The invention relates to a purge composition comprising a polymer formulation which is tacky and suitable to cross-link and/or cure to become less tacky, at least 50% of solids of the polymer formulation comprising a polysiloxane, polyurethane, acrylate resin, epoxy resin, melamine resin, formaldehyde resin, or a mixture of two or more of any of these; and a curing catalyst suitable to cure the polymer formulation, wherein the composition is suitable to cross-link and/or cure at within 0.1 to 120 minutes at a temperature in a range of from 0 to 450° C. within a device into which the composition is injected. The invention also relates to a method of cleaning a material processing device.

A squid-type marine oil containment device includes a track and four oil containment booms. A robotic arm is provided in an elliptic area formed by the track. Sliders are provided on the track. Ends of oil containment booms slide along the track through sliders. Each oil containment boom includes an oil suction pipe, propellers and a plastic separating layer. A middle of the oil suction pipe forms an oil channel. Booster pumps are spacedly provided inside the oil suction pipe and are respectively connected to a hose. Pairs of propellers are spacedly provided at a lower end of the oil suction pipe. Oil suction holes are provided on the oil suction pipe. The plastic separating layer is provided under the oil suction holes. A counterweight is provided at a bottom of the oil containment boom. The invention further provides a method of containing oil using the device.

A composition enables particles to be removed from a surface of a substrate by: applying the composition on the surface of the substrate to form a substrate treatment film on the surface; and bringing a liquid into contact with the substrate treatment film to remove the substrate treatment film from the surface. The composition includes a resin; and a solvent. The solvent includes a first solvent component having a normal boiling point of no less than 175° C. A content of the first solvent component with respect to 100 parts by mass of the resin is no less than 1 part by mass.

A substrate processing method includes: increasing a temperature of a substrate by heating the substrate; after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on a first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed; after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the second rotational speed; and after the processing the first surface of the substrate, decreasing the temperature of the substrate.

The inventive concept provides a substrate treating method. The substrate treating method includes supplying a dissolving solution onto a rotating substrate; and supplying, after the supplying a dissolution solution, a treating liquid including a polymer onto the rotating substrate to form a liquid film.

Methods of removing a film of a biological material from a surface are provided. In embodiments, such a method comprises applying magnetic particles to a surface contaminated with a film of a biological material; and exposing the magnetic particles to a changing magnetic field to move the magnetic particles relative to the contaminated surface, thereby removing the film from the surface.

This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.

Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.

A substrate processing technique including a process of forming a liquid film on an upper surface of a substrate and excellently solidifying the liquid film is provided. A substrate processing method includes an atmosphere control step of supplying a drying gas to a front surface of a substrate on which a pattern has been formed and to which a liquid has adhered and making a dry atmosphere around the front surface of the substrate, a to-be-solidified liquid supplying step of supplying a to-be-solidified liquid to the front surface of the substrate, and a solidification step of forming a solidified mass by solidifying a liquid film of the to-be-solidified liquid. The atmosphere control step is started before the liquid film of the to-be-solidified liquid supplied to the front surface of the substrate in the to-be-solidified liquid supplying step is formed.

Disclosed is a surface treatment method of a Si element-containing wafer having an uneven pattern at a surface thereof, the surface treatment method comprising, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming component and a solvent to the uneven pattern in a state that a liquid is retained in at least the recess portion of the uneven pattern, changing the vapor of the composition into a liquid and replacing the liquid retained in the recess portion with the liquid of the composition, wherein the water-repellent protective film-forming component consists of a compound of the following general formula [1], and wherein the solvent contains at least an acyclic carbonate in an amount of 50 to 100 mass % based on the total amount of the solvent.

R.sup.1.sub.x(CH.sub.3).sub.3-xSiN(R.sup.2).sub.2[1]