To dry a substrate formed with a pattern on a front surface satisfactorily and with excellent drying performance, a substrate processing method comprises: a liquid film formation step of forming a liquid film of a processing liquid, in which cyclohexanone oxime is dissolved in a solvent, on a front surface of a substrate formed with a pattern by supplying the processing liquid to the front surface of the substrate; a solidified film formation step of forming a solidified film of the cyclohexanone oxime by solidifying the liquid film of the processing liquid; and a sublimation step of removing the solidified film from the front surface of the substrate by sublimating the solidified film.

Disclosed are a dry ice cleaning and recycling device and a method a connecting rod. The device includes a dry ice ejector module, a clamping module, and a box, and the dry ice ejector module and the clamp module are both arranged in the box; the dry ice ejector module includes a spray gun guide rail and a cleaning nozzle vertically and slidably connected to the spray gun guide rail; and the clamp module includes a clamp guide rail and a clamp horizontally and slidably connected to the clamp guide rail. The device further includes a dry ice recycling device, the dry ice recycling device includes a dry ice recycling collector and a condenser pipe, and two ends of the condenser pipe are communicated with the box and the dry ice recycling collector respectively.

A composition for removal of adhesives comprises a polar solvent, such as benzyl alcohol, in combination with thickeners, dry lubricants, and/or gelling agents to allow for penetration of the adhesive and transformation of the treated adhesive into a solid material that can be readily removed from a surface without forming sticky residue that adheres to the solid material or tool used to remove the adhesive.

A particle removal method includes loading a particle attracting member with a coating layer into a processing chamber of a processing apparatus. The method also includes fixing the particle attracting member on a holder in the processing chamber in a cleaning cycle. The method also includes attracting particles in the processing chamber by the coating layer of the particle attracting member due to a potential difference between the particles and the coating layer. The particles are attracted to the surface of the coating layer. The method further includes loading the particle attracting member with the coating layer and the attracted particles out of the processing chamber, after the cleaning cycle. In addition, the method includes loading a semiconductor wafer into the processing chamber, and performing a semiconductor process on the semiconductor wafer in the processing chamber. The semiconductor process is performed after the cleaning cycle.

According to one embodiment, a substrate treatment device includes a placement stand configured to rotate a substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a liquid supplier configured to supply a liquid on a surface of the substrate opposite to the placement stand, and a controller controlling a rotation speed of the substrate, a flow rate of the cooling gas, or a supply amount of the liquid. The controller sets the liquid on the surface of the substrate to be in a supercooled state, forms a frozen film by freezing the liquid in the super cooled state, and causes crack to generate in the frozen film by decreasing a temperature of the frozen film.

A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

The invention relates to a treatment system for treating workpieces. Devices and methods of the disclosure are configured to perform at least one treatment operation on the workpiece, as well as at least one receiving unit for accommodating the workpiece on or in the treatment device. A transport device is provided that comprises at least one transport unit, with which the workpiece is transferable into a transfer position, from which the workpiece is transferable by means of the at least one receiving unit into a treatment position, as well as a control device for controlling the at least one treatment unit, the at least one receiving unit, and the at least one transport unit.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes discharging a treating liquid including a polymer and a solvent onto a substrate; and solidifying a liquid film of the treating liquid by volatilizing the solvent from the treating liquid on the substrate, and wherein the solidifying a liquid film comprises a first period of stopping the rotation of the substrate or rotating the substrate at a first speed for a first time period.

The present invention provides a method of removing a foreign particle on a first member, comprising: supplying a composition on the first member; pressing a second member against the composition supplied on the first member; curing the composition on the first member after the pressing; and separating the second member together with the composition from the first member, after the curing, wherein in the supplying, a supply amount of the composition to be supplied on the first member is controlled based on a cure shrinkage rate of the composition in the curing and an estimated size of a foreign particle being presumably adhered on the first member, such that a thickness of a portion of the composition cured in the curing, which exists between the second member and the first member, becomes larger than the estimated size.

A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.