Patent classifications
B23K26/50
ELECTRODE WELDING METHOD AND ELECTRODE WELDING APPARATUS
An electrode welding method includes a laser irradiation apparatus preparation step of preparing a laser irradiation apparatus including a laser oscillator that emits a laser beam with a wavelength having absorbability with respect to a semiconductor chip and a spatial light modulator that adjusts the energy distribution of the laser beam emitted by the laser oscillator, an electrode positioning step of positioning, corresponding to electrodes of a wiring substrate, bump electrodes of a device, and an electrode welding step of irradiating the back surface of the semiconductor chip with the laser beam and welding the bump electrodes to the electrodes of the wiring substrate.
HYBRID BONDING INTERCONNECTION USING LASER AND THERMAL COMPRESSION
In one example, a method to manufacture a semiconductor device comprises providing an electronic component over a substrate, wherein an interconnect of the electronic component contacts a conductive structure of the substrate, providing the substrate over a laser assisted bonding (LAB) tool, wherein the LAB tool comprises a stage block with a window, and heating the interconnect with a laser beam through the window until the interconnect is bonded with the conductive structure. Other examples and related methods are also disclosed herein.
Method for separating thin layers of solid material from a solid body
Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.
Method for separating thin layers of solid material from a solid body
Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.
PROCESSING SYSTEM AND PROCESSING METHOD
A processing system has: an irradiation optical system irradiating an object with an energy beam from a light source; an object placing apparatus on which the object is placed; a light receiving apparatus that is disposed at the object placing apparatus and that optically receives the energy beam from the irradiation optical system; and a measurement apparatus that measures at least one of the light receiving apparatus and a part that is related to the light receiving apparatus. The processing system moves the object placing apparatus to a position at which the light receiving apparatus optically receives the energy beam and moves the object placing apparatus to a position at which the measurement apparatus measures a position of the light receiving apparatus. .
PROCESSING SYSTEM AND PROCESSING METHOD
A processing system has: an irradiation optical system irradiating an object with an energy beam from a light source; an object placing apparatus on which the object is placed; a light receiving apparatus that is disposed at the object placing apparatus and that optically receives the energy beam from the irradiation optical system; and a measurement apparatus that measures at least one of the light receiving apparatus and a part that is related to the light receiving apparatus. The processing system moves the object placing apparatus to a position at which the light receiving apparatus optically receives the energy beam and moves the object placing apparatus to a position at which the measurement apparatus measures a position of the light receiving apparatus. .
Laser processing method and laser processing system
A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.
MARKING PROCESS OF AN OBJECT AND RELATED MARKING APPARATUS
A marking process of an object comprising providing a processing device/unit/member/circuit having a word processing software and a display and operationally connected to an apparatus for the marking of an object having a marking head, entering one data by the word processing software suitable for being engraved on an object, switching on a detecting device/unit/member/circuit which are positioned above a work top of the apparatus to receive the object to be marked, positioning the object to be marked above the work top, acquiring an image of the object to be marked and sending it to the word processing software to show it on the display, checking via the display whether the data entered is at least partly superimposed on the image of the object, and starting the marking of the object.
Laser processing apparatus including imager of mark of processed workpiece
A laser processing apparatus includes an unloading/loading mechanism for unloading a wafer from and loading a wafer into a cassette placed on a cassette placing stand, a chuck table for rotatably holding the wafer unloaded from the cassette by the unloading/loading mechanism, an image capturing unit for capturing an image of a wafer, and a control unit. The control unit controls the unloading/loading mechanism to orient a mark indicating the crystal orientation of a processed wafer in a predetermined direction different from a direction in which the mark of an unprocessed wafer in the cassette is oriented, when the unloading/loading mechanism houses the processed wafer into the cassette.
Laser processing apparatus including imager of mark of processed workpiece
A laser processing apparatus includes an unloading/loading mechanism for unloading a wafer from and loading a wafer into a cassette placed on a cassette placing stand, a chuck table for rotatably holding the wafer unloaded from the cassette by the unloading/loading mechanism, an image capturing unit for capturing an image of a wafer, and a control unit. The control unit controls the unloading/loading mechanism to orient a mark indicating the crystal orientation of a processed wafer in a predetermined direction different from a direction in which the mark of an unprocessed wafer in the cassette is oriented, when the unloading/loading mechanism houses the processed wafer into the cassette.