Included are methods and systems for recycling a gas emitted from non-aqueous cleaning. An example method includes contacting a contaminated equipment with a non-aqueous cleaning material; wherein the spent non-aqueous cleaning material emits the gas. The method further comprises capturing the emitted gas, filtering the emitted gas, and recycling the emitted gas into the non-aqueous cleaning material.

A method for cleaning at least one filter material, in particular a filter material used in the production of a respiratory protection mask (M), comprising the step of subjecting this filter material to a supercritical fluid, preferably supercritical CO.sub.2, with a density of less than 0.3 g/ml.

The disclosure provides a substrate processing apparatus that processes a surface of a substrate with a processing fluid in a supercritical state, in which the substrate is protected from the pressure fluctuation caused by partial vaporization of the processing fluid in the flow path. A substrate processing apparatus which processes a surface of a substrate with a processing fluid in a supercritical state includes a chamber housing provided therein with a processing space capable of housing the substrate and a flow path which receives the processing fluid from outside and guides the processing fluid to the processing space, and a fluid supply part which pressure-feeds the processing fluid to the flow path, wherein a plurality of bent parts which change a flow direction of the processing fluid are provided in the flow path.

An apparatus for treating a substrate includes a process chamber having a treatment space for treating the substrate; a fluid supply unit for supplying fluid to the treatment space, wherein the fluid supply unit includes: a supply pipe connected to the treatment space to supply the fluid to the treatment space; a pump installed in the supply pipe to provide flow pressure to the fluid; a vent line installed between the pump and the process chamber to discharge pressure in the fluid to an outside; a relief valve installed in the vent line to open and close the vent line; and a reservoir installed between the pump and a branch point wherein the vent line branches from the supply pipe, wherein the reservoir has a cross-sectional area larger than a cross-sectional area of a portion of the supply pipe located between the pump and the branch point.

The present invention relates to a process and apparatus to inspect and clean orifices found on extrusion dies, spinnerets and other objects having small holes. Orifices are microscope imaged and digitally measured, and if required the invention performs non-contact orifice cleaning using carbon dioxide dry ice particles.

A processing fluid flows into a processing space SP by way of a flow passage and discharge openings 174, 178 having substantially the same cross-sectional shape as that of a gap space formed in a clearance between a wall surface of the processing space SP and a substrate holder 15. On the other hand, the processing fluid having passed through the processing space SP is discharged to an outside via discharge flow passages 183, 187 after flowing into the buffer space 182, 186 having substantially the same width as the gap space. From these, the processing fluid can be caused to flow into the buffer space 182, 186 while the laminar flow state is maintained in the gap space. Thus, the generation of a turbulence in the processing space SP can be suppressed.

Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.

A substrate processing apparatus and a substrate processing method are provided. The substrate processing apparatus includes a chamber having a first housing and a second housing that are combined with each other to form a processing space inside, and a housing actuator that moves the first housing to open or close the processing space. The housing actuator includes a plurality of cylinder units coupled to the first housing, a fluid supplier that supplies a fluid for operating the plurality of cylinder units, and a deviation corrector that corrects an operation deviation between the plurality of cylinder units. The deviation corrector corrects the operation deviation between the plurality of cylinder units coupled to the chamber, thereby minimizing particles that are generated when the chamber is opened/closed.

A substrate processing apparatus includes a base portion 1541 that is disposed in a manner of being adjacent to a chamber; a hand 155 that holds a substrate S; an arm 1542 that is attached to the base portion 1541, supports the hand, and moves the hand forward and rearward by horizontally moving the hand with respect to the base portion; and a cover portion 156 that accommodates the hand in an internal space. The cover portion has a cover main body 1561 forming the internal space and an extending member 1562 having a hollow structure which penetrates the cover portion in a horizontal direction and of which one end serves as an opening 1562a and being engaged with the cover main body in a state of being movable in the horizontal direction while the opening communicates with the internal space.

A method for drying a wafer at room temperature includes a cleaning step, a reacting step and a pressure releasing step. The cleaning step includes putting a processing workpiece into a cleaning solvent. The reacting step includes putting the processing workpiece along with the cleaning solvent into a reaction chamber, implanting a supercritical fluid into the reaction chamber, and increasing a pressure of the reaction chamber to dissolve the cleaning solvent in the supercritical fluid. A critical temperature of the supercritical fluid is below room temperature. The pressure releasing step includes releasing the pressure of the reaction chamber and discharging the supercritical fluid together with the cleaning solvent out of the reaction chamber, after completely dissolving the cleaning solvent in the supercritical fluid.