A method for forming a hollow component includes injecting a fluid into an internal cavity of the hollow component to achieve a pressure of the fluid within the internal cavity that is greater than an ambient pressure. The method further includes drilling at least one hole through the hollow component from an external surface of the hollow component to the internal cavity by applying a laser beam to the hollow component with a laser generator. The method further includes directing the fluid from the internal cavity and through the at least one hole so as to exit the hollow component via the at least one hole.

Disclosed herein are methods of bonding a multi-layer film to a substrate and resulting structures thereof. A method of laser bonding a multi-layer film to a substrate can include forming a film over a first surface of a first substrate that is transmissive to light at a first wavelength. The film may include a reflective layer that is reflective to light at the first wavelength and a refractive layer that is refractive to light at the first wavelength. The method may include irradiating a region of the film using laser radiation passing through the first substrate. A wavelength profile of the laser radiation can have a peak at about the first wavelength. The first wavelength can be between about 300 nm and about 5000 nm.

Disclosed herein are methods of bonding a multi-layer film to a substrate and resulting structures thereof. A method of laser bonding a multi-layer film to a substrate can include forming a film over a first surface of a first substrate that is transmissive to light at a first wavelength. The film may include a reflective layer that is reflective to light at the first wavelength and a refractive layer that is refractive to light at the first wavelength. The method may include irradiating a region of the film using laser radiation passing through the first substrate. A wavelength profile of the laser radiation can have a peak at about the first wavelength. The first wavelength can be between about 300 nm and about 5000 nm.

A method for manufacturing a check valve unit as a liquid flow path member, in which the liquid flow path member includes, in a flow path direction of ink, a first flow path member constituting one side of a flow path, a second flow path member constituting another side of the flow path, and a check valve including a valve body configured to stop a backflow of the ink in the flow path and a check valve holding member configured to hold the valve body, the method includes a welding step for welding the first flow path member or the second flow path member, and the check valve holding member together, and also welding the first flow path member and the second flow path member together.

A method for manufacturing a check valve unit as a liquid flow path member, in which the liquid flow path member includes, in a flow path direction of ink, a first flow path member constituting one side of a flow path, a second flow path member constituting another side of the flow path, and a check valve including a valve body configured to stop a backflow of the ink in the flow path and a check valve holding member configured to hold the valve body, the method includes a welding step for welding the first flow path member or the second flow path member, and the check valve holding member together, and also welding the first flow path member and the second flow path member together.

Provided are a laser annealing apparatus, a laser annealing method, and a mask with which scan nonuniformity can be decreased. According to the present invention, all or some openings of a plurality of openings are configured so that a partial subregion of a prescribed region is irradiated with laser light. The plurality of openings are configured so that, between prescribed regions irradiated with laser light via a group of openings in one row arranged in a row direction and prescribed regions irradiated with laser light via a group of openings in another row arranged in the row direction, the number of times of laser light radiations in subregions having the same occupying region is the same, and at least two openings of a group of openings arranged in a column direction have different positions or shapes.

Provided are a laser annealing apparatus, a laser annealing method, and a mask with which scan nonuniformity can be decreased. According to the present invention, all or some openings of a plurality of openings are configured so that a partial subregion of a prescribed region is irradiated with laser light. The plurality of openings are configured so that, between prescribed regions irradiated with laser light via a group of openings in one row arranged in a row direction and prescribed regions irradiated with laser light via a group of openings in another row arranged in the row direction, the number of times of laser light radiations in subregions having the same occupying region is the same, and at least two openings of a group of openings arranged in a column direction have different positions or shapes.

A wafer processing method includes a modified layer forming step of applying a laser beam of a wavelength having transmitting property to a wafer with a focusing point of the laser beam positioned inside the wafer at positions corresponding to division lines, thereby to form modified layers, and a back side grinding step of holding the wafer on a chuck table of a grinding apparatus, grinding a back side of the wafer to thin the wafer, and dividing the wafer into individual device chips from cracks that are generated from the modified layers formed inside the wafer along the division lines to the division lines formed on a front side of the wafer. In the modified layer forming step, in a case where triangular chips each having a surface area smaller than the device chips are to be formed, the application of the laser beam is stopped in a region where the triangular chips are to be formed.

A laser marking system for marking a predetermined pattern on a workpiece may include a first light source structured to emit first light at a first wavelength; a second light source structured to emit second light at a second wavelength different from the first wavelength and selected to mark a marking surface of the workpiece; beam shaping optics structured to adjust a focal length of the second light; beam steering optics structured to aim the first laser light and the second laser light; a controller configured to control the first light source to emit the first light at the marking surface of the workpiece and control the beam steering optics to aim the second light so as to mark the marking surface of the workpiece and create the first predetermined pattern; and a camera structured to detect first light reflected from the marking surface and record an image.

A laser marking system for marking a predetermined pattern on a workpiece may include a first light source structured to emit first light at a first wavelength; a second light source structured to emit second light at a second wavelength different from the first wavelength and selected to mark a marking surface of the workpiece; beam shaping optics structured to adjust a focal length of the second light; beam steering optics structured to aim the first laser light and the second laser light; a controller configured to control the first light source to emit the first light at the marking surface of the workpiece and control the beam steering optics to aim the second light so as to mark the marking surface of the workpiece and create the first predetermined pattern; and a camera structured to detect first light reflected from the marking surface and record an image.