An electrostatic chuck includes a ceramic dielectric substrate and a base plate. The base plate includes a communicating path configured to allow a coolant to pass. The communicating path includes a first flow path part having a pair of side surfaces along a first direction. The first direction is along a flow of the coolant. When viewed along a stacking direction, one side surface of the pair of side surfaces includes a plurality of convex portions and a plurality of concave portions. The plurality of convex portions is convex in a second direction. The second direction is perpendicular to the first direction. The second direction is from the other side surface toward the one side surface of the pair of side surfaces. The plurality of concave portions is convex in an opposite direction of the second direction.

An electrostatic chuck includes a ceramic dielectric substrate and a base plate. The base plate includes a communicating path configured to allow a coolant to pass. The communicating path includes a first flow path part having a pair of side surfaces along a first direction. The first direction is along a flow of the coolant. When viewed along a stacking direction, one side surface of the pair of side surfaces includes a plurality of convex portions and a plurality of concave portions. The plurality of convex portions is convex in a second direction. The second direction is perpendicular to the first direction. The second direction is from the other side surface toward the one side surface of the pair of side surfaces. The plurality of concave portions is convex in an opposite direction of the second direction.

Electrostatic chucks and method for forming the same are described herein. The electrostatic chucks include a backside gas passage having a ceramic porous plug secured therein by a ceramic body of the chuck with a ceramic-to-ceramic body. In one example, ceramic porous plug is sintered with the ceramic body.

Electrostatic chucks and method for forming the same are described herein. The electrostatic chucks include a backside gas passage having a ceramic porous plug secured therein by a ceramic body of the chuck with a ceramic-to-ceramic body. In one example, ceramic porous plug is sintered with the ceramic body.

The present disclosure relates to an electrostatic chuck having an efficient cooling structure. The present disclosure provides an electrostatic chuck including a base substrate including a cooling water channel, and a plate configured to support a wafer on the base substrate and including a plate comprising a cooling gas hole configured to supply a cooling gas to the wafer. The base substrate includes a cooling water inlet and a cooling gas inlet in a center thereof, the plate is in communication with the cooling gas inlet of the base substrate and include a cooling gas hole configured to spray a cooling gas to the wafer, and the electrostatic chuck further includes a shaft abutting the base substrate along a circumference of a central portion of the base substrate including the cooling water inlet and the cooling gas inlet.

The present disclosure relates to an electrostatic chuck having an efficient cooling structure. The present disclosure provides an electrostatic chuck including a base substrate including a cooling water channel, and a plate configured to support a wafer on the base substrate and including a plate comprising a cooling gas hole configured to supply a cooling gas to the wafer. The base substrate includes a cooling water inlet and a cooling gas inlet in a center thereof, the plate is in communication with the cooling gas inlet of the base substrate and include a cooling gas hole configured to spray a cooling gas to the wafer, and the electrostatic chuck further includes a shaft abutting the base substrate along a circumference of a central portion of the base substrate including the cooling water inlet and the cooling gas inlet.

The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing any one of an RF grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.

An attachment and detachment device that excels in responsiveness to attachment and detachment of a workpiece even when the workpiece is thin while utilizing an electrostatic chuck method is provided. The attachment and detachment device that enables suction and separation of a workpiece includes a machinable ceramic layer, an adhesion activating layer provided on the machinable ceramic layer, an electrode layer provided on the adhesion activating layer, and a dielectric layer provided on the electrode layer, wherein the electrode layer is covered with the adhesion activating layer and the dielectric layer, and the dielectric layer has a volume resistivity of 10.sup.9 to 10.sup.12 Ω.Math.cm.

An attachment and detachment device that excels in responsiveness to attachment and detachment of a workpiece even when the workpiece is thin while utilizing an electrostatic chuck method is provided. The attachment and detachment device that enables suction and separation of a workpiece includes a machinable ceramic layer, an adhesion activating layer provided on the machinable ceramic layer, an electrode layer provided on the adhesion activating layer, and a dielectric layer provided on the electrode layer, wherein the electrode layer is covered with the adhesion activating layer and the dielectric layer, and the dielectric layer has a volume resistivity of 10.sup.9 to 10.sup.12 Ω.Math.cm.

Electrostatic chucks (ESCs) for reactor or plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate having heater elements therein, the ceramic bottom plate composed of alumina having a first purity. The substrate support assembly also includes a ceramic top plate having an electrode therein, the ceramic top plate composed of alumina having a second purity higher than the first purity. A bond layer is between the ceramic top plate and the ceramic bottom plate. The ceramic top plate is in direct contact with the bond layer, and the bond layer is in direct contact with the ceramic bottom plate.