A method of calibrating a control system based on a parametric value of a component. The method includes receiving a current from a component of the control system. The component is communicatively coupled to a controller and has a parametric resistor with a parametric resistance value correlating to a parametric value associated with the component. The method further includes determining the resistance value of the parametric resistor by measuring a parametric voltage rating from the current. The method further includes mapping the resistance value to the parametric value associated with the component. The method further includes generating a calibration data set. The calibration data set is based on calibrating the control system to calibrate for the parametric value. The method further includes transmitting a signal to the component. The signal is based on the calibration data set and is configured to calibrate operation of the component.

A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

Apparatus, systems, and methods for tuning the structure, conductivity, and/or wettability of laser induced graphene for a variety of functions including but not limited to multiplexed open microfluidic environmental biosensing and energy storage devices. Aspects of this invention introduce a one-step, mask-free process to create, pattern, and tune laser-induced graphene (LIG) with a ubiquitous CO2 laser or other laser. The laser parameters are adjusted to create LIG with different electrical conductivity, surface morphology, and surface wettability without the need for post chemical modification. This can be done with a single lasing. By optionally introducing a second (or third, fourth, or more) lasing(s), the LIG characteristics can be changed in just the same one step of using the laser scribing without other machines or sub-systems. One example is a second lasing with the same laser sub-system at low laser power, wherein the wettability of the LIG can be significantly altered. Such films presented unique superhydrophobicity owing to the combination of the micro/nanotextured structure and the removal of the hydrophilic oxygen-containing functional groups. The ability to tune the wettability of LIG while retaining high electrical conductivity and mechanical robustness allows rational design of LIG based on application.

Apparatus, systems, and methods for tuning the structure, conductivity, and/or wettability of laser induced graphene for a variety of functions including but not limited to multiplexed open microfluidic environmental biosensing and energy storage devices. Aspects of this invention introduce a one-step, mask-free process to create, pattern, and tune laser-induced graphene (LIG) with a ubiquitous CO2 laser or other laser. The laser parameters are adjusted to create LIG with different electrical conductivity, surface morphology, and surface wettability without the need for post chemical modification. This can be done with a single lasing. By optionally introducing a second (or third, fourth, or more) lasing(s), the LIG characteristics can be changed in just the same one step of using the laser scribing without other machines or sub-systems. One example is a second lasing with the same laser sub-system at low laser power, wherein the wettability of the LIG can be significantly altered. Such films presented unique superhydrophobicity owing to the combination of the micro/nanotextured structure and the removal of the hydrophilic oxygen-containing functional groups. The ability to tune the wettability of LIG while retaining high electrical conductivity and mechanical robustness allows rational design of LIG based on application.

A semiconductor device includes an active region and a trapping region positioned peripherally with respect to the active region, the trapping region presenting trapping apertures permitting the passage of particles, the trapping apertures being in fluid communication with at least one trapping chamber for trapping the particles. A method for manufacturing the semiconductor devices from one semiconductor wafer presents semiconductor device regions to be singulated along a dicing portion line. The method includes in each semiconductor device region, making a semiconductor device precursor by making or applying at least one active element in an active region, making at least one trapping chamber and making, in a trapping region of the semiconductor device region positioned more peripherally than the active region, trapping apertures in fluid communication with the at least one trapping chamber; and singulating the semiconductor device regions by separating the semiconductor device precursors along the dicing portion lines.

A semiconductor device includes an active region and a trapping region positioned peripherally with respect to the active region, the trapping region presenting trapping apertures permitting the passage of particles, the trapping apertures being in fluid communication with at least one trapping chamber for trapping the particles. A method for manufacturing the semiconductor devices from one semiconductor wafer presents semiconductor device regions to be singulated along a dicing portion line. The method includes in each semiconductor device region, making a semiconductor device precursor by making or applying at least one active element in an active region, making at least one trapping chamber and making, in a trapping region of the semiconductor device region positioned more peripherally than the active region, trapping apertures in fluid communication with the at least one trapping chamber; and singulating the semiconductor device regions by separating the semiconductor device precursors along the dicing portion lines.

A control device for controlling an annealing apparatus that performs laser annealing by causing a laser beam to be incident on a surface of a semiconductor wafer and moving a beam spot of the laser beam on the surface of the semiconductor wafer, the control device making a sweep speed of the beam spot of the laser beam faster than twice a value obtained by dividing a thermal diffusivity of the semiconductor wafer by a thickness of the semiconductor wafer.

A control device for controlling an annealing apparatus that performs laser annealing by causing a laser beam to be incident on a surface of a semiconductor wafer and moving a beam spot of the laser beam on the surface of the semiconductor wafer, the control device making a sweep speed of the beam spot of the laser beam faster than twice a value obtained by dividing a thermal diffusivity of the semiconductor wafer by a thickness of the semiconductor wafer.

A laser-processing apparatus for forming features in a workpiece includes at least one sensor for generating process control data representing a) at least one characteristic of the apparatus either before, during or after the workpiece is processed to form a set of features, b) at least one characteristic of the workpiece either before, during or after the workpiece is processed to form a set of features, and/or c) at least one characteristic of an ambient environment in which the apparatus is located either before, during or after the workpiece is processed to form a set of features. A controller executes, or facilitate execution of, a candidate feature selection process whereby process control data is processed to estimate whether any of the features formed in the workpiece are defective and the location of any feature estimated to be defective is identified.