A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

Provided are: a method of producing heated ozone water, the method capable of producing heated ozone water having an extremely high ozone concentration by suppressing a reduction in the ozone concentration in high-concentration heated ozone water; heated ozone water; and a semiconductor wafer-cleaning liquid using the heated ozone water. A method of producing heated ozone water obtained by dissolving ozone in pure water, the method being characterized by including: adjusting a pH of the pure water to 3 or less by adding acid to the pure water; to obtain an acid water, dissolving an ozone gas in the acid water; and heating the pure water, the acid water or the ozone water, to 60° C. or more.

The present invention discloses a photoresist-removing solution comprising of an N-containing compound and an organic substance in a mass ratio of 1:(0.5-150). The N-containing compound includes at least one of the followings: tetraalkylammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water; wherein the tetraalkylammonium hydroxide has the general formula (I): ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 is an alkyl with 1 to 4 carbons, respectively. The organic substance is an organic substance having at least one electron-withdrawing functional group. The present invention mixes a specific kind of N-containing compound and a specific kind of organic substance in a certain ratio, and preferably adds a certain amount of water, so that the removal liquid in the present application has an extremely excellent photoresist-removing effect.

A cleaning device including a disinfection water supply portion to supply cleaning water with a dissolved disinfection component, and a bubble generation portion to contain bubbles into the cleaning water on a downstream side of the disinfection water supply portion.

Provided are a deposition mask cleaning apparatus and a deposition mask cleaning method. The deposition mask cleaning apparatus includes a treated water bath containing treated water in which a deposition mask is immersed; a treated water generation part supplying the treated water to the treated water bath; a treated water supply pipe connecting the treated water bath and the treated water generation part; and a bubble generation part disposed in the treated water supply pipe and generating bubbles in the treated water. The treated water includes at least one of ozone water, hydrogen water, ammonia hydrogen water, and carbonated water. The bubbles include at least one of microbubbles having a bubble diameter of about 50 μm or less and nanobubbles having a bubble diameter of about 1 μm or less.

A method for cleaning a substrate includes receiving a photomask substrate comprising a multilayered reflective structure disposed over a surface of the photomask substrate, a capping layer disposed on the multilayered reflective structure and an absorber, wherein the photomask substrate has a plurality of conductive nanoparticles disposed over the surface; applying a first mixture comprising a SC1 solution, a DI water and O.sub.3 to the photomask substrate to remove the conductive nanoparticles; and applying a DI water to rinse the photomask substrate. A removal rate of the conductive nanoparticles is greater than approximately 90%.

Conventional ozone water is still insufficient in the removal rate and cleaning ability of resist required in today's semiconductor manufacturing field, and it does not fully meet the expectation of further improvement in the effects of sterilization, deodorization, and cleaning in the fields such as cleaning of foodstuffs, cleaning of process equipment and tools, and cleaning of fingers, as well as in the fields such as deodorization, sterilization, and preservation of freshness of foodstuffs. The above problem can be solved by defining the values of a plurality of specific production parameters in the production of ozone water into specific ranges.

A transportable system includes a utility cart with an aqueous ozone solution (AOS) supply unit mounted to the utility cart. The utility cart includes a base with wheels, vertical support members extending from the base, and an upper shelf supported by the vertical support members. The AOS supply unit includes an enclosure coupled to the utility cart between the base and the upper shelf, the enclosure including openings for a water inlet and an aqueous ozone solution outlet. The AOS supply unit further includes one or more ozone generators and a fluid mixer disposed within the enclosure. The fluid mixer is fluidically coupled to the one or more ozone generators and configured to inject ozone generated by the one or more ozone generators into water received from a water source via the water inlet to produce an aqueous ozone solution that is output via the aqueous ozone solution outlet.

An ozone disinfecting system includes a water holding tank configured to hold water for use by the ozone disinfecting system. An ozone generator machine is configured to convert the water into an ozone cleaner agent. An ozone holding tank is configured to hold the ozone cleaner agent created by the ozone generator machine. A drain is configured to drain fluid from the ozone holding tank to the water holding tank. A pump is configured to cycle the fluid from the water holding tank to the ozone generator machine and into the ozone holding tank. A controller is configured to control the pump, the ozone generator machine, and the drain. Wherein, the controller controls the pump, the ozone generator machine and the drain to create the ozone cleaner agent from the water and cycle it between the water holding tank and the ozone holding tank at a specified cycle time.

An apparatus for applying a liquid medium irradiated with UV radiation onto a substrate is disclosed, the apparatus comprising: a housing having an elongated chamber, at least one inlet opening, which opens into the chamber, and at least one slit shaped outlet opening opposite the inlet opening, which extends over the length of the chamber, a tube element, which extends in a longitudinal direction through the chamber, the tube element being at least partially transparent to UV radiation, wherein the tube element is arranged in the chamber such that a flow space is formed between the tube element and the wall of the chamber, the flow space being symmetric with respect to a longitudinal centre plane of the chamber, the longitudinal centre plane dissecting the outlet opening in its middle, and such that the tube element extends into the slit shaped outlet opening in the housing and thereby forms two longitudinally extending outlet slits between the tube element and the housing, and at least one UV-radiation source in the tube element, which is arranged to emit UV-radiation in the direction of the flow space and through the outlet opening out of the housing. The apparatus is distinguished by means for causing UV radiation to be emitted primarily in a first wavelength range through a first section of the tube member into the flow space and for causing UV radiation to be emitted primarily in a second wavelength range through a second section of the tube member through the outlet opening of the housing and optionally into an end region of the flow space adjacent to the outlet slits. The first and second wavelength ranges differ, and wherein for at least one of the sections, a maximum of 20%, preferably a maximum of 5%, of the radiation power emitted through the respective section comes from the other wavelength range.