To provide a method for manufacturing an outer panel in which takt time is shortened and of high designability. A method for manufacturing an outer panel performing a hemming process according to the present disclosure includes; performing a laser light irradiation process on an inner side of a steel sheet that serves as an outer panel to bend the steel sheet at a first angle, the laser light being irradiated along a ridgeline of a center part of a bend radius of the steel sheet, and performing the hemming process on the steel sheet at a timing that is after the laser irradiation process to bend the steel sheet at a second angle smaller than the first angle.

A device for fabricating a quartz microfluidic chip by a femtosecond pulse cluster. The device includes: a femtosecond pulse cluster laser source configured to output a femtosecond pulse cluster; a beam splitting and interference system, configured to split the femtosecond pulse cluster into a plurality of parts, and to converge split parts to form a femtosecond pulse cluster plasma or a femtosecond pulse cluster plasma grating; a sample system configured to move the electronic displacement platform where a quartz glass is placed to control a position where the parts of the femtosecond pulse cluster are converged on the quartz glass; and a hydrofluoric acid immersion system configured to immerse the quartz glass in a diluent hydrofluoric acid solution to remove an ablated part of the quartz glass to form the quartz microfluidic chip.

A device for fabricating a quartz microfluidic chip by a femtosecond pulse cluster. The device includes: a femtosecond pulse cluster laser source configured to output a femtosecond pulse cluster; a beam splitting and interference system, configured to split the femtosecond pulse cluster into a plurality of parts, and to converge split parts to form a femtosecond pulse cluster plasma or a femtosecond pulse cluster plasma grating; a sample system configured to move the electronic displacement platform where a quartz glass is placed to control a position where the parts of the femtosecond pulse cluster are converged on the quartz glass; and a hydrofluoric acid immersion system configured to immerse the quartz glass in a diluent hydrofluoric acid solution to remove an ablated part of the quartz glass to form the quartz microfluidic chip.

A glass substrate for a semiconductor package includes a first principal surface, a second principal surface, at least one hollowed-out portion, and at least one through hole formed in a surrounding of the at least one hollowed-out portion, wherein in a section of the at least one hollowed-out portion taken in a direction perpendicular to the first principal surface, a minimum diameter of the at least one hollowed-out portion is smaller than an opening diameter of the at least one hollowed-out portion at each of the first principal surface and the second principal surface.

A glass substrate for a semiconductor package includes a first principal surface, a second principal surface, at least one hollowed-out portion, and at least one through hole formed in a surrounding of the at least one hollowed-out portion, wherein in a section of the at least one hollowed-out portion taken in a direction perpendicular to the first principal surface, a minimum diameter of the at least one hollowed-out portion is smaller than an opening diameter of the at least one hollowed-out portion at each of the first principal surface and the second principal surface.

In various embodiments, cold-start times and performance of wavelength-beam-combining laser resonators are improved via adjustment of the operating wavelengths and/or temperature of beam emitters within the resonators.

In various embodiments, cold-start times and performance of wavelength-beam-combining laser resonators are improved via adjustment of the operating wavelengths and/or temperature of beam emitters within the resonators.

A colored sapphire material and methods for coloring sapphire material using lasers are disclosed. The method for coloring the sapphire material may include positioning the sapphire material over an opaque substrate material, exposing the opaque substrate material to a laser beam passing through the sapphire material to impact the substrate material, and inducing a chemical change in a portion of the sapphire material exposed to the laser beam. The method may also include creating a visible color in the portion of the sapphire material as a result of the chemical change. The colored sapphire material may include a first transparent portion, and a second, colored portion substantially surrounded by the first portion. The second, colored portion may have a chemical composition different than that of the first portion.

A colored sapphire material and methods for coloring sapphire material using lasers are disclosed. The method for coloring the sapphire material may include positioning the sapphire material over an opaque substrate material, exposing the opaque substrate material to a laser beam passing through the sapphire material to impact the substrate material, and inducing a chemical change in a portion of the sapphire material exposed to the laser beam. The method may also include creating a visible color in the portion of the sapphire material as a result of the chemical change. The colored sapphire material may include a first transparent portion, and a second, colored portion substantially surrounded by the first portion. The second, colored portion may have a chemical composition different than that of the first portion.

A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.