B23K1/005

Laser brazed component and method therefor
11130197 · 2021-09-28 · ·

In various examples, a component is for use in an implantable medical device. The component includes a pin including a first material attached to a lead including a second material different from the first material of the pin. At least a portion of the lead includes a channel in which at least a portion of the pin sits, the channel including a channel opening defined at least partially by opposing first and second channel sides extending a channel length. At least a first joint is formed along at least a portion of the first channel side. The first joint includes the second material of the lead deformed to at least partially close the channel opening to retain the pin within the channel to attach the lead to the pin. In some examples, the first material includes molybdenum and the second material includes aluminum.

Lead-free and antimony-free tin solder reliable at high temperatures

A lead-free, antimony-free tin solder which is reliable at high temperatures and comprises up to 10 wt % Ag, up to 10 wt % Bi, up to 3 wt % Cu, other optional additives, balance tin, and unavoidable impurities.

Laser assisted solder bonding of direct conversion compound semiconductor detector

In an embodiment, a method comprises: configuring a direct conversion compound semiconductor sensor over a first surface of a readout integrated circuit, IC, comprising two surfaces, each surface comprising solder material on the surface; illuminating the solder material with an infra-red laser such that the solder material on the readout IC melts and forms solder joints between the readout IC and the direct conversion compound semiconductor sensor; configuring a substrate over a second surface of the readout IC comprising solder material; and illuminating the solder material of the second surface with the infra-red laser such that the solder material on the readout IC melts and electrically connects the readout IC with the substrate. In other embodiments, a high frequency radiation detector and an imaging apparatus are discussed.

METHOD AND LASER ARRANGEMENT FOR FUSING A SOLDER MATERIAL DEPOSIT BY MEANS OF LASER ENERGY
20210220934 · 2021-07-22 ·

The invention relates to a method for fusing a solder material deposit by means of laser energy, in which laser radiation emitted from a first laser source is applied to the solder material deposit in a first application phase by means of a first laser device (11) and laser radiation emitted from a second laser source is applied to the solder material deposit in a second application phase by means of a second laser device (12), said first laser source having a lower laser power than the second laser source, a switch being made from the first application phase to the second application phase by means of a switching device (30) and said switch being triggered by a temperature sensor, by means of which the temperature of the solder material deposit is measured at least during the first application phase.

Methods and apparatuses for reflowing conductive elements of semiconductor devices
11081458 · 2021-08-03 · ·

Methods of reflowing electrically conductive elements on a wafer may involve directing a laser beam toward a region of a surface of a wafer supported on a film of a film frame to reflow at least one electrically conductive element on the surface of the wafer. In some embodiments, the wafer may be detached from a carrier substrate and be secured to the film frame before laser reflow. Apparatus for performing the methods, and methods of repairing previously reflowed conductive elements on a wafer are also disclosed.

INDIRECT LASER BRAZING OF SIC/SIC CMCS FOR MANUFACTURING AND REPAIR

A method of connecting two CMC substrates that includes providing two substrates; placing one substrate approximate to the other substrate, such that at least a portion of the two substrates overlap and define a brazing area; placing a brazing material approximate the brazing area; defining a primary raster pattern that encompasses the brazing area and a portion of the two substrates outside the brazing area; defining a secondary raster pattern that encompasses the brazing area; allowing a laser to scan the primary raster pattern to preheat the brazing area to a temperature below the brazing material's melting point; allowing the laser to scan the secondary raster pattern to heat the brazing area to a temperature that is above the brazing material's melting point; melting and allowing the brazing material to flow within the brazing area; and cooling the brazing area to form a brazed joint connecting the two substrates.

TRANSFER AND BONDING METHOD USING LASER

The present disclosure relates to a transfer and bonding method using a laser. As a plurality of devices or packages are simultaneously transferred onto a substrate from a transfer tape by irradiating a top surface of the transfer tape with a first laser, and the plurality of transferred devices or packages are simultaneously bonded to pads of a substrate by irradiating a top surface of the devices or packages with a second laser, a speed of a transfer and bonding process may be extremely maximized.

LASER BRAZED COMPONENT AND METHOD THEREFOR
20210299786 · 2021-09-30 ·

In various examples, a component is for use in an implantable medical device. The component includes a pin including a first material attached to a lead including a second material different from the first material of the pin. At least a portion of the lead includes a channel in which at least a portion of the pin sits, the channel including a channel opening defined at least partially by opposing first and second channel sides extending a channel length. At least a first joint is formed along at least a portion of the first channel side. The first joint includes the second material of the lead deformed to at least partially close the channel opening to retain the pin within the channel to attach the lead to the pin. In some examples, the first material includes molybdenum and the second material includes aluminum.

Die-Beam Alignment for Laser-Assisted Bonding

A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

BUILD MATERIAL FORMATION

A device for forming spherical particles may include a receiving chamber having a heating portion and a cooling portion. Wire segments may travel in a free fall through the receiving chamber. While falling through the heating portion, wire segments may be heated to form spherical particles in response to exposure to microwave electromagnetic radiation. While falling through the cooling portion, formed spherical particles cool.