the light reflectance for each wavelength in the structure, and a controller configured to stop film formation on the substrate when the estimated thickness of the film reaches a predetermined thickness.

A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structure includes a stacked pattern and a first spacer layer covering at least a side surface of the stacked pattern. A first flowable material layer including a SiOCH material is formed on the first spacer layer to fill the first opening and cover an upper portion of the first pattern structure. A first curing process including supplying a gaseous ammonia catalyst into the first flowable material layer is performed on the first flowable material layer to form a first cured material layer that includes water. A second curing process is performed on the first cured material layer to form a first low-k dielectric material layer. The first low-k dielectric material layer is planarized to form a planarized first low-k dielectric material layer.

The disclosure provides an apparatus for depositing poly(p-xylylene) onto a component. The apparatus comprises a deposition chamber configured to receive a component to be coated therein; an electrical power supply; a platen, disposed inside the deposition chamber and comprising an electrically conductive material, wherein the platen is electrically connected to the electrical power supply and configured to support the component; a monomer reservoir, configured to receive a monomer of poly(p-xylylene) therein; a monomer conduit extending between the monomer reservoir and the deposition chamber; and a heating means configured to heat the monomer reservoir and the monomer conduit to a temperature of between 25 and 250° C.

Systems and devices for continuous, high-throughput production of electrically conductive yans, fibers or fabrics. In one embodiment, the system comprises a first process chamber for coating the yarn, fiber or fabric with an electrically conductive material and a second process chamber for encapsulating the electrically conductive yarn, fiber or fabric with an encapsulating material. In another embodiment, device for printing an encapsulated electrically conductive material on a yarn, fiber or fabric, includes print head(s) for coating and encapsulating a yarn, fiber or fabric.

The present application describes apparatus (100) for colouring an additively manufactured polymer part, comprising a chamber (106) for locating at least one additively manufactured polymer part (105) to be coloured, a first reservoir (102) for containing dye pigment particles to be suspended in a gas, and fluidly coupled to the chamber, and a further reservoir (104) for containing a solvent vapour, and fluidly coupled to the chamber. A method of colouring an additively manufactured polymer part is also described.

Disclosed herein are coated gemstones, coatings for gemstones, methods of coating gemstones, and methods of using coatings on gemstones to avoid blemishes on gemstones. In some embodiments, diamonds are functionalized with anchor molecules that bind hydrophilic cyclodextrin molecules to confer hydrophilicity on the diamond. In some embodiments, the diamonds resist dirt and grime build-up.

A substrate processing apparatus including: a processing container; a stage installed in the processing container and configured to place a substrate thereon; a ceiling plate installed at a position facing the stage in the processing container; a driver configured to raise and lower the stage; an exhaust port formed in a side wall of the processing container and configured to exhaust a gas in the processing container; and a controller configured to control conductance of a space between the exhaust port and a processing space between the stage and the ceiling plate by controlling the driver to adjust a distance between a peripheral edge portion of the stage and a facing member disposed at a position facing the peripheral edge portion in the processing container.

Embodiments described herein provide a gas supply system for reducing purge time and increasing processing throughput, and an atomic layer deposition (ALD) chamber having the same. The gas supply system includes an inert gas line and a precursor supply line. The inert gas line is configured to be coupled to an inlet of the chamber separate from the precursor supply line. Therefore, the inert gas is supplied concurrently to the precursor supply line and the processing region of the chamber such that total purge time is reduced. The reduction of the total purge time due to the gas supply system increases purge efficiency and increases processing throughput. Furthermore, the gas supply system allows inert gas to be utilized as a dilution gas during flow of precursors.