Disclosed is a method for manufacturing an equal-strength steel thin-wall welding component with an aluminum or aluminum-alloy plating, wherein the plating comprises an intermetallic compound alloy layer in contact with the base body and a metal alloy layer on the intermetallic compound alloy layer; the plating is not removed or thinned before or during welding; and by presetting a welding gap and using a carbon-manganese-steel welding wire, a welding process and protective gas for welding, the tensile strength of a welding seam of the welding component after hot stamping processing is greater than the tensile strength of a base metal, and the elongation of a welded joint is greater than 4% Further disclosed are a welding wire for welding and an equal-strength steel thin-wall welding component with an aluminum or aluminum-alloy plating.

The present disclosure relates to an apparatus for modifying a curvature of a thin plate optic using controlled heat and densification of portions of the optic. In one embodiment the system has a support structure for supporting the optic about a perimeter thereof, a laser configured to generate a beam having a predetermined energy, and the beam being directed at one surface of the optic. The beam heats and densifies portions of the optic to create a force on the optic. The force induces a stress produces a controlled deformation of the optic. The controlled deformation at least one of modifies a curvature of, or corrects a defect in, the optic.

The invention discloses a laser engraving machine, comprising a casing, a processing platform, a laser engraving head, a laser emitter, and a red light projector, the platform is disposed in the casing, and has a lateral moving trajectory and a longitudinal moving trajectory; the longitudinal trajectory is disposed on one side of the platform, the lateral trajectory is spanned thereon; one end of the lateral trajectory is connected with the longitudinal trajectory, the other is engaged with the platform side; the head is disposed on the lateral trajectory and can move along it. The invention has reasonable structure and convenient use. By adding a working panel, the device can process hard and soft material products, meeting more requirements; by changing the external fan to the built-in fan and smoke exhaust chamber, the installation is simple, the exhaust effect is better, while the proportion of damage during transportation is reduced.

Disclosed is a different-strength steel welding component with an aluminum or aluminum-alloy plating formed by means of butt welding of a high-strength steel plate and a low-strength steel plate, and each of the high-strength steel plate and the low-strength steel plate comprises a base body and at least one pure aluminum or aluminum-alloy plating on a surface of the base body. The tensile strength of a welding seam of the welding component after hot stamping is greater than the tensile strength of a low-strength steel base metal, and the elongation is greater than 4%, such that application requirements of the welding component in the field of automobile hot stamping are met. The present disclosure also relates to a method for manufacturing a different-strength steel welding component with an aluminum or aluminum-alloy plating and a welding wire used in the method.

A substrate treatment apparatus includes a chamber, a member provided inside the chamber, a light source configured to emit a laser beam, an optical waveguide optically connected to the light source and configured to guide a laser beam emitted from the light source, and an optical system provided at an outer peripheral part of the member, optically connected to the optical waveguide, and configured to condense a laser beam guided by the optical waveguide to a focal feature located around the outer peripheral part.

In a laser irradiation apparatus 1 according to one embodiment, each of first and second flotation units 30a, 30b includes a base 31, and a porous plate 32 bonded to an upper surface of the base 31 by an adhesive layer 34, the base 31 includes a rising portion 312 protruding upward at an outer periphery facing at least the gap, and the porous plate 32 includes a cutout portion 321 configured to fit to the rising portion 312, and the adhesive layer 34 is formed along an inner wall of the rising portion 312 having fitted to the cutout portion 321.

In a laser irradiation apparatus 1 according to one embodiment, each of first and second flotation units 30a, 30b includes a base 31, and a porous plate 32 bonded to an upper surface of the base 31 by an adhesive layer 34, the base 31 includes a rising portion 312 protruding upward at an outer periphery facing at least the gap, and the porous plate 32 includes a cutout portion 321 configured to fit to the rising portion 312, and the adhesive layer 34 is formed along an inner wall of the rising portion 312 having fitted to the cutout portion 321.

An interposer for electrical connection between a CPU chip and a circuit board is provided. The interposer includes a board-shaped base substrate made of glass having a coefficient of thermal expansion ranging from 3.1×10.sup.−6/K to 3.4×10.sup.−6/K. The interposer further includes a number of holes having diameters ranging from 20 μm to 200 μm. The number of holes ranging from 10 to 10,000 per square centimeter. Conductive paths running on one surface of the board extend right into respective holes and therethrough to the other surface of the board in order to form connection points for the chip.

A processing system has: a housing in which an object is housed and that has a part through which light is allowed to pass; an irradiation apparatus that emits a processing beam for processing the object; a first member which an energy beam from the irradiation apparatus that propagates toward an outside of the housing through the part enters; and a second member which the energy beam through the first member enters, the first member reduces an intensity of the energy beam that enter the first member, the second member reduces an intensity of the energy beam that enters the second member from the first member.

Reclamation or recycling of a semiconductor workpiece includes vaporizing the structures and materials deposited, implanted, or formed in or on the substrate with minimally acceptable damage to the crystalline substrate through direct ionic vaporization rather than thermal ablation. The purity of the substrate therefore remains substantially free from heavy metal surface contamination and has a surface roughness that may be polished back to a mirror-like finish using chemical mechanical polishing or lapping processes. The process includes focusing coherent light on a surface of the substrate with a predetermined wavelength, power, pulse width, and pulse rate or number of pulses per unit area that causes direct ionic vaporization of material formed in or on the surface of the substrate up to a predetermined penetration depth. Advantageously, patterned, previously used test, and out of specification wafers may be reclaimed for reuse or recycled without risk of the unintended disclosure of intellectual property.