An element chip manufacturing method including: preparing a semiconductor substrate including a first layer having a first principal surface, and a second layer having a second principal surface, the first layer provided with element regions, a dicing region, and an alignment mark, wherein the first layer includes a semiconductor layer, and the second layer includes a metal layer adjacent to the semiconductor layer; irradiating a first laser beam absorbed in the metal film and passing through the semiconductor layer, from the second principal surface side to a first region corresponding to the mark; imaging the semiconductor substrate from the second principal surface side with a camera, and then calculating a second region corresponding to the dicing region on the second principal surface; irradiating a second laser beam to the second region from the second principal surface side; and dicing the semiconductor substrate into a plurality of element chips.

An element chip manufacturing method including: preparing a semiconductor substrate including a first layer having a first principal surface, and a second layer having a second principal surface, the first layer provided with element regions, a dicing region, and an alignment mark, wherein the first layer includes a semiconductor layer, and the second layer includes a metal layer adjacent to the semiconductor layer; irradiating a first laser beam absorbed in the metal film and passing through the semiconductor layer, from the second principal surface side to a first region corresponding to the mark; imaging the semiconductor substrate from the second principal surface side with a camera, and then calculating a second region corresponding to the dicing region on the second principal surface; irradiating a second laser beam to the second region from the second principal surface side; and dicing the semiconductor substrate into a plurality of element chips.

A semiconductor device, including a semiconductor element, and a first wiring member and a second wiring member bonded to each other and being electrically connected to the semiconductor element. The first wiring member has an irradiation area for receiving irradiation of a laser beam. The semiconductor device also includes a protection member disposed on an area of the second wiring member opposite the irradiation area of the first wiring member, the protection member having a melting point higher than a melting point of at least one of the first wiring member and the second wiring member including the area on which the protection member is disposed.

A semiconductor device, including a semiconductor element, and a first wiring member and a second wiring member bonded to each other and being electrically connected to the semiconductor element. The first wiring member has an irradiation area for receiving irradiation of a laser beam. The semiconductor device also includes a protection member disposed on an area of the second wiring member opposite the irradiation area of the first wiring member, the protection member having a melting point higher than a melting point of at least one of the first wiring member and the second wiring member including the area on which the protection member is disposed.

A medical device component is provided. The medical device component may include a body having a first surface being at least partially formed from a markable material having a first color, the markable material having a characteristic that an area exposed to laser irradiation of a predetermined wavelength of ultraviolet light changes to a second color different from the first color; a film covering at least a portion of the first surface of the body, the film having a transmittance at the predetermined wavelength of ultraviolet light of at least 5%; and a visible mark on the markable material at the first surface of the body covered by the film. The visible mark may include one or more areas of the markable material at the first surface having the second color. Methods of manufacturing the medical device component are also provided.

A system for laser-driven propulsion, system comprising a laser source and a target comprising an accelerating part and a projectile part, the accelerating part comprising a metal layer and a porous layer pressed against the metal layer; wherein the laser source is selected to emit pulse beams directed to the metal layer at a fluence below the plasma ablation threshold of the material of the metal layer.

A laser processing apparatus includes a liquid supply mechanism at an upper portion of a holding unit. The liquid supply mechanism includes: a liquid chamber provided with a transparent plate located with a gap formed between the transparent plate and an upper surface of a workpiece held by the holding table; a liquid supply nozzle adapted to supply a liquid to the gap from one side of the liquid chamber; and a liquid discharge nozzle adapted to recover the liquid from the other side of the liquid chamber, to produce a flow of the liquid. A laser beam applying unit includes a condenser adapted to focus a laser beam emitted by a laser oscillator, to apply the laser beam to the workpiece held by the holding table through the transparent plate and the liquid supplied to the gap.

A method for depositing a hardened layer includes sequentially depositing a hardened layer. The hardened layer is formed by spraying a powder material for forming a hardened layer, which is obtained by mixing a first powder containing a Stellite alloy with a second powder containing tungsten carbide, toward a substrate, and melting and solidifying the powder material on/above the substrate. As the hardened layer to be formed is away from the substrate in a deposition direction, at least one of a heat input adjustment step and a content adjustment step is performed. The heat input adjustment step is a step of reducing a heat input for the powder material during formation of the hardened layer. The content adjustment step is a step of increasing a content of the second powder in the powder material for the hardened layer.

A method for depositing a hardened layer includes sequentially depositing a hardened layer. The hardened layer is formed by spraying a powder material for forming a hardened layer, which is obtained by mixing a first powder containing a Stellite alloy with a second powder containing tungsten carbide, toward a substrate, and melting and solidifying the powder material on/above the substrate. As the hardened layer to be formed is away from the substrate in a deposition direction, at least one of a heat input adjustment step and a content adjustment step is performed. The heat input adjustment step is a step of reducing a heat input for the powder material during formation of the hardened layer. The content adjustment step is a step of increasing a content of the second powder in the powder material for the hardened layer.

A method for forming a hollow component includes injecting a fluid into an internal cavity of the hollow component to achieve a pressure of the fluid within the internal cavity that is greater than an ambient pressure. The method further includes drilling at least one hole through the hollow component from an external surface of the hollow component to the internal cavity by applying a laser beam to the hollow component with a laser generator. The method further includes directing the fluid from the internal cavity and through the at least one hole so as to exit the hollow component via the at least one hole.