A method for roughening a cylinder bore wall to be coated of a component, at least one groove, running around the central longitudinal axis, and at least one associated groove web, are generated such that the at least one groove web, in a radial direction directed toward the central longitudinal axis, forms first undercuts for a coating which is to be applied. Axial grooves running in the cylinder bore wall transversely to the at least one groove are generated such that the at least one groove web, in a peripheral direction about the central longitudinal axis, forms respective second undercuts for the coating which is to be applied. An adhesion of the coating which is to be applied, in the peripheral direction, is improved, so that stress cracks or detachments owing to a different thermal expansion of the component and of the coating which is to be applied are avoided.

A method for roughening a cylinder bore wall to be coated of a component, at least one groove, running around the central longitudinal axis, and at least one associated groove web, are generated such that the at least one groove web, in a radial direction directed toward the central longitudinal axis, forms first undercuts for a coating which is to be applied. Axial grooves running in the cylinder bore wall transversely to the at least one groove are generated such that the at least one groove web, in a peripheral direction about the central longitudinal axis, forms respective second undercuts for the coating which is to be applied. An adhesion of the coating which is to be applied, in the peripheral direction, is improved, so that stress cracks or detachments owing to a different thermal expansion of the component and of the coating which is to be applied are avoided.

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 μin.

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 μin.

A portable cutting machine is provided. The portable cutting machine comprises: a cutting portion including a disc-shaped cutting blade that cuts an object to be cut by rotating, and a first rotation axis that serves as a rotation center of the cutting blade; a drive portion including a drive source and a second rotation axis rotating by drive of the drive source; a transmission portion including a first pulley fixed to the first rotation axis, a second pulley fixed to the second rotation axis, and a belt looped around the first pulley and the second pulley, and configured to transmit a rotational force by the drive portion to the cutting portion; and a case including a storage space for storing the transmission portion and at least one communication portion that connect to the storage space and open to outside.

A cylinder liner of the present invention is a cylinder liner mounted on a cylinder block and formed of flaky graphite cast iron, at least a nitrided layer is provided on an inner periphery of the cylinder liner, and a cross hatching section is formed on the inner periphery, a roughness curve of the inner periphery has a plateau honing shape, a ten-point average roughness Rz of the inner periphery pursuant to JIS B0601:1982 is 4.0 μm or less, and an average value of an area ratio of pits generated in the inner periphery is 8% or less.

A cylinder liner of the present invention is a cylinder liner mounted on a cylinder block and formed of flaky graphite cast iron, at least a nitrided layer is provided on an inner periphery of the cylinder liner, and a cross hatching section is formed on the inner periphery, a roughness curve of the inner periphery has a plateau honing shape, a ten-point average roughness Rz of the inner periphery pursuant to JIS B0601:1982 is 4.0 μm or less, and an average value of an area ratio of pits generated in the inner periphery is 8% or less.

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 .Math.in.

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 .Math.in.

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 μin.