The disclosure provides a substrate processing apparatus that processes a surface of a substrate with a processing fluid in a supercritical state, in which the substrate is protected from the pressure fluctuation caused by partial vaporization of the processing fluid in the flow path. A substrate processing apparatus which processes a surface of a substrate with a processing fluid in a supercritical state includes a chamber housing provided therein with a processing space capable of housing the substrate and a flow path which receives the processing fluid from outside and guides the processing fluid to the processing space, and a fluid supply part which pressure-feeds the processing fluid to the flow path, wherein a plurality of bent parts which change a flow direction of the processing fluid are provided in the flow path.

The disclosure discloses a sprue spreader surface treatment method, which comprises the following steps: preheating the sprue spreader, and carrying out laser scanning on the sprue spreader by using a laser; cleaning the surface of the sprue spreader, drying it by hot air, and polishing the surface to be bright by pneumatic polishing; and cleaning the surface of the sprue spreader again and drying it by hot air, so that the operation is simple, the cost is low, the bonding strength is high, the energy is saved, the environment is protected, and the service life of the sprue spreader can be prolonged.

A substrate processing apparatus includes: a processing container including a processing space capable of accommodating a substrate in a state where a surface of the substrate is wet by a liquid; a processing fluid supply that supplies a processing fluid in a supercritical state to the processing space toward the liquid; a first exhaust line connected to a first exhaust source; a second exhaust line connected to a second exhaust source and connected to the first exhaust line between the first exhaust source and the processing space; and a controller controlling the second exhaust pressure. The processing fluid in the supercritical state contacts the liquid to dry the substrate, and the controller makes the second exhaust pressure to be higher than the first exhaust pressure during a period in which the processing fluid supply stops supplying the processing fluid to the processing space.

Provided are a wafer cleaning apparatus based on light irradiation capable of effectively cleaning residue on a wafer without damaging the wafer, and a wafer cleaning system including the cleaning apparatus. The wafer cleaning apparatus is configured to clean residue on the wafer by light irradiation and includes: a light irradiation unit configured to irradiate light onto the wafer during the light irradiation; a wafer processing unit configured accommodate the wafer and to control a position of the wafer such that the light is irradiated onto the wafer during the light irradiation; and a cooling unit configured to cool the wafer after the light irradiation has been completed. The light irradiation unit, the wafer processing unit, and the cooling unit are sequentially arranged in a vertical structure with the light irradiation unit above the wafer processing unit and the wafer processing unit above the cooling unit.

A descaling system includes injector arranged to inject cleaning fluid over an inlet for inflow of a fuel-air mixture of an internal-combustion engine and a controller that opens or closes the engine's EGR valve according to parameters of the injected cleaning fluid.

A substrate processing apparatus includes a base portion 1541 that is disposed in a manner of being adjacent to a chamber; a hand 155 that holds a substrate S; an arm 1542 that is attached to the base portion 1541, supports the hand, and moves the hand forward and rearward by horizontally moving the hand with respect to the base portion; and a cover portion 156 that accommodates the hand in an internal space. The cover portion has a cover main body 1561 forming the internal space and an extending member 1562 having a hollow structure which penetrates the cover portion in a horizontal direction and of which one end serves as an opening 1562a and being engaged with the cover main body in a state of being movable in the horizontal direction while the opening communicates with the internal space.

Provided is a substrate cleaning method for cleaning a substrate having an oxide film on the surface thereof. The method includes a partial etching step of etching the oxide film to a predetermined film thickness, and a physical cleaning step of executing physical cleaning on the surface of the substrate after the partial etching step. The oxide film may be a natural oxide film with particles at least partially taken into the film. In this case, the partial etching step may either expose the particles from the natural oxide film or increase the exposed portion from the natural oxide film. The physical cleaning may remove, by physical action, the particles exposed from the natural oxide film while leaving the natural oxide film on the surface of the substrate.

Systems and methods are provided for removing adhesive features. One embodiment is a method for operating a cryogenic-assisted adhesive a removal tool. The method includes dispensing a cryogenic fluid onto an adhesive feature disposed at a surface of a structure, cooling the adhesive feature to cause a physical change making the adhesive feature brittle, and operating the cryogenic-assisted adhesive removal tool to cleave the adhesive feature from the surface while the adhesive feature is physically changed.

A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

Method of cleaning a plasma coating torch utilizing at least one nozzle mounted so as to be directed at the plasma coating torch in order to subject an external surface of the plasma coating torch to a cleaning agent that removes spray material particles which have adhered to the external surface of the plasma coating torch during coating with the plasma coating torch, and such that the cleaning agent exiting the at least one nozzle and being directed toward the external surface and directly changing to a gaseous state from either a solid state or a liquid state.