A sample grinder includes a base having a bowl and a rotatable drive plate to operably support a grinding wheel. A head is configured to support a specimen holder and has a first drive for rotational drive of the specimen holder and a second drive for moving the head and specimen holder toward and away from the drive plate. The head has a sleeve that is larger than the specimen holder. A cover is disposed over the bowl and has an opening larger than the sleeve so that the sleeve fits through the opening when the specimen holder is moved toward the rotatable drive plate. The grinding wheel is mountable to the plate in a single radial orientation only. A dressing system is operably connected to a controller to monitor the current of the drive plate motor and/or the head first drive actuates the dressing system based upon the current drawn by the drive plate motor and/or the head first drive motor falling below a predetermined value.

A sample grinder includes a base having a bowl and a rotatable drive plate to operably support a grinding wheel. A head is configured to support a specimen holder and has a first drive for rotational drive of the specimen holder and a second drive for moving the head and specimen holder toward and away from the drive plate. The head has a sleeve that is larger than the specimen holder. A cover is disposed over the bowl and has an opening larger than the sleeve so that the sleeve fits through the opening when the specimen holder is moved toward the rotatable drive plate. The grinding wheel is mountable to the plate in a single radial orientation only. A dressing system is operably connected to a controller to monitor the current of the drive plate motor and/or the head first drive actuates the dressing system based upon the current drawn by the drive plate motor and/or the head first drive motor falling below a predetermined value.

A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

A grinding apparatus includes a loading unit for loading a wafer to a chuck table having a holding surface for holding the wafer, an unloading unit for unloading the wafer from the chuck table, and a cleaning unit for cleaning the holding surface of the chuck table or the upper surface of the wafer held on the holding surface of the chuck table. The cleaning unit includes a cleaning portion and a horizontal moving portion for horizontally moving the cleaning portion in a lateral direction of the grinding apparatus. The loading unit has a first holding portion for holding the wafer, and the unloading unit has a second holding portion for holding the wafer.

A grinding apparatus includes a loading unit for loading a wafer to a chuck table having a holding surface for holding the wafer, an unloading unit for unloading the wafer from the chuck table, and a cleaning unit for cleaning the holding surface of the chuck table or the upper surface of the wafer held on the holding surface of the chuck table. The cleaning unit includes a cleaning portion and a horizontal moving portion for horizontally moving the cleaning portion in a lateral direction of the grinding apparatus. The loading unit has a first holding portion for holding the wafer, and the unloading unit has a second holding portion for holding the wafer.

A machine featuring a treatment tool that grinds a surface to a desired profile, imparts a desired roughness to that surface, and removes contamination from the surface, the machine configured to control multiple independent input variables simultaneously, the controllable variables selected from the group consisting of (i) velocity, (ii) rotation, and (iii) dither of the treatment tool, and (iv) pressure of the treatment tool against the surface. The machine can move the treatment tool with six degrees of freedom.

A machine featuring a treatment tool that grinds a surface to a desired profile, imparts a desired roughness to that surface, and removes contamination from the surface, the machine configured to control multiple independent input variables simultaneously, the controllable variables selected from the group consisting of (i) velocity, (ii) rotation, and (iii) dither of the treatment tool, and (iv) pressure of the treatment tool against the surface. The machine can move the treatment tool with six degrees of freedom.

A machine featuring a treatment tool that grinds a surface to a desired profile, imparts a desired roughness to that surface, and removes contamination from the surface, the machine configured to control multiple independent input variables simultaneously, the controllable variables selected from the group consisting of (i) velocity, (ii) rotation, and (iii) dither of the treatment tool, and (iv) pressure of the treatment tool against the surface. The machine can move the treatment tool with six degrees of freedom.

A machine featuring a treatment tool that grinds a surface to a desired profile, imparts a desired roughness to that surface, and removes contamination from the surface, the machine configured to control multiple independent input variables simultaneously, the controllable variables selected from the group consisting of (i) velocity, (ii) rotation, and (iii) dither of the treatment tool, and (iv) pressure of the treatment tool against the surface. The machine can move the treatment tool with six degrees of freedom.