Joining apparatus for joining joining elements onto workpieces, comprising a joining element holding device, which is configured to radially hold a joining element, and comprising a loading pin arrangement, which is configured to slide a joining element axially into a holding position in the joining element holding device, and/or to axially support the joining element during a joining process, wherein the loading pin arrangement has a loading pin, which is slidable by means of a loading pin actuator arrangement in the direction of the joining element holding device. The loading pin arrangement is here designed to variably establish a loading pin stroke of the loading pin between at least two stages, so that in a first stage the loading pin is displaceable less far in the direction of the joining element holding device than in a second stage.

Joining apparatus for joining joining elements onto workpieces, comprising a joining element holding device, which is configured to radially hold a joining element, and comprising a loading pin arrangement, which is configured to slide a joining element axially into a holding position in the joining element holding device, and/or to axially support the joining element during a joining process, wherein the loading pin arrangement has a loading pin, which is slidable by means of a loading pin actuator arrangement in the direction of the joining element holding device. The loading pin arrangement is here designed to variably establish a loading pin stroke of the loading pin between at least two stages, so that in a first stage the loading pin is displaceable less far in the direction of the joining element holding device than in a second stage.

A laser soldering technique prevents generation of scorching of a substrate or heat-susceptible components in the surroundings, residues, etc. A method includes adjusting a height of the laser soldering device 1 to a position at which laser light has a preset irradiation diameter D1 larger than a diameter of a solder droplet S, irradiating the solder droplet S with the laser light to heat the solder droplet S to a temperature at which a flux solvent component volatilizes and a solder powder does not melt; adjusting the height of the laser soldering device to a position at which the laser light has a preset irradiation diameter D2 smaller than the diameter of the solder droplet S, and irradiating the solder droplet S with the laser light to heat the solder droplet S to a temperature at which the solder powder melts, and performing soldering.

A method for forming solder deposits on elevated contact metallizations of terminal faces of a substrate formed in particular as a semiconductor component includes bringing wetting surfaces of the contact metallizations into physical contact with a solder material layer. The solder material is arranged on a solder material carrier. At least for the duration of the physical contact, a heating of the substrate and a tempering of the solder material layer takes place. Subsequently a separation of the physical contact between the contact metallizations wetted with solder material and the solder material layer takes place.

The invention relates to a method for producing a mistuning component. The method comprises the following steps: a) producing a container (34) having at least one chamber (36); b) producing a lid (32, 32′); c) inserting at least one impulse element into the chamber (36); d) joining the lid (32, 32′) and the container (36), wherein joining is carried out by soldering/brazing.

Soldering is performed with a high yield ratio even when extremely-thin wires are joined at an extremely-narrow pitch. Moreover, a bridge between conductive joint portions is reduced. A core wire 41 is placed on a preliminarily-soldered conductive joint portion 2. Then, the conductive joint portions 2 and the core wires 41 are covered with an optically-transparent sheet 30. Thus, the state in which the core wire 41 is placed on the conductive joint portion 2 is held. In this state, the optically-transparent sheet 30 is irradiated with light. A preliminary solder 3 is heated and melted to join the core wire 41 and the conductive joint portion 2 together.

An apparatus for removing a semiconductor chip from a board may include: a laser configured to irradiate the board with a laser beam to heat bumps mounting the semiconductor chip on the board; a picker configured to separate the semiconductor chip from the board; a vacuum portion configured to provide a vacuum to the picker; and an intake. If solder pillars, that are residues of the bumps, are melted by the laser beam, the intake removes the solder pillars using the vacuum provided from the vacuum portion. An apparatus for removing a semiconductor chip from a board may include: a stage configured to support the board on which the semiconductor chip is mounted by bumps; a laser configured to irradiate the board with a laser beam to heat the bumps mounting the semiconductor chip on the board; and a picker configured to separate the semiconductor chip from the board.

Provided is a method for determining a laser irradiation state whereby the output of a laser can be acquired with high accuracy. This method for determining a laser irradiation state determines the irradiation state of a laser irradiated by a laser irradiation device and includes: an output stabilization time acquisition step for acquiring, as an output stabilization time, the time from the start of laser irradiation by the laser irradiation device until the stabilization of the output of the laser; an energy acquisition step for acquiring, after the output stabilization time or longer has elapsed from the start of the laser irradiation by the laser irradiation device, the energy of the laser irradiated by the laser irradiation device in a pre-set prescribed period; a conversion step for converting the acquired energy to the output of the laser irradiated by the laser irradiation device; and a state determination step for determining the irradiation state of the laser on the basis of the converted output of the laser.

A semiconductor device includes an insulating substrate formed by integrating a ceramic base plate and a cooling fin; a multiple of plate interconnection members; and a plurality of semiconductor elements. The one faces of the semiconductor elements are bonded to the ceramic base plate of the insulating substrate with a chip-bottom solder, and the other faces thereof are bonded to the plate-interconnection members with a chip-top solder so that plate interconnection members correspond respectively to the semiconductor elements. The chip-bottom solder and the chip-top solder both contain mainly Sn and 0.3-3 wt. % Ag and 0.5-1 wt. % Cu. This allows the semiconductor device to be reduced in size without impairing heat dissipation.

A semiconductor device includes an insulating substrate formed by integrating a ceramic base plate and a cooling fin; a multiple of plate interconnection members; and a plurality of semiconductor elements. The one faces of the semiconductor elements are bonded to the ceramic base plate of the insulating substrate with a chip-bottom solder, and the other faces thereof are bonded to the plate-interconnection members with a chip-top solder so that plate interconnection members correspond respectively to the semiconductor elements. The chip-bottom solder and the chip-top solder both contain mainly Sn and 0.3-3 wt. % Ag and 0.5-1 wt. % Cu. This allows the semiconductor device to be reduced in size without impairing heat dissipation.