A cutting insert includes a body having an upper face, a lower face, a plurality of planar flank faces joining the upper and lower faces, and a plurality of curved flank faces joining the plurality of flank faces. A T-land is formed at a downward sloping angle with respect to the upper face. A cutting edge is formed at an intersection of a respective flank face and the T-land. A curved cutting edge is formed at an intersection of a respective curved flank face and the T-land. A micro-channel is formed in one of the flank faces, the curved flank faces and the T-land and proximate one of the cutting edge and the curved cutting edge.

A coated cutting tool includes a substrate and a coating layer formed onto the surface of the substrate. The coating layer contains an outermost layer. The outermost layer contains NbN. The NbN contains cubic NbN and hexagonal NbN. When a peak intensity at a (200) plane of cubic NbN is made I.sub.c, a peak intensity at a (101) plane of the hexagonal NbN is made I.sub.h1, and a sum of peak intensities at a (103) plane and a (110) plane of the hexagonal NbN is made I.sub.h2 in X-ray diffraction analysis, a ratio [I.sub.h1/(I.sub.h1+I.sub.c)] of I.sub.h1 based on a sum of I.sub.c and I.sub.h1 is 0.5 or more and less than 1.0, and a ratio [I.sub.h1/(I.sub.h1+I.sub.h2)] of I.sub.h1 based on a sum of I.sub.h1 and I.sub.h2 is 0.5 or more and 1.0 or less.

A coated cutting tool has a substrate and a coating layer formed onto a surface of the substrate. The coating layer contains a hard layer of a composition represented by (Ti.sub.xM.sub.1-x)N, wherein M represents at least one kind of an element selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Al, Si and Y, and x represents an atomic ratio of a Ti element based on a sum of the Ti element and an M element, and satisfies 0.45≦x≦0.9. Also, an average grain size of grains constituting the hard layer is 200 nm or more and 600 nm or less, and the grains of the hard layer satisfy predetermined conditions.

A method of making a polycrystalline cubic boron nitride (PCBN), material is provided. The matrix precursor powder comprises an aluminium compound. The method comprises mixing matrix precursor powder comprising particles having an average particle size no greater than 250 nm, with between 30 and 40 volume percent of cubic boron nitride (cBN) particles having an average particle size of at least 4 μm, and then spark plasma sintering the mixed particles. The spark plasma sintering occurs at a pressure of at least 500 MPa, a temperature of no less than 1050° C. and no more than 1500° C. and a time of no less than 1 minute and no more than 3 minutes.

Disclosed herein are systems and methods for polishing internal surfaces of apertures in semiconductor processing chamber components. A method includes providing a ceramic article having at least one aperture, the ceramic article being a component for a semiconductor processing chamber. The method further includes polishing the at least one aperture based on flowing an abrasive media through the at least one aperture of the ceramic article, the abrasive media including a polymer base and a plurality of abrasive particles.

A cutting insert has a surface that relates to cutting, the surface comprising cBN sintered material, ceramics, or cermet. The cutting insert comprises: a rake face; a flank face; a chamfer located between the rake face and the flank face; and a cutting edge formed by a ridgeline at which the flank face and the chamfer intersect. The cutting edge comprises a cutting edge portion for push cutting, a cutting edge portion for pull cutting, and a connecting cutting edge portion located between the cutting edge portion for push cutting and the cutting edge portion for pull cutting. In the chamfer located along the cutting edge, the chamfer located along the connecting cutting edge portion has a minimum width.

In one aspect, cutting tools are provided comprising radiation ablation regions defining at least one of refractory surface microstructures and/or nanostructures. For example, a cutting tool described herein comprises at least one cutting edge formed by intersection of a flank face and a rake face, the flank face formed of a refractory material comprising radiation ablation regions defining at least one of surface microstructures and surface nanostructures, wherein surface pore structure of the refractory material is not occluded by the surface microstructures and surface nanostructures.

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 μin.

A cubic boron nitride (cBN)-based composite including about 30-65 vol. % cBN, about 3-30 vol. % zirconium (Zr)-containing compounds, about 0-10 vol. % cobalt-tungsten-borides (Co.sub.xW.sub.yB.sub.z), about 2-30 vol. % aluminum oxide (Al.sub.2O.sub.3), about 0.5-10 vol. % tungsten borides, and less than or equal to about 5 vol. % aluminum nitride (AlN).

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 .Math.in.