A method for synthesizing a reagent complex includes a step of ball-milling a mixture that includes: a powder of a zero-valent element; a hydride molecule; and a nitrile ligand. The method produces a reagent complex having a formula Q.sup.0.X.sub.y.L.sub.z, where Q.sup.0 is the zero-valent element, X is the hydride molecule, and L is the nitrile ligand. A process for synthesizing nanoparticles composed of the zero-valent element includes a step of adding solvent to the reagent complex. Crystal texture of the nanoparticles is modulated by appropriate selection of the molar ratio nitrile ligand in the reagent complex.

Provided are metal particles for an adhesive paste, a solder paste composition including the same, and a method of preparing the metal particles for an adhesive paste. The metal particles for an adhesive paste may include a core including one or more metal materials; and a shell arranged on part or an entirety of the core and including one or more metal materials. The metal material of the core may have a melting point higher than that of the metal material of the shell. An intermetallic compound is capable of being formed between the metal material of the core and the metal material of the shell. A ratio (D90/D10) of the 90% cumulative mass particle size distribution (D90 size) to the 10% cumulative mass particle size distribution (D10 size) in a particle size distribution of the metal particles may be 1.22 or less.

A process for preparing alloy products is described using a self-sustaining or self-propagating SHS-type combustion process with point-source ignition, preferably a laser, in a pressurized vessel. Binary, ternary and quaternary alloys can be formed with control over polycrystalline structure and bandgap. Methods to tune the bandgap and the alloys formed are described. The alloy products may be doped. Preferably sulfides, tellurides or selenides are formed. Cooling during reaction takes place.

Provided are thin leaf-like indium particles having a first peak and a second peak at a greater particle diameter than a particle diameter at which the first peak appears in a volume-based particle size distribution representing a relationship between particle diameters of indium particles and ratios by volume of the indium particles at the particle diameters, wherein a volume V1 of the indium particles at the first peak and a volume V2 of the indium particles at the second peak satisfy a formula (V1/V2)×100≥25%.

A transient liquid phase (TLP) composition includes a plurality of first high melting temperature (HMT) particles, a plurality of second HMT particles, and a plurality of low melting temperature (LMT) particles. Each of the plurality of first HMT particles have a core-shell structure with a core formed from a first high HMT material and a shell formed from a second HMT material that is different than the first HMT material. The plurality of second HMT particles are formed from a third HMT material that is different than the second HMT material and the plurality of LMT particles are formed from a LMT material. The LMT particles have a melting temperature less than a TLP sintering temperature of the TLP composition and the first, second, and third HMT materials have a melting point greater than the TLP sintering temperature.

The present disclosure describes radiation-assisted, substrate-free, and solution-based nanostructure (e.g., a nanotube and/or a nanowire (NW)) growth processes. The processes use the high absorption coefficient and high density of free charge carriers in particle seeds (e.g., nanoparticles, metal nanoparticles, and/or metal nanocrystals) to photothermally drive semiconductor nanostructure growth. The processes can be performed at atmospheric pressure, without specialized equipment such as specialized heating equipment and/or high-pressure reaction vessels.

A composite material of Angstrom-scale nanowire arrays in zeolite and its fabrication methods are provided. The zeolite can be prepared by a hydrothermal method and the Angstrom-scale nanowire arrays can be prepared by using zeolite as a template. The zeolite can have porous structures with an average pore size of 0.74 nm and the plurality of nanowires can have an average diameter smaller than 1 nm and can be dispersed on internal or external surfaces of the porous structures. The Angstrom-scale nanowire arrays can be made of aluminum (Al), gallium (Ga), zinc (Zn), or carbon (C). A composite material of the Angstrom-scale aluminum (Al), gallium (Ga), or zinc (Zn) nanowire arrays in zeolite can exhibit characteristics of one-dimensional (1D) superconductor.

Disclosed is a process for producing metal nanowires having a diameter or thickness from 2 nm to 100 nm, the process comprising: (a) preparing a source metal particulate having a size from 50 nm to 500 μm, selected from a transition metal, Al, Be, Mg, Ca, an alloy thereof, a compound thereof, or a combination thereof; (b) depositing a catalytic metal, in the form of nanoparticles or a coating having a diameter or thickness from 1 nm to 100 nm, onto a surface of the source metal particulate to form a catalyst metal-coated metal material, wherein the catalytic metal is different than the source metal material; and (c) exposing the catalyst metal-coated metal material to a high temperature environment, from 100° C. to 2,500° C., for a period of time sufficient to enable a catalytic metal-assisted growth of multiple metal nanowires from the source metal particulate.

A rare-earth magnet and a method of manufacturing the same are provided. The method includes: preparing Sm-Fe-N magnetic powder; preparing reforming material powder containing metallic zinc; mixing the magnetic powder and the reforming material powder to obtain mixed powder; subjecting the mixed powder to compression molding in a magnetic field to obtain a magnetic-field molded body; subjecting the magnetic-field molded body to pressure sintering to obtain a sintered body; and subjecting the sintered body to heat treatment. A content proportion of the metallic zinc in the reforming material powder is 10 to 30% by mass with respect to the mixed powder. When a temperature and time in conditions for the heat treatment are defined as x° C. and y hours, respectively, the formulas y≥−0.32x+136 and 350≤x≤410 are met.

A metal particle for joint material includes an intermetallic compound crystal that contains Sn, Cu, Ni and Ge, in a basal phase that contains Sn and an Sn—Cu alloy, the metal particle having a chemical composition represented by 0.7 to 15% by mass of Cu, 0.1 to 5% by mass of Ni, 0.001 to 0.1% by mass of Ge and the balance of Sn, the basal phase having a chemical composition represented by 95 to 99.9% by mass of Sn, 5% by mass or less of Cu and 0.1% by mass or less of an inevitable impurity, the intermetallic compound crystal residing in the basal phase so as to be included therein, the metal particle having a particle size of 1 μm to 50 μm, the metal particle containing an orthorhombic crystal structure, and at least parts of the basal phase and the intermetallic compound crystal forming an endotaxial joint.