Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The substrate cleaning composite includes an etching compound that provides a component for treating a substrate, and a solvent that dissolves the etching compound, wherein the substrate cleaning composite is an anhydrous composite that does not include water.

A method for processing a substrate is disclosed. The method includes delivering a solvent to a processing chamber and delivering a substrate to the processing chamber. The amount of solvent present in the processing chamber may be configured to submerse the substrate. Liquid CO.sub.2 may be delivered to the processing chamber and the liquid CO.sub.2 may be mixed with the solvent. Additional liquid CO.sub.2 may be delivered to the processing chamber in an amount greater than a volume of the processing chamber to displace the solvent. The liquid CO.sub.2 may be phase transitioned to supercritical CO.sub.2 in the processing chamber and the substrate may be dried by isothermally depressurizing the processing chamber and exhausting gaseous CO.sub.2 from the processing chamber.

Provided is a method for directed fouling of a substance onto a selected surface. Also provided is an apparatus suitable for directed fouling of a substance onto a selected surface.

A process for cleaning a reactor, the reactor comprising a shell including catalyst for selectively converting hydrocarbons. The process includes removing catalyst from the reactor and deploying a robot into the reactor. A cleaner from the robot is applied onto a surface within the shell of the reactor that includes a foulant. The cleaner is adapted to remove the foulant from the surface within the shell of the reactor. The cleaner may be one of light radiation, heat radiation, ultra-high pressure fluid, and liquid nitrogen.

Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

A glove box for handling harmful material is formed to be lightweight and modular in design, allowing for use in the field and various remote locations where a full laboratory is not available. The tank portion of the glove box is formed of a rigid, lightweight plastic and includes a number of standard-sized passageways for connecting other components (intake filter, exhaust filter, input/output containers, gasketed gloves, etc), allowing for modularity in its configuration. The top portion of the glove box may include a transparent window for viewing the material within the glove box. Filter components utilize HEPA filter elements and a separate, portable power supply is used to control a vacuum fan included in an exhaust filter. The power supply can also be used to perform diagnostic tests on the glove and may include a battery back-up.

Disclosed is a supercritical-state cleaning system, comprising a cleaning chamber, a gas booster apparatus, a first heating apparatus, and a carbon dioxide supply apparatus. The cleaning chamber is separately connected to the first heating apparatus and the carbon dioxide supply apparatus. A vacuum pump set is connected to the cleaning chamber. Compared with the prior art, in the Invention, air introduced when a workpiece enters a cleaning chamber is completely removed, so as to prevent mixing of CO.sub.2 and air, thereby improving a cleaning effect.

A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

Embodiments described herein relate to a cleaning device and methods for cleaning an object. In one embodiment, the object is cleaned by moving a clean head along a surface of the object. Supercritical carbon dioxide fluid is delivered by supercritical carbon dioxide fluid vessel to the surface of the object. The supercritical carbon dioxide fluid and contamination material are removed from the object by a vacuum pump to a detector. One or more measurements of the contamination material are determined by the detector. Samples of the contamination material are collected by a collector. A contamination level of the surface of the object is determined by an analyzer.

A material removal method comprises receiving a component that includes a component body and a coating on the component body, the component body comprising metallic first material, and the coating comprising a second material that is different from the first material, wherein the component is a component of an item of rotational equipment. The method also includes receiving a solution comprising nitric acid and hydrogen peroxide and subjecting at least a portion of the coating to the solution in supercritical condition in order to remove at least some of the second material from the component, wherein a chemistry of the solution is selected such that the solution is substantially non-reactive with the first material.