A process for room temperature substrate bonding employs a first substrate substantially transparent to a laser wavelength is selected. A second substrate for mating at an interface with the first substrate is then selected. A transmissivity change at the interface is created and the first and second substrates are mated at the interface. The first substrate is then irradiated with a laser of the transparency wavelength substantially focused at the interface and a localized high temperature at the interface from energy supplied by the laser is created. The first and second substrates immediately adjacent the interface are softened with diffusion across the interface to fuse the substrates.

A method of additive manufacture is disclosed. The method may include creating, by a 3D printer contained within an enclosure, a part having a weight greater than or equal to 2,000 kilograms. A gas management system may maintain gaseous oxygen within the enclosure atmospheric level. In some embodiments, a wheeled vehicle may transport the part from inside the enclosure, through an airlock, as the airlock operates to buffer between a gaseous environment within the enclosure and a gaseous environment outside the enclosure, and to a location exterior to both the enclosure and the airlock.

A laser processing device includes an irradiation unit configured to irradiate an object with laser light, an image capturing part configured to capture an image of the object, and a control unit configured to control at least the irradiation unit and the image capturing part. A plurality of lines is set in the object. The control unit performs a first process of irradiating the object with the laser light for each of the plurality of lines by control of the irradiation unit to form a modified spot and a fracture extending from the modified spot in the object so as not to reach an outer surface of the object.

A method and apparatus for dicing optical devices from a substrate are described herein. The method includes the formation of a plurality of trenches using radiation pulses delivered to the substrate. The radiation pulses are delivered in a pattern to form trenches with varying depth as the trenches extend outward from a top surface of the optical device. The varying depth of the trenches provides edges of each of the optical devices which are slanted. The radiation pulses are UV radiation pulses and are delivered in bursts around the silhouette of the optical devices.

Methods of determining a polygon ablation pattern for use in mitigating one or more defects in an optical device are described. A method comprises identifying spatial coordinates of one or more defects areas in a first image of the optical device taken when tinted, defining a region of interest around at least one defect area of the one or more defect areas, and determining a polygon boundary around the at least one defect area in the region of interest to define the polygon ablation pattern.

The present invention disclosed a method of producing a three-dimensional porous tissue in-growth structure. The method includes the steps of depositing a first layer of metal powder and scanning the first layer of metal powder with a laser beam to form a portion of a plurality of predetermined unit cells. Depositing at least one additional layer of metal powder onto a previous layer and repeating the step of scanning a laser beam for at least one of the additional layers in order to continuing forming the predetermined unit cells. The method further includes continuing the depositing and scanning steps to form a medical implant.

A method and an apparatus for collecting powder samples in real-time in powder bed fusion additive manufacturing may involves an ingester system for in-process collection and characterizations of powder samples. The collection may be performed periodically and uses the results of characterizations for adjustments in the powder bed fusion process. The ingester system of the present disclosure is capable of packaging powder samples collected in real-time into storage containers serving a multitude purposes of audit, process adjustments or actions.

A method is for manufacturing a stone, in particular for a timepiece, from a mineral body of monocrystalline or polycrystalline type. The method includes an ablation step in which the body is subjected to a material ablation by scanning on at least one face of the body using ultra-short pulse laser radiation whose duration is less than one hundred picoseconds, and whose beam is guided by a precession system having at least three axes to at least partially cancel the angle of the laser cone, which is due to the focusing of the laser. A mineral stone of monocrystalline or polycrystalline type, in particular for a horological movement, is likely to be obtained by the method. The stone includes in particular a face provided with a peripheral rim, in particular for laterally clamping an endstone in a bearing.

An article includes a ceramic material and features a machined surface that is characteristic of cold ablation laser machining, and the machined surface exhibits no visible oxidation. A laser machining apparatus and technique is based on cold-ablation, but is modified or augmented with an inert assist gas, to minimize deleterious surface modifications and mitigate the oxide formation associated with laser machining.

A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold. The energy density satisfies at least one of conditions of a peak value of the energy density is lower than or equal to 44 J/cm.sup.2, a rising rate of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm.sup.3, and a range of depth where the energy density exceeds the reforming threshold is smaller than or equal to 30 μm.