A sputtering target that is less likely to cause abnormal discharge is manufactured. A method for manufacturing a sputtering target includes performing multi-stage polishing on a sputtering surface of a target material having a Vickers hardness of 100 or less being made of metal by using a plurality of abrasives having different grit numbers in ascending order of grit number from a small grit number to a large grit number.

Systems remotely polish and compress surfaces for working, including surfaces created through electrical discharge machining. A bridge may secure about the surface and carry a spindle that rotatably extends downward and carries a polishing assembly. The polishing assembly can push against the surface while polishing the same with larger amounts of force. The polisher can be moved about a perimeter of the surface and vertically. Systems may be remotely operated with a pneumatic slide, hydraulic motor, and/or stepper motor. Spotfaces formed from electrical discharge machining, including those in nuclear facilities and deep underwater, may have recast layers removed with such systems without manual or direct operator interface.

Systems remotely polish and compress surfaces for working, including surfaces created through electrical discharge machining. A bridge may secure about the surface and carry a spindle that rotatably extends downward and carries a polishing assembly. The polishing assembly can push against the surface while polishing the same with larger amounts of force. The polisher can be moved about a perimeter of the surface and vertically. Systems may be remotely operated with a pneumatic slide, hydraulic motor, and/or stepper motor. Spotfaces formed from electrical discharge machining, including those in nuclear facilities and deep underwater, may have recast layers removed with such systems without manual or direct operator interface.

In a substrate cleaning device, with a polishing head in contact with one surface of a substrate rotated by a spin chuck, the polishing head is moved at least between a center and an outer periphery of the substrate. Thus, the one surface of the substrate is polished by the polishing head, and contaminants present on the one surface of the substrate are removed. At this time, capacity for removing contaminants by the polishing head is changed according to a position in a radial direction of the substrate. The capacity for removing contaminants refers to capacity for scraping contaminants adhering to the one surface of the substrate, and suction marks, contact marks and the like remaining on the one surface of the substrate by polishing. It is possible to change the capacity for removing contaminants by adjusting a pushing force exerted on the one surface of the substrate from the polishing head, for example.

In a substrate cleaning device, with a polishing head in contact with one surface of a substrate rotated by a spin chuck, the polishing head is moved at least between a center and an outer periphery of the substrate. Thus, the one surface of the substrate is polished by the polishing head, and contaminants present on the one surface of the substrate are removed. At this time, capacity for removing contaminants by the polishing head is changed according to a position in a radial direction of the substrate. The capacity for removing contaminants refers to capacity for scraping contaminants adhering to the one surface of the substrate, and suction marks, contact marks and the like remaining on the one surface of the substrate by polishing. It is possible to change the capacity for removing contaminants by adjusting a pushing force exerted on the one surface of the substrate from the polishing head, for example.

A polishing device includes shape following sections opposing a workpiece with a polishing body interposed between the shape following sections and the workpiece, and each including a displaceable shaft section. At least two of the shaft sections adjacent to each other are coupled via a link member. For example, when one of the shaft sections of the shape following sections coupled via the link member retracts by receiving a reaction force from the workpiece, the other of the shaft sections advances.

A polishing device includes shape following sections opposing a workpiece with a polishing body interposed between the shape following sections and the workpiece, and each including a displaceable shaft section. At least two of the shaft sections adjacent to each other are coupled via a link member. For example, when one of the shaft sections of the shape following sections coupled via the link member retracts by receiving a reaction force from the workpiece, the other of the shaft sections advances.

The cutter holder capable of polishing a workpiece has a body, a mandrel, a middle element and a brush assembly. The mandrel extends into the body. The middle element is mounted to the body with a part of the mandrel extending out of the middle element. The brush assembly is mounted with the part of the mandrel that extends out of the middle element.

The cutter holder capable of polishing a workpiece has a body, a mandrel, a middle element and a brush assembly. The mandrel extends into the body. The middle element is mounted to the body with a part of the mandrel extending out of the middle element. The brush assembly is mounted with the part of the mandrel that extends out of the middle element.

A rotating substrate is cleaned by a polishing head and a cleaning brush. A first trajectory is formed by movement of the polishing head along a first path. A second trajectory is formed by movement of the cleaning brush along a second path. A region in which the first and second paths overlap with each other is defined as an interference region. The polishing head moves from a center towards an outer peripheral end of the substrate, and it is determined whether the polishing head has moved out of the interference region. At a time point at which it is determined that the polishing head has moved out of the interference region, the cleaning brush starts moving from the outer peripheral end towards the center of the substrate.