There is provided a grinding apparatus including a chuck table configured to hold a workpiece, a grinding unit configured to grind the workpiece held by the chuck table by grinding stones fixed to a grinding wheel, a grinding feed mechanism configured to raise or lower the grinding unit, a reading unit configured to read a thickness of a base which thickness is recorded on a recording medium on which the thickness of the base of the grinding wheel is recorded, a base thickness storage section configured to store the thickness of the base which thickness is read by the reading unit, and a detecting unit configured to make the grinding unit perform processing by the grinding feed mechanism, and detect a fitting surface of a mount and the lower surface of a grinding stone of the grinding wheel fitted to the mount.

A substrate processing method of thinning a substrate having a protective tape attached on a front surface thereof includes measuring a thickness of the protective tape; and grinding, by using a grinder, a rear surface of the substrate held by a substrate holder.

A substrate processing method of thinning a substrate having a protective tape attached on a front surface thereof includes measuring a thickness of the protective tape; and grinding, by using a grinder, a rear surface of the substrate held by a substrate holder.

A grinding apparatus includes a first chuck table that has a porous holding surface corresponding to a first wafer and holds the first wafer, a second chuck table that has a porous holding surface corresponding to a second wafer different from the first wafer in size or shape and holds the second wafer, and a grinding unit that grinds, by a grinding wheel, the first wafer sucked and held by the first chuck table positioned at the grinding position or the second wafer sucked and held by the second chuck table positioned at the grinding position.

A grinding apparatus includes a first chuck table that has a porous holding surface corresponding to a first wafer and holds the first wafer, a second chuck table that has a porous holding surface corresponding to a second wafer different from the first wafer in size or shape and holds the second wafer, and a grinding unit that grinds, by a grinding wheel, the first wafer sucked and held by the first chuck table positioned at the grinding position or the second wafer sucked and held by the second chuck table positioned at the grinding position.

In a substrate polishing apparatus where a polishing liquid passes through inside a rotary joint, the rotary joint requires maintenance. There is provided a substrate polishing apparatus that includes: a polishing head for holding a substrate; a rotary table that has a surface to which a first opening portion is provided; a polishing liquid discharge mechanism disposed to the rotary table; and a controller configured to control at least the polishing liquid discharge mechanism. The polishing liquid discharge mechanism includes a first cylinder, a first piston, and a driving mechanism that drives the first piston. The first opening portion is communicated with a liquid holding space defined by the first cylinder and the first piston. The controller controls the driving of the first piston by the driving mechanism to increase and decrease a volume of the liquid holding space.

A manufacturing method of a wafer includes a first and a second resin-application grinding step, and a third surface-grinding step. The first step includes: a first formation step of forming a first coating layer; a first surface-grinding step of placing the wafer so that the first coating layer contacts a reference surface of a table and surface-grinding a first surface of the wafer; and a first removal step of removing the first coating layer. The second step includes: a second formation step of forming a second coating layer; a second surface-grinding step of placing the wafer so that the second coating layer contacts the reference surface and surface-grinding the second surface; and a second removal step of removing the second coating layer. In the third step, the wafer is placed so that the last surface-ground surface contacts the reference surface and a surface opposite the contacted surface is surface-ground.

A manufacturing method of a wafer includes a first and a second resin-application grinding step, and a third surface-grinding step. The first step includes: a first formation step of forming a first coating layer; a first surface-grinding step of placing the wafer so that the first coating layer contacts a reference surface of a table and surface-grinding a first surface of the wafer; and a first removal step of removing the first coating layer. The second step includes: a second formation step of forming a second coating layer; a second surface-grinding step of placing the wafer so that the second coating layer contacts the reference surface and surface-grinding the second surface; and a second removal step of removing the second coating layer. In the third step, the wafer is placed so that the last surface-ground surface contacts the reference surface and a surface opposite the contacted surface is surface-ground.

A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.