This new application collects data from indoor and outdoor environments and with that data compiles databases, analyzes that data and finds relationships between pollutants, microbes, matter and diseases in humans, plants and animals. This new application is called the Artificial Intelligence Doctor. The application utilizes artificial intelligence, machine learning and parallel conveyor belts with imbedded microscope slides for the identification and analysis of microbes and matter. The application identifies microbes and matter using static electricity applied to microscope slides imbedded in conveyor belts using light microscopes, electron microscopes, polarized light microscopes, x ray machines, artificial intelligence and machine learning algorithms. The easy transfer conveyor belt system utilizes migration of microbes and microbes from drones and robots for easier identification.

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, one or more pass through chambers, one or more outgassing chambers, a first transfer chamber, a second transfer chamber, and one or more process chambers. The pre-clean chamber and the etch chamber are coupled to a first transfer chamber. The one or more pass through chambers are coupled to and disposed between the first transfer chamber and the second transfer chamber. The one or more outgassing chambers are coupled to the second transfer chamber. The one or more process chambers are coupled to the second transfer chamber.

Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

A method of treating a device to resist formation and build-up of scale deposits at the device is provided. The device is located in a fluid-containing conduit. The method comprises feeding a radio frequency (RF) signal into a line connected to a device located in a fluid-containing conduit; and propagating the RF signal along the line to the device to resist formation and/or build-up of scale deposits at the device. A system for treating a device to resist formation and build-up of scale deposits at the device is also provided. A signal generator operable to generate an RF signal for treating a device to resist formation and build-up of scale deposits at the device is also provided. The signal generator is operable to feed the RF signal into a line connected to the device and to propagate the RF signal along the line to the device to resist formation and/or build-up of scale deposits at the device.

An ultraviolet irradiation device includes a light source that emits light showing light intensity in a first wavelength band of 200 nm to 235 nm and a second wavelength band of 240 nm to 280 nm; an optical filter that suppresses the light intensity in the second wavelength band and has transmittance characteristics according to an incident angle of the light emitted from the light source. A first/second angular distribution of light is obtained from a spectrum for each light distribution angle of the light emitted from the optical filter. The first angular distribution of light has a first angle of a light beam showing maximum intensity, the first angle substantially matching with a second angle of a light beam showing maximum intensity in the second angular distribution of light.

A processing method includes: disposing a workpiece in a processing container of a processing apparatus, and maintaining an inside of the processing container in a vacuum state; providing a cluster nozzle in the processing container; supplying a cluster generating gas to the cluster nozzle and adiabatically expanding the cluster generating gas in the cluster nozzle, thereby generating gas clusters; generating plasma in the cluster nozzle to ionize the gas clusters and injecting the ionized gas clusters onto the workpiece; supplying a reactive gas to the cluster nozzle and exposing the reactive gas to the plasma such that the reactive gas becomes monomer ions or radicals; and supplying the monomer ions or radicals to the processing container, thereby exerting a chemical reaction on a substance present on a surface of the workpiece.

Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.

A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.

The present invention discloses a processing system and processing method for blocked microreactor. The processing system comprises an air intake device, a flushing device, a microreactor to be processed and a plasma processing device. One end of the microreactor to be processed is connected with the air intake device and the flushing device through a pipeline; the other end of the microreactor to be processed is connected with a waste liquid bottle through the pipeline; and the microreactor to be processed is arranged between electrodes of the plasma processing device. The present invention uses the effective reactivity of plasma and active free radicals in an excitation atmosphere to crack micro blockage in a micro channel in a short time. The method of the present invention has high flexibility and strong controllability, and can select plasma electrodes according to blocked regions to crack the blockage in a specific region.