Provided is a laser mark printing method and a method of producing a laser-marked silicon wafer that can reduce the machining strain left around dots constituting a laser mark. In a method of printing a laser mark having a plurality of dots on a silicon wafer, the plurality of dots are formed using laser light having a wavelength in the ultraviolet region.

A system for laser-driven propulsion, system comprising a laser source and a target comprising an accelerating part and a projectile part, the accelerating part comprising a metal layer and a porous layer pressed against the metal layer; wherein the laser source is selected to emit pulse beams directed to the metal layer at a fluence below the plasma ablation threshold of the material of the metal layer.

A system for laser-driven propulsion, system comprising a laser source and a target comprising an accelerating part and a projectile part, the accelerating part comprising a metal layer and a porous layer pressed against the metal layer; wherein the laser source is selected to emit pulse beams directed to the metal layer at a fluence below the plasma ablation threshold of the material of the metal layer.

A method for bonding semiconductor substrates includes placing a die on a substrate and performing a heating process on the die and the substrate to bond the respective first connectors with the respective second connectors. Respective first connectors of a plurality of first connectors on the die contact respective second connectors of a plurality of second connectors on the substrate. The heating process includes placing a mask between a laser generator and the substrate and performing a laser shot. The mask includes a masking layer and a transparent layer. Portions of the masking layer are opaque. The laser passes through a first gap in the masking layer and through the transparent layer to heat a first portion of a top side of the die opposite the substrate.

A method for separating a thin glass, in which method the thin glass is progressively heated along a path which forms a parting line, wherein the heating of the glass is realized by way of the energy of at least one energy source within an area of action of the energy source on the thin glass, and, by way of a temperature gradient of the glass heated by way of the at least one energy source in relation to the surrounding glass, a mechanical stress is generated in the glass, by way of which mechanical stress, a crack propagates, following the mechanical stress, along the parting line.

A method for separating a thin glass, in which method the thin glass is progressively heated along a path which forms a parting line, wherein the heating of the glass is realized by way of the energy of at least one energy source within an area of action of the energy source on the thin glass, and, by way of a temperature gradient of the glass heated by way of the at least one energy source in relation to the surrounding glass, a mechanical stress is generated in the glass, by way of which mechanical stress, a crack propagates, following the mechanical stress, along the parting line.

The laser processing apparatus according to this disclosure includes a laser oscillator to generate laser light, a processing table to place a workpiece thereon, the workpiece having a protective sheet on a surface thereof, the protective sheet including a laser light absorbing layer, a laser head to process the workpiece with the laser light, and a control unit to adjust a position of the laser head so that a focal position of the laser light is brought to a position away from the surface of the workpiece toward the laser head, and to control power of the laser light so that marking is provided by causing the laser light absorbing layer to absorb the laser light and thus transforming the inside of the protective sheet.

A protective film applying apparatus includes a protective film forming and cleaning unit for forming a protective film on a surface of a wafer and cleaning the protective film away. A coverage state detector detects a coverage state of the protective film, and a controller determines whether or not the protective film has a film thickness falling within a predetermined range. If the controller decides that the thickness of the protective film does not fall in the predetermined range, the controller operates the protective film forming and cleaning unit to clean away the protective film, performs a pretreating process selected depending on the film thickness on the surface, and operates the protective film forming and cleaning unit to form a protective film again on the surface of the wafer.

A protective film applying apparatus includes a protective film forming and cleaning unit for forming a protective film on a surface of a wafer and cleaning the protective film away. A coverage state detector detects a coverage state of the protective film, and a controller determines whether or not the protective film has a film thickness falling within a predetermined range. If the controller decides that the thickness of the protective film does not fall in the predetermined range, the controller operates the protective film forming and cleaning unit to clean away the protective film, performs a pretreating process selected depending on the film thickness on the surface, and operates the protective film forming and cleaning unit to form a protective film again on the surface of the wafer.

Provided are ceramic cutting methods and equipment: a beam irradiation unit for irradiating a beam of a wavelength absorbed by a pattern formed on an upper surface of a ceramic and partially absorbed by the ceramic; a coolant spraying unit for spraying a coolant onto the ceramic irradiated with the beam, wherein the pattern is removed by heating and cooling the ceramic , and is cut by reducing thermal damage by using the stress caused by the recrystallization of an upper layer or all of the ceramic or the stress generated by the thermal expansion and contraction of the upper layer or the entire ceramic, thereby recrystallizing the ceramic by heating and cooling the ceramic , or cutting the ceramic by heating until the ceramic melts, and cooling to apply thermal stress to the inside of the ceramic, followed by an additional separation process of a ceramic material without loss.