A polishing pad useful in chemical mechanical polishing comprises a base pad having a top side, and a plurality of protruding structures on the top side of the base pad, each of the protruding structures having a body, where the body has (i) an exterior perimeter surface defining an exterior shape of the protruding structure, (ii) an interior surface defining a central cavity and (iii) a top surface defining an initial polishing surface area, wherein the body further has openings in it from the cavity to the exterior perimeter surface.

A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

Embodiments of the present disclosure relate a CMP tool and methods for planarization a substrate. Particularly, embodiments of the present disclosure provide a substrate transporter for use in a CMP tool. The transporter may be used transport and/or carry substrates among various polishers and cleaners in a CMP tool while preventing the substrates from drying out during transportation. By keeping surfaces of the substrates wet during substrate waiting time or idle time in the CMP tool, embodiments of the present disclosure prevent many types of defects, such as byproducts, agglomerated abrasives, pad debris, slurry residues, from accumulate on the substrate surface during CMP processing, thus improve yields and device performance.

A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

Lapping tools are provided that include at least one angled feature that forms at least one surface angle with the lapping surface. In some examples, angled features may include a first surface angle and a second surface angle. Each surface angle of the angled feature is configured to retain abrasive grit and provide a desired type of finish.

Lapping tools are provided that include at least one angled feature that forms at least one surface angle with the lapping surface. In some examples, angled features may include a first surface angle and a second surface angle. Each surface angle of the angled feature is configured to retain abrasive grit and provide a desired type of finish.

A method and a system for polishing a wafer is disclosed. In one aspect, the method includes generating atmospheric plasma. The method further includes treating a component of a wafer processing system with the atmospheric plasma. The method further includes delivering a slurry containing abrasive and corrosive particles to a surface of the wafer processing system which includes atmospheric plasma-treated component. The method further includes polishing a wafer with the abrasive and corrosive particles.

Embodiments of the present disclosure generally relate to methods of manufacturing polishing platens for use on a chemical mechanical polishing (CMP) system and polishing platens formed therefrom. A method of manufacturing a polishing includes positioning a polishing platen on a support of a manufacturing system. The manufacturing system includes the support and a cutting tool facing there towards. Here, the polishing platen includes a cylindrical metal body having a polymer layer disposed on a surface thereof and the polymer layer has a thickness of about 100 m or more. The method further includes removing at least a portion of the polymer layer using the cutting tool to form a polishing pad-mounting surface. Beneficially, the method may be used to form a pad-mounting surface having a desired flatness or shape, such as a concave or convex shape.

A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.