There is provided a detection signal processing circuit and a detection signal processing method for an eddy current sensor that are less easily influenced by a change in ambient environment than conventional technologies. A detection signal processing apparatus includes a converter configured to convert a first analog signal output by a detection coil into a first digital signal, a converter configured to convert a second analog signal output by a dummy coil into a second digital signal, and a detector which is a digital signal processing circuit configured to detect the first digital signal and the second digital signal.

The present invention relates to a device for polishing a specimen (104, 204). The device comprises a polishing platen (101, 201) rotatable about an axis, a polishing pad (103, 203) attached to the polishing platen (101, 201), a specimen holder (105, 205) for holding the specimen (104, 204) against the polishing pad (103, 203), means (107, 110, 207, 212) for measuring a physical quantity in a plurality of positions on the polishing pad (103, 203), the physical quantity being indicative of the moisture or the friction, and means (116, 119, 120, 121, 213, 215, 216, 217) for dispensing a polishing suspension, based on values of the measured physical quantity, to the plurality of positions on the polishing pad (103, 203). The invention also relates to a method for polishing a specimen (104, 204).

The present invention relates to a device for polishing a specimen (104, 204). The device comprises a polishing platen (101, 201) rotatable about an axis, a polishing pad (103, 203) attached to the polishing platen (101, 201), a specimen holder (105, 205) for holding the specimen (104, 204) against the polishing pad (103, 203), means (107, 110, 207, 212) for measuring a physical quantity in a plurality of positions on the polishing pad (103, 203), the physical quantity being indicative of the moisture or the friction, and means (116, 119, 120, 121, 213, 215, 216, 217) for dispensing a polishing suspension, based on values of the measured physical quantity, to the plurality of positions on the polishing pad (103, 203). The invention also relates to a method for polishing a specimen (104, 204).

Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.

Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.

A moisture sensor (100) that comprises a contact surface (105) for contacting a polishing pad (503), and a first, a second and a third electrical contact element (101, 102, 103) electrically isolated from each other, the electrical contact elements (101, 102, 103) being disposed within the moisture sensor (100) so that they are exposed at the contact surface (105). Also a polishing device and a method for measuring the moisture in a polishing pad (503) is disclosed using the moisture sensor (100).

A method and apparatus for determining a polishing pad thickness profile are described herein. A set of displacement sensors, including an arm displacement sensor and one or more conditioning disk displacement sensors are utilized to determine the orientation of a conditioning disk and the thickness of the polishing pad. The displacement sensors are non-contact sensors, such as a laser sensor, a capacitive sensor, or an inductive sensor. Once the thickness profile of the polishing pad is determined, one or more process conditions is altered to improve substrate polishing.

A method and apparatus for determining a polishing pad thickness profile are described herein. A set of displacement sensors, including an arm displacement sensor and one or more conditioning disk displacement sensors are utilized to determine the orientation of a conditioning disk and the thickness of the polishing pad. The displacement sensors are non-contact sensors, such as a laser sensor, a capacitive sensor, or an inductive sensor. Once the thickness profile of the polishing pad is determined, one or more process conditions is altered to improve substrate polishing.

Wafers that begin as flat surfaces during a semiconductor manufacturing process may become warped or bowed as layers and features are added to an underlying substrate. This warpage may be detected between manufacturing processes by rotating the wafer adjacent to a displacement sensor. The displacement sensor may generate displacement data relative to a baseline measurement to identify areas of the wafer that bow up or down. The displacement data may then be mapped to locations on the wafer relative to an alignment feature. This mapping may then be used to adjust parameters in subsequent semiconductor processes, including adjusting how a carrier head on a polishing process holds or applies pressure to the wafer as it is polished.

Wafers that begin as flat surfaces during a semiconductor manufacturing process may become warped or bowed as layers and features are added to an underlying substrate. This warpage may be detected between manufacturing processes by rotating the wafer adjacent to a displacement sensor. The displacement sensor may generate displacement data relative to a baseline measurement to identify areas of the wafer that bow up or down. The displacement data may then be mapped to locations on the wafer relative to an alignment feature. This mapping may then be used to adjust parameters in subsequent semiconductor processes, including adjusting how a carrier head on a polishing process holds or applies pressure to the wafer as it is polished.