A dual phase re-circulating extraction apparatus comprises at least one extraction vessel, at least one separation chamber, and a circulation conduit configured to direct a process fluid into the extraction vessel, where it may come into contact with a source material to form a mixture, and is then passed to the separation chamber, where the process fluid separates from the extracted material, and the process fluid is recirculated back to the extraction vessel. The apparatus includes a gas pump, at least one heat exchanger, and a liquid pump, each connected to the conduit, to efficiently convert a relatively low pressure gas after separation to a relatively high pressure liquid or supercritical fluid for extraction. The apparatus can be configured to enable a batch mode process allowing continuous flow to the separators while the extractors are cycled online and offline in a sequence to enable servicing and reloading.

Disclosed is a supercritical-state cleaning system, comprising a cleaning chamber (4), a gas booster apparatus (11), a first heating apparatus (5), and a carbon dioxide supply apparatus. The cleaning chamber (4) is separately connected to the first heating apparatus (5) and the carbon dioxide supply apparatus. A vacuum pump set (1) is connected to the cleaning chamber (4). Compared with the prior art, in the Invention, air introduced when a workpiece enters a cleaning chamber is completely removed, so as to prevent mixing of CO.sub.2 and air, thereby improving a cleaning effect.

Disclosed is a substrate processing apparatus including a dry processing unit and a controller. The dry processing unit includes: a chamber that accommodates the substrate; a supercritical processing liquid supply unit that supplies a supercritical processing liquid to the substrate; a heating unit that heats an inside of the chamber; and a discharge unit that discharges a fluid in the chamber from the chamber. The controller controls the supercritical processing liquid supply unit, the heating unit, and the discharge unit such that the supercritical processing liquid is supplied to the substrate before or after the substrate is accommodated in the chamber, the inside of the chamber is heated to change the supercritical processing liquid into a supercritical fluid or a subcritical fluid, and the supercritical fluid or the subcritical fluid is discharged from the chamber.

A system for processing objects to be cleaned that includes a processing vessel, and a storage vessel that includes an upper section for storing clean liquid and a lower section for storing dirty liquid. The upper section and lower section are in flow communication.

An integrated approach for cleaning an active surface of a petrochemical sensor. Sensors in the petrochemical industry are often deployed in locations where they are prone to fouling. By heating the active surface fouling substances may be removed from the active surface. Heating the surface above a supercritical point of a fluid being sensed may create a fluid that may serve to clean the active surface. Limiting the duration of the applied heating and/or pulsing the heating may mitigate adverse effects of use of high temperatures. A doped active surface, such as a doped diamond window may be designed to have conductive areas in the window that may be used for resistive heating of the window.

A glove box for handling harmful material is formed to be lightweight and modular in design, allowing for use in the field and various remote locations where a full laboratory is not available. The tank portion of the glove box is formed of a rigid, lightweight plastic and includes a number of standard-sized passageways for connecting other components (intake filter, exhaust filter, input/output containers, gasketed gloves, etc), allowing for modularity in its configuration. The top portion of the glove box may include a transparent window for viewing the material within the glove box. Filter components utilize HEPA filter elements and a separate, portable power supply is used to control a vacuum fan included in an exhaust filter. The power supply can also be used to perform diagnostic tests on the glove and may include a battery back-up.

At least one device (1) and at least one method for removing a layer (22) from a substrate (20) by applying a pulsed high voltage are disclosed. For this purpose, at least one pressure plasma burner (2) operating at atmospheric-pressure, a high-voltage source (3), and a supply of process gas (4) are required. Via a gas line (10), the supply of process gas (4) is connected with an inlet (6) of the plasma burner (2). The plasma burner (2) has a nozzle (7) through which a plasma jet (8) emerges. The high-voltage source (3) is configured such that a pulsed high voltage is applied between the plasma burner (2) and an electrically conductive element (11), which pulsed high voltage reaches a breakdown voltage in the region (29) of the conductive element (11).

A substrate processing apparatus 1 includes a drying processing unit 17, a drain line L2, an acquisition device 75 and a determination unit 19C. The drying processing unit 17 is configured to perform, by bringing a supercritical fluid into contact with a substrate having a surface wet by a liquid to replace the liquid with the supercritical fluid, a drying processing on the substrate. The drain line L2 is provided in the drying processing unit 17, and configured to drain the fluid from the drying processing unit 17. The acquisition device 75 is provided on the drain line L2, and configured to acquire optical information upon the fluid drained from the drying processing unit 17. The determination unit 19C is configured to detect presence or absence of the liquid within the drying processing unit 17 based on the optical information acquired by the acquisition device 75.

A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

A substrate processing apparatus includes first processors, second processors, a transfer module and a controller. Each of the first processors is configured to perform a first processing on a substrate. Each of the second processors is configured to perform a second processing on the substrate on which the first processing is performed. The transfer module is configured to transfer the substrate to the first processors and the second processors. The controller is configured to control the first processors, the second processors and the transfer module. The controller controls a start timing for a first transfer processing of transferring the substrates to the first processor such that a timing of a second transfer processing of transferring the substrate having a liquid film formed thereon to the second processor from the first processor and a timing when another substrate is transferred by the transfer module are not overlapped with each other.