One of a first metallic pipe containing a first metal as a main component and a second metallic pipe containing a second metal as a main component includes an expanded-diameter connecting part which is formed at an end part of the one metallic pipe. An inner diameter of the end part is greater than an inner diameter of an adjacent part that is adjacent to the end part. An intermetallic compound layer of the first and second metal is present at an interface of the first and second metal located between a brazing filler metal and the one or the other of the metallic pipes. A thickness of the intermetallic compound layer is configured such that the thickness of an end portion on the side of a base end is smaller than the thickness of an end portion on the side of an open end.

Bulk copper solder is highly desired as a solder compound because it is very electrically conductive and has a high melting point relative to other solders. A composition for a copper solder includes copper(II) oxide powder in the range of 37-53% by mass, silicon carbide (SiC) powder in the range of 8-14% by mass, and a flux in the range of 35%-53% by mass. Energy in the form of microwave energy can be applied to the copper solder to convert the Cu(II)O to Cu, for a Cu product conversion of >93%.

Bulk copper solder is highly desired as a solder compound because it is very electrically conductive and has a high melting point relative to other solders. A composition for a copper solder includes copper(II) oxide powder in the range of 37-53% by mass, silicon carbide (SiC) powder in the range of 8-14% by mass, and a flux in the range of 35%-53% by mass. Energy in the form of microwave energy can be applied to the copper solder to convert the Cu(II)O to Cu, for a Cu product conversion of >93%.

A material joining end effector generally includes a first arm, an optics assembly, a clamp, and a second arm. The first arm elongated along a longitudinal axis. The optics assembly is configured to focus an energy beam. The clamp is movably coupled to the first arm, the clamp being configured to move along a direction substantially parallel to the longitudinal axis. The second arm is rotationally coupled to the first arm, the second arm being configured to rotate relative to the first arm. The clamp is configured to removably couple the optics assembly to the first arm to allow the optics assembly to be decoupled from the first arm.

The present invention relates to a reel-to-reel layer reflow method, which emits a uniformized laser beam, which can easily adjust the emission area, and which is for the purpose of improving productivity. An embodiment of the present invention provides a reel-to-reel layer reflow method comprising the steps of: a) transferring a substrate, which has been wound in a roll type, to one side while unwinding the same; b) forming a solder portion on the substrate; c) seating an emission target element on the solder portion and seating a non-emission target element on the substrate; d) surface-emitting a laser beam to the solder portion, on which the emission target element is seated, such that the emission target element is attached to the substrate; e) inspecting the substrate structure manufactured through said step d); and f) winding the substrate structure in a roll type.

An improved method for forming a capacitor is provided as is a capacitor, or electrical component, formed by the method. The method includes providing an aluminum containing anode with an aluminum oxide dielectric thereon; forming a cathode on a first portion of the aluminum oxide dielectric; bonding an anode lead to the aluminum anode on a second portion of the aluminum oxide by a transient liquid phase sintered conductive material thereby metallurgical bonding the aluminum anode to the anode lead; and bonding a cathode lead to said cathode.

A system for laser bonding of flip chip, and more particularly, to a system for laser bonding of flip chip for bonding a flip chip-type semiconductor chip to a substrate by using a laser beam is provided. According to the system for laser bonding of flip chip of the present disclosure, by performing laser bonding on a substrate while pressurizing semiconductor chips, even semiconductor chips which are bent or likely to bend may be bonded to the substrate without causing poor contact of solder bumps.

A method of selective laser brazing is provided. The method includes providing a powder including a plurality of parent core particles and a plurality of braze particles, setting a temperature of an energy source, applying the energy source to the powder, and allowing the heated powder to solidify. The plurality of parent core particles are fused together by the plurality of braze material into a desired component.

The vehicle roof structure includes: a closely facing section that abuts or is adjacent to a side outer panel; a negative curved-surface section that is positioned more inwards in the vehicle width direction than the closely facing section of the roof panel, and has a recessed face that is indented downwards; and a mounting surface that is formed in the side outer panel at an inner side in the vehicle width direction to downwards of the vehicle towards, and at which the closely facing section abuts or is adjacent, in which an edge, on a side of the roof panel, of the brazing material that has solidified to join the roof panel and the side outer panel is positioned on the negative curved-surface section.

A semiconductor device includes a solder supporting material above a substrate. The semiconductor device also includes a solder on the solder supporting material. The semiconductor device further includes selective laser annealed or laser ablated portions of the solder and underlying solder supporting material to form a semiconductor device having 3D features.