A panel-shaped glass element is provided that includes vitreous material having a thermal expansion coefficient of less than 10×10.sup.-6 K.sup.-1 as well as two opposing surfaces. The glass element furthermore has at least one recess which runs through the glass of the glass element and has a recess wall which runs around the recess and adjoins the two opposing surfaces. The recess wall has a structure with a multiplicity of mutually adjacent rounded dome-shaped depressions. A roughness of the recess wall is formed by these depressions as well as the ridges enclosing the depressions. The recess wall has a mean roughness value (Ra) which is less than 5 .Math.m.

A panel-shaped glass element is provided that includes vitreous material having a thermal expansion coefficient of less than 10×10.sup.-6 K.sup.-1 as well as two opposing surfaces. The glass element furthermore has at least one recess which runs through the glass of the glass element and has a recess wall which runs around the recess and adjoins the two opposing surfaces. The recess wall has a structure with a multiplicity of mutually adjacent rounded dome-shaped depressions. A roughness of the recess wall is formed by these depressions as well as the ridges enclosing the depressions. The recess wall has a mean roughness value (Ra) which is less than 5 .Math.m.

In one example, a method to manufacture a semiconductor device comprises providing an electronic component over a substrate, wherein an interconnect of the electronic component contacts a conductive structure of the substrate, providing the substrate over a laser assisted bonding (LAB) tool, wherein the LAB tool comprises a stage block with a window, and heating the interconnect with a laser beam through the window until the interconnect is bonded with the conductive structure. Other examples and related methods are also disclosed herein.

In one example, a method to manufacture a semiconductor device comprises providing an electronic component over a substrate, wherein an interconnect of the electronic component contacts a conductive structure of the substrate, providing the substrate over a laser assisted bonding (LAB) tool, wherein the LAB tool comprises a stage block with a window, and heating the interconnect with a laser beam through the window until the interconnect is bonded with the conductive structure. Other examples and related methods are also disclosed herein.

A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

Provided is an electrode tab welding method including aligning one end portion of an electrode tab unit including a plurality of electrode tabs protruding from one side or both sides of an electrode assembly in which electrodes and separators are stacked to overlap one end portion of an electrode lead; and irradiating an overlapping area where the electrode tab unit and the electrode lead overlap each other with a laser for welding. Each of the electrode tabs belonging to the electrode tab unit is an ultra-thin electrode tab having a thickness of 15 μm or less, and the number of electrode tabs stacked in one direction in the electrode tab unit is at least 40.

Provided is an electrode tab welding method including aligning one end portion of an electrode tab unit including a plurality of electrode tabs protruding from one side or both sides of an electrode assembly in which electrodes and separators are stacked to overlap one end portion of an electrode lead; and irradiating an overlapping area where the electrode tab unit and the electrode lead overlap each other with a laser for welding. Each of the electrode tabs belonging to the electrode tab unit is an ultra-thin electrode tab having a thickness of 15 μm or less, and the number of electrode tabs stacked in one direction in the electrode tab unit is at least 40.

Laser lift off systems and methods overlap irradiation zones to provide multiple pulses of laser irradiation per location at the interface between layers of material to be separated. To overlap irradiation zones, the laser lift off systems and methods provide stepwise relative movement between a pulsed laser beam and a workpiece. The laser irradiation may be provided by a non-homogeneous laser beam with a smooth spatial distribution of energy across the beam profile. The pulses of laser irradiation from the non-homogenous beam may irradiate the overlapping irradiation zones such that each of the locations at the interface is exposed to different portions of the non-homogeneous beam for each of the multiple pulses of the laser irradiation, thereby resulting in self-homogenization. Thus, the number of the multiple pulses of laser irradiation per location is generally sufficient to provide the self-homogenization and to separate the layers of material.

Laser lift off systems and methods overlap irradiation zones to provide multiple pulses of laser irradiation per location at the interface between layers of material to be separated. To overlap irradiation zones, the laser lift off systems and methods provide stepwise relative movement between a pulsed laser beam and a workpiece. The laser irradiation may be provided by a non-homogeneous laser beam with a smooth spatial distribution of energy across the beam profile. The pulses of laser irradiation from the non-homogenous beam may irradiate the overlapping irradiation zones such that each of the locations at the interface is exposed to different portions of the non-homogeneous beam for each of the multiple pulses of the laser irradiation, thereby resulting in self-homogenization. Thus, the number of the multiple pulses of laser irradiation per location is generally sufficient to provide the self-homogenization and to separate the layers of material.