A laser processing head includes: a housing; an entrance portion; an adjustment portion; and a condensing portion. A distance between a third wall portion and a fourth wall portion facing each other in a second direction is shorter than a distance between a first wall portion and a second wall portion facing each other in a first direction. The housing is configured to be attached to an attachment portion of a laser processing apparatus, with at least one of the first wall portion, the second wall portion, the third wall portion, and a fifth wall portion disposed on the side of the attachment portion. The condensing portion is disposed on a sixth wall portion, and is offset toward the fourth wall portion in the second direction.

A method for manufacturing a substrate with a transparent conductive film, includes emitting subnano-to-nanosecond laser light to a transparent conductive film formed on a surface of a substrate to form a laser-induced periodic surface structure having a corrugated shape in at least a part of the transparent conductive film.

Apparatuses and methods are described for laser annealing of a qubit device using a plurality of optical beams. According to an embodiment, a method of tuning a qubit device can comprise generating an optical beam, splitting the optical beam in a plurality of optical beams, and annealing a Josephson junction of the qubit device by projecting the plurality of optical beams onto a region of the qubit device adjacent to the Josephson junction. The disclosed techniques can also be applied for annealing other types of electrical components of various microscale integrated circuit devices.

Apparatuses and methods are described for laser annealing of a qubit device using a plurality of optical beams. According to an embodiment, a method of tuning a qubit device can comprise generating an optical beam, splitting the optical beam in a plurality of optical beams, and annealing a Josephson junction of the qubit device by projecting the plurality of optical beams onto a region of the qubit device adjacent to the Josephson junction. The disclosed techniques can also be applied for annealing other types of electrical components of various microscale integrated circuit devices.

The present invention enables a layer to be worked to be properly subjected to a correcting process without being affected by the variations in the material of the underlayer or in the film thickness of the layer. A laser repair method for irradiating a defect portion of a multilayer film structure formed on a substrate, and performing a correcting process is provided. The method includes: acquiring an image of a region including the defect portion; and setting a scan range of the laser beam on the image so as to include the defect portion. At the time of scan of the inside of the scan range with the laser beam, at a scanning position at which color information of the image is recognized as that of the defect portion, an output of the laser beam is controlled to be ON or High.

The present invention enables a layer to be worked to be properly subjected to a correcting process without being affected by the variations in the material of the underlayer or in the film thickness of the layer. A laser repair method for irradiating a defect portion of a multilayer film structure formed on a substrate, and performing a correcting process is provided. The method includes: acquiring an image of a region including the defect portion; and setting a scan range of the laser beam on the image so as to include the defect portion. At the time of scan of the inside of the scan range with the laser beam, at a scanning position at which color information of the image is recognized as that of the defect portion, an output of the laser beam is controlled to be ON or High.

A reflow melting system for reflow melting a metal coating on an electrical contact area of a terminal includes a laser head for emitting a laser light onto the metal coating on the terminal to heat and melt the metal coating. A remote control terminal is provided in communication with the laser head for adjusting at least one working parameter of the laser head for optimizing the melting effect of the metal coating.

The present technology relates to an electrode manufacturing method, an electrode manufactured by the method, and a secondary battery comprising same, the electrode manufacturing method comprising a cleaning step performed by laser irradiation, in lines corresponding to each other in a direction perpendicular to an electrode current collector, onto a top-coated electrode mixture layer and a back-coated electrode mixture layer of the electrode current collector, and may prevent a mismatch of the electrode mixture layers and may significantly reduce the degree of sliding occurrence at the boundary region.

A method for filamentation of a dielectric workpiece has a workpiece with a thickness between 0.5 and 20 mm is provided. The workpiece has boundary surfaces delimiting the workpiece. The thickness of the workpiece varies spatially and/or at least one of the boundary surfaces delimiting the workpiece has at least one curvature with a radius of curvature between 0.1 μm and 10 m. The dielectric workpiece can have a specially formed edge.

A method for filamentation of a dielectric workpiece has a workpiece with a thickness between 0.5 and 20 mm is provided. The workpiece has boundary surfaces delimiting the workpiece. The thickness of the workpiece varies spatially and/or at least one of the boundary surfaces delimiting the workpiece has at least one curvature with a radius of curvature between 0.1 μm and 10 m. The dielectric workpiece can have a specially formed edge.