The present disclosure provides a method and a cleaning apparatus for cleaning semiconductor wafers. The cleaning apparatus includes a plurality of cleaning tanks, a dipping tank, a first robot hand, a second robot hand, and at least one drying chamber. The plurality of cleaning tanks is configured to clean a plurality of wafers held by a cassette by cleaning agents. The plurality of wafers is cleaned in the plurality of cleaning tanks through a batch process. The dipping tank is configured to rinse the plurality of wafers by a replacement agent. The at least one drying chamber is configured to dry the wafer taken by the second robot hand with single wafer process.

An apparatus and a method for cleaning a chamber are provided. A method for cleaning a chamber having a treatment space for treating a substrate includes cleaning the chamber by supplying a cleaning medium into the treatment space. The cleaning medium includes a supercritical fluid having a non-polar property and an organic solvent having a polar property. The cleaning efficiency of the chamber is improved with respect to a non-polar contaminant and a polar contaminant.

Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a container body, and a holding member that conveys the substrate from an outside of the container body into the container body and holds the substrate inside the container body during the processing. A substrate support pin supporting a wafer and a cooling plate cooling the holding member are provided outside the container body.

Disclosed is a substrate processing apparatus including a dry processing unit and a controller. The dry processing unit includes: a chamber that accommodates the substrate; a supercritical processing liquid supply unit that supplies a supercritical processing liquid to the substrate; a heating unit that heats an inside of the chamber; and a discharge unit that discharges a fluid in the chamber from the chamber. The controller controls the supercritical processing liquid supply unit, the heating unit, and the discharge unit such that the supercritical processing liquid is supplied to the substrate before or after the substrate is accommodated in the chamber, the inside of the chamber is heated to change the supercritical processing liquid into a supercritical fluid or a subcritical fluid, and the supercritical fluid or the subcritical fluid is discharged from the chamber.

Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

A supercritical processing apparatus includes an upper vessel including a first fluid hole formed in a center thereof, and a lower vessel including a second fluid hole formed in a center thereof. A space is defined between the upper and lower vessels and configured to allow a substrate to be placed therein. The upper vessel further includes a first guide portion provided at a lower portion thereof to be gradually inclined downward toward a periphery thereof from the first fluid hole.

Provided is a method for directed fouling of a substance onto a selected surface. Also provided is an apparatus suitable for directed fouling of a substance onto a selected surface.

A substrate treating apparatus is disclosed. The apparatus may include a housing including an upper body and a lower body coupled to each other to define a treatment space, the lower body being provided below the upper body, a supporting unit coupled to the upper body, the supporting unit supporting an edge of a substrate disposed in the treatment space, a fluid supplying unit configured to supply fluid into the treatment space, a sealing member provided between and in contact with the upper and lower bodies, the sealing member hermetically isolating the treatment space from an outer space, and an isolation plate installed between the sealing member and the supporting unit. The isolation plate may be provided to face the sealing member.

The present invention comprises device (10) which maintains a modified atmospheric pressure within, uses evaporation and condensation by means of heated or cooled fluid jackets and radiators to move and clean washing fluid and fans to increase and decrease the pressure of the gaseous washing fluid in a manner which causes liquid washing fluid to flow laminar within the extraction chamber. The present invention comprises a modular extraction chamber (42) which when fitted to the device (10) is in permanent communication with a boiling chamber (27) and a condensation chamber (33). These chambers are intermittently in communication with an evaporation chamber (12) and a corresponding clean solvent holding chamber (20). The evaporation chamber and the clean solvent holding tank may, upon completion of the extraction cycle sequester the pressurized washing fluid while the rest of the system is depressurized allowing for quick changeover of source material.

An injecting assembly includes a nozzle that is formed with a mixture channel, a mixture opening communicating with the mixture channel, a shaper channel, and a shaper opening communicating with the shaper channel. A mixture of a precursor and a supercritical fluid (SCF) passes through the mixture channel. Waves of the mixture are periodically injected toward a surface of a substrate at the mixture opening. A stream of a shaping fluid flows through the shaper channel and is injected toward the substrate at the shaper opening. The stream of the shaping fluid confines the waves of the mixture. Molecules of the precursor penetrate into the substrate by impact of the wave fronts reaching the surface of the substrate. The molecules of the precursor can react with molecules of a material of the substrate to improve surface properties of the substrate.